2SK243 Search Results

2sk1153

Abstract: dc-dc converter hitachi HITACHI DIODE 2SK1862 2SK2431 Hitachi DSA00396 HITACHI 2SK* TO-3
Contextual Info: 2SK2431 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM D 12

2SK1885

Abstract: 2SK2437 2SK2438
Contextual Info: 0 ID Series Lineup VDSS = 30V, N-channel Absolute maximum ratings atT a= 25°C Typelto. Package Voss V 2SK1847 (V) CP 2SK1467 2SK1724 VGSS ±15 •o (A) m 0.5 0.25* 2.0 1.0 PCP 2SK2437 i2 0 2SK1468 P d* VGS(off) min to max (V) 1.0 to 2.0 3.5 2.0 4.0 Electrical characteristics atTa = 25°C

2SK243-2

Abstract: 2SK2432 2sk1470
Contextual Info: • LD Series Lineup VDSS = 60V, N-channel Absolute maximum ratings atTa = 25°C Type No. Package VfiSS VG8S *D A 2SK1470 CP 0.4 2.0 PCP +15 TP 2SK1472 2SK2432 ZP 0.9/1.2 0.4 45 0.45/0.6 0.35/0.45 2.0 150 1.2/1.6 0.9/1.2 1.0 45 30 0.08/0.11 0.06/0.08 8.0

Hitachi DSA002780

Contextual Info: 2SK2431 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM D 12

2SK2433

Abstract: ITR02136 ITR02137 ITR02138 ITR02139 ITR02140 ITR02141 ITR02142
Contextual Info: 2SK2433 注文コード No. N 8 3 5 3 2SK2433 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・低電圧駆動。 ・面実装に対応し工数低減およびセットの高密度 , 小型化が可能となる。

Hitachi DSA00279

Contextual Info: 2SK2431 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline 2SK2431 Absolute Maximum Ratings Ta = 25°C

2SK2433

Abstract: ITR02136 ITR02137 ITR02138 ITR02139 ITR02140 ITR02141 ITR02142
Contextual Info: 2SK2433 Ordering number : ENN8353 2SK2433 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Low-voltage drive. Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface

k1153

Contextual Info: 2SK2431 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • Lo w on-resistance • High speed switching • Lo w drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter. Outline 1. Gate

2SK2431

Abstract: Hitachi DSA001651
Contextual Info: 2SK2431 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM

Contextual Info: 2SK2431 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter. Outline

2SK2431

Abstract: 2SK1153 2SK1862
Contextual Info: 2SK2431 Silicon N Channel MOS FET Application TO–220CFM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC – DC converter 2 12 1

Hitachi DSA00276

Contextual Info: 2SK2431 Silicon N-Channel MOS FET ADE-208-1362 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter.

2SK2434

Contextual Info: 2SK2434 Ordering number : EN8606 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2434 General-Purpose Switching Device Applications Features • • • Low ON-resistance. High-speed switching. 10V drive. Specifications Absolute Maximum Ratings at Ta=25°C

2SK2632

Abstract: 2SK2636 TS9938 2SK2436 2SK2634
Contextual Info: • AP Series Lineup New H-lll Series VDSS = 800V, N- channel Absolute maximum ratings atTa =25°C Type No. Package Vtm m 2SK2631 TP 2SK2632 TO-220FI TS9928 TO-220FI A ^DS(on) typ/max at V«*=15V Cita Crss typ (PF) Qg typ <nC) (300) (45) (8) 3.6/4.8 550

2SK245

Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H

on line ups circuit diagrams

Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Contextual Info: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm

TN6Q04

Abstract: 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584
Contextual Info: SANYO Power Transistors Bipolar Transistor Series & Schottky Barrier Diode Series CONTENTS 2ĝ5 ŝTO-220MF Package 6 ŝTO-220FI Package ŝLow-saturation Voltage Transistors 7 ŝTO-220FI5H Package 14 ŝHorizontal Deflection Output Use 8 ŝTO-220ML Package 15

2SK3235

Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Contextual Info: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting

2SK3099

Abstract: 2SK2434 2SK2617 2SJ522 2SK3092 2SK3093 2SK3094 2SK3095 2SK3096 2SK3097
Contextual Info: SAfiYO L a r g e - s i g n a l Power M0SFETs 4 The Sanyo J-MOS s e r i e s u t i l i z e s Sanyo’ s own f in e f a b r ic a t io n process fo r power d evices to develop an e n tir e s e r ie s of u ltr a h ig h perform ance power d e v ic e s cap ab le o f high v o lta g e , high speed and larg e cu rren t operation.

2SK2747

Abstract: 2SK2748 2SJ403 2SK536 2SK1467 2SJ254 2SJ255 2SJ256 2SJ263 2SJ264
Contextual Info: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta » 251C RDS(on)@ID ' VGS W Voss (V) ID (A) PD (W) Teh 0« V 6^*> RDS(on) max(Q) to |Yf»| VDS • M> (A) Vgs (V) VDS 00 to (A) 2SJ282

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)