2SK2737 Search Results

Hitachi DSA00276

Contextual Info: 2SK2737 Silicon N Channel MOS FET High Speed Power Switching ADE-208-533B Z 3rd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 10 mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 S 3 1. Gate 2. Drain

2SK2737

Abstract: Hitachi DSA00238
Contextual Info: 2SK2737 Silicon N Channel MOS FET High Speed Power Switching ADE-208-533B Z 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 10 mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 S 3 1. Gate 2. Drain 3. Source

Hitachi DSA002749

Contextual Info: 2SK2737 Silicon N Channel MOS FET High Speed Power Switching ADE-208-533B Z 3rd. Edition June 1, 1998 Features • Low on-resistance R DS(on) = 10 mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 S 3 1. Gate 2. Drain

Contextual Info: 2SK2737 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-533B Z 3rd. Edition June 1, 1998 Features • Low on-resistance • R ds(o„) = 10 m il typ. 4V gate drive devices. • High speed switching Outline 2SK2737 Absolute Maximum Ratings (Ta = 25 °C)

2SK2737

Abstract: 2SK2737-E PRSS0003AE-A
Contextual Info: 2SK2737 Silicon N Channel MOS FET High Speed Power Switching REJ03G1031-0400 Previous: ADE-208-533B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0003AE-A

Contextual Info: 2SK2737 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-533 1st. Edition Features Low on-resistance Rosion = 10 m i2 typ. Low drive current High speed switching Outline T O -2 2 Q C F M 1. G ate 2. Drain 3. Source 1089 2SK2737 Absolute Maximum Ratings Ta = 25°C)

2SK2737

Abstract: 2SK2885 Hitachi DSA0044
Contextual Info: 2SK2885 L , 2SK2885(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-545A (Z) 2nd. Edition Sep. 1997 Features • Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 4 D 1 1 G S 2 3 2

2SK3235

Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Contextual Info: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

TO220CFM

Abstract: 2SK2554 TO-220CFM to-3p(i)d series HAT1020R HAT1021R HAT1023R HAT1024R HAT1026R HAT2016R
Contextual Info: Power Mosfet 5th Generation The Performance Revolution Literature Order Number Revision Number 5/14/97 Hitachi Europe, Ltd. European Marketing Power Mosfet 5th Generation - The Performance Revolution 1.1 RDS ON 4.5m Ohm - A new standard has been set With the introduction of the new D5-Series HITACHI started a new age of RDS (ON)

Hitachi DSA002758

Contextual Info: 2SK2885 L , 2SK2885(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-545 A 2nd. Edition Features • Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline 2SK2885(L), 2SK2885(S) Absolute Maximum Ratings (Ta = 25°C)

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

lvc16244

Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Contextual Info: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List

hitachi j50

Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK2225 equivalent

Abstract: 2SK1762 equivalent 2sk2221 equivalent C2373 2SK215 equivalent 2SJ182 equivalent 2SK1317 equivalent 2SK1336 equivalent 2SK975 equivalent 2sk1058 equivalent
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 Recommended products in each power range Recommended Products in Each Power Range Type power supply Voltage Up to 10 w 10 W to 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 100 V to 132 V AC □ 2SK1151 {3.5}

2SK2737

Abstract: 2SK2737-E PRSS0003AE-A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5

hitachi mosfet audio

Abstract: D4L DIODE 2SK2830 2SK2225 2SJ214LS 2SK1919LS 2sk2829 Hitachi MOSFET 2SK1058 transistors 2SK1317
Contextual Info: Power MOSFET Quick Reference Literature Order Number Revision Number Hitachi Semiconductor Author Name When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole