PHDIP28 Search Results

Contextual Info: f Z J ^7# S C S -T H O M S O N M K 4 8 Z 0 8 ,1 8 M K 4 8 Z 0 9 ,1 9 CMOS 8K x 8 ZEROPOW ER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. ■ PREDICTED WORST CASE BATTERY LIFE OF

MK48Z30

Contextual Info: S5E D • 7 ^ 2 3 7 003fl3flb T13 ■ SGS-THOMSON SGTH T - ^ - 2 L 3 “ / J MK48Z3Ö MK48Z30Y S G S- THOMSON CMOS 32K x 8 ZEROPOWER SRAM ■ INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE

Contextual Info: SCS-THOMSON MKI48Z18 CMOS 8K x 8 ZEROPOWER SRAM ADVANCE DATA • INDUSTRIAL TEMPERATURE RANGE -40‘C TO +85"C ■ INTEGRATED LOW POWER SRAM, POWERFAIL C O N TR O L C IR C U IT AND ENERGY SOURCE ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE

Contextual Info: 55E /T T *7 # . P • 7 ^ 5 3 7 0036365 S C S -1 H O M S O N * [l» [i g « M (g § 376 s 6 ■S6TH T -H é -¿ 3 - / s - thomson M K I4 8 Z 1 8 CMOS 8K x 8 ZEROPOWER SRAM ADVANCE DATA ■ INDUSTRIAL TEMPERATURE RANGE -40‘C TO +85"C ■ INTEGRATED LOW POWER SRAM, POWERFAIL CO NTRO L C IR C U IT AND ENERGY

MK48Z08 equivalent

Abstract: MK48Z09 MK48Z08 MK48Z18 PHDIP thomson tv circuit diagram
Contextual Info: 52E S G » • □□3Ô37G S - T H O M S O « e r a bSb ■ S G T H T - V ^ - 2 3 - |2_ N M K 4 8 Z 0 8 .1 8 « M K 4 8 Z 0 9 ,1 9 S G S - TH OH SO N CMOS 8K x 8 ZEROPOWER SRAM ■ INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­

MK48T08

Abstract: MK48T18 tle 8760 mk48T08b10
Contextual Info: r z j S C S -T H O M S O N ^7# iSD ^@ILŒCTl@iD gi MK48T08 MK48T18 CMOS 8K x 8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, CRYSTAL, POWER-FAIL CONTROL CIRCUIT AND BATTERY. ■ BYTEWIDE RAM-LIKE CLOCK ACCESS. ■ BCD CODED YEAR, MONTH, DAY, DATE,

Contextual Info: r z 7 SCS-THOMSON ^ 7# MK48Z32 MK48Z32Y CMOS 32K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. ■ MINIMUM BATTERY BACK-UP OF 10 YEARS

256x16 eprom

Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
Contextual Info: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1

8925m

Contextual Info: fZ T S G S -T H O M S O N “ 7# M K48Z32 M K48Z32Y CMOS 32K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. ■ MINIMUM BATTERY BACK-UP OF 10 YEARS

Contextual Info: SEE T> m 7l12c1237 DD36MD0 113 «SGTH SGS-THOMSON ¡5 MK48Z32 MK48Z32Y 6 S-THOflSON CMOS 32K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE

MKI48Z18

Abstract: PHDIP
Contextual Info: ¿Z J SGS-THOMSON MKI48Z18 CMOS 8K x 8 ZEROPOWER SRAM ADVANCE DATA • INDUSTRIAL TEM PERATURE RANGE -40°C TO +85‘ C ■ INTEGRATED LOW POWER SRAM, POWERF A IL C O N T R O L C IR C U IT A N D E N E R G Y SOURCE ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS W RITE-CYCLE

MKI48Z18

Contextual Info: Æ 7 SGS-THOMSON MKI48Z18 ^ 7# l* ® S iLi(M (ô)K i(g S CMOS 8K x 8 ZEROPOWER SRAM ADVANCE DATA • INDUSTRIAL TEMPERATURE RANGE -40’C TO +85"C ■ INTEGRATED LOW POWER SRAM, POWERFAIL C O N TR O L C IR C U IT AND ENERGY SOURCE ■ UNLIMITED WRITE-CYCLES.

stm 8322

Abstract: 48Z08 MK48Z09
Contextual Info: r z 7 S G S -T H O M S O N *> 7 M G W T O ilL I^ G M D ! M K 4 8 Z 0 8 ,1 8 M K 4 8 Z 0 9 ,1 9 CMOS 8K x 8 ZEROPOW ER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE

Contextual Info: S2E 1> £ Z 7 ^ 7 # • 7 S 2 CÌ2 3 7 OOBflSlfl 23M ■ S 6 T H T - V £ - Z 3 - / 2 _ S G S -T H O M S O N 5 M K 4 8 T 0 8 J L i T m ® « t _ M K 4 8 T 1 8 S G S-TH0I1S0N CMOS 8K x 8 TIMEKEEPER SRAM ■ INTEGRATED ULTRA LOW POWER SRAM,

MK48T18

Contextual Info: / I T ^7# S C S - T H O M S O M K48T08 M K48T18 N KsiieB®iiiLi STn3®Hoei CMOS 8K x 8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, CRYSTAL, POWER-FAIL CONTROL CIRCUIT AND BATTERY. ■ BYTEWIDE RAM-LIKE CLOCK ACCESS. ■ BCD CODED YEAR, MONTH, DAY, DATE,

Contextual Info: MK48Z30 MK48Z30Y SGS-THOMSON mo CMOS 32K x 8 ZEROPOWER SRAM • INTEGRATED ULTtiA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. ■ MINIMUM BATTERY BACK-UP OF 10 YEARS @ 25’C.

MK48T87B24

Abstract: ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR
Contextual Info: •y , . r i'. " - L. - S .• u _ NON VOLATILE MÉMBMES CMOS UV EPROM and OTP ROM Size 64K 256K Part N umber O rganisation Ucc ns Vcc Range Icc ! Stby Tem perature Range (°C) Package M27C64A-15F1 8K X 8 150 5V ± 10% 30mA / 1 00nA Oto 70 FDIP28W