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    2SK210 Search Results

    2SK210 Datasheets (56)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SK210
    		Toshiba N-Channel MOSFET Original PDF 368.03KB 6
    2SK210
    		Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 101.94KB 1
    2SK210
    		Unknown High Frequency Device Data Book (Japanese) Scan PDF 50.25KB 1
    2SK210
    		Unknown FET Data Book Scan PDF 98.04KB 2
    2SK210
    		Unknown Scan PDF 222.86KB 5
    2SK210
    		Toshiba Field Effect Transistor Silicon N Channel Junction Type Scan PDF 2.77MB 5
    2SK210
    		Toshiba SILICON N CHANNEL MOS TYPE, FIELD EFFECT TRANSISTO Scan PDF 253.38KB 6
    2SK210
    		Toshiba Silicon N channel field effect transistor for FM tuner applications and VHF band amplifier applications Scan PDF 253.56KB 6
    2SK210
    		Toshiba Junction FETs / MOSFET / Transistors Scan PDF 69.05KB 1
    2SK2100-01MR
    		Fuji Electric Power MOSFET Scan PDF 161.96KB 11
    2SK2101-01MR
    		Fuji Electric N-channel MOS-FET Original PDF 172.58KB 2
    2SK2101-01MR
    		Fuji Electric N-channel MOS-FET Original PDF 175.38KB 2
    2SK2102
    		ROHM Silicon N-Channel MOSFET Scan PDF 128.49KB 2
    2SK2103
    		ROHM Small switching (30V, 2A) Original PDF 128.54KB 4
    2SK2103
    		ROHM Power MOSFETs Scan PDF 82.17KB 1
    2SK2103T100
    		ROHM TRANS MOSFET N-CH 30V 2A 3SC-62 T/R Original PDF 137.71KB 5
    2SK2103T100
    		ROHM Small Switching (30 V, 2 A) Original PDF 128.54KB 4
    2SK2104
    		ROHM Power MOSFET Scan PDF 169.35KB 2
    2SK2104
    		ROHM Power MOSFET Scan PDF 85.59KB 2
    2SK2104
    		ROHM Silicon N-Channel MOS FET Scan PDF 136.89KB 2
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    2SK210 Price and Stock

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    Renesas Electronics Corporation 2SK2109-T1-AZ

    N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK2109-T1-AZ 6,956 944
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.40
    • 10000 $0.33
    		Buy Now
    Rochester Electronics 2SK2109-T1-AZ 6,956 1
    • 1 -
    • 10 -
    • 100 $0.35
    • 1000 $0.29
    • 10000 $0.26
    		Buy Now

    ROHM Semiconductor 2SK2103T100

    2000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK2103T100 2,892
    • 1 $0.94
    • 10 $0.94
    • 100 $0.94
    • 1000 $0.38
    • 10000 $0.33
    		Buy Now
    ComSIT USA 2SK2103T100 2,030
    • 1 -
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    ROHM Semiconductor 2SK2103

    SMALL SWITCHING (30V, 2A) TRANSISTOR Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA 2SK2103 5,400
    • 1 -
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    2SK210 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DSA007622

    Contextual Info: 2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • High power gain: GPS = 24dB typ. (f = 100 MHz) • Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) • High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)


    Original     		2sk210sc-59dsa007622 PDF

    2SK210

    Contextual Info: SILICON N CHANNEL JUNCTION TYPE 2SK210 U nit in mm FM TUNER APPLICATIONS. VHF BAND AMPLIFIER APPLICATIONS. + Ü5 2 .5 -0 1 3 + Û2 5 1 .5 - t t 1 5 • High Power Gain : G ps = 24dB Typ. (f= 100MHz) • Low Noise Figure : N F= 1.8dB (Typ.) (f= 100MHz) •


    OCR Scan     		2sk210100mhzsc-59 PDF

    2SK2101-01MR

    Contextual Info: 2SK2101-01MR N-channel MOS-FET FAP-IIA Series 800V > Features - 2,1Ω 6A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		2sk2101-01mr PDF

    2SK210

    Abstract: marking ADMI
    Contextual Info: 2SK210 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK210 FM TUNER APPLICATIONS. VHF BAND AMPLIFIER APPLICATIONS. Unit in mm + 0 .5 2 .5 -0 .3 + 0 .2 5 1 .5 - Q l 5 • High Power Gain : Gpg = 24dB Typ. (f = 100MHz) • Low Noise Figure


    OCR Scan     		2sk210100mhzsc-59200i-----+1marking admi PDF

    2SK245

    Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
    Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H


    Original     		2sk2012sk2032sk2052sk208+142sk2092sk2102sk2112sk2122sk2132sk2142sk2452sk2702sk2432sk239a2sk2242sk259h2sk2262sk240 PDF

    2SK210

    Abstract: RS1N
    Contextual Info: 2SK210 TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK210 Unit in mm FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS • • • + 0.5 2 .5 -0.3 + 0.25 1.5-0.15 High Power Gain : Gpg = 24dB Typ. (f = 100MHz) Low Noise Figure


    OCR Scan     		2sk210100mhzsc-59rs1n PDF

    2SK210

    Contextual Info: 2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • High power gain: GPS = 24dB typ. (f = 100 MHz) • Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) • High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)


    Original     		2sk210sc-59 PDF

    2SK210

    Contextual Info: 2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • High power gain: GPS = 24dB typ. (f = 100 MHz) • Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) • High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)


    Original     		2sk210 PDF

    mosfet

    Abstract: parallel mosfet 2SK2103
    Contextual Info: Transistors Small switching 30V, 2A 2SK2103 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel


    Original     		2sk2103mosfetparallel mosfet PDF

    2SK210

    Abstract: 2SK2104 2SK2105
    Contextual Info: 2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • High power gain: GPS = 24dB typ. (f = 100 MHz) · Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) · High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)


    Original     		2sk2102sk21042sk2105 PDF

    2SK2109

    Abstract: 2SK210
    Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK2109 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 Features +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 RDS on =1.0 MAX.@VGS=4.0V,ID=0.3A +0.1 4.00-0.1 Low on-resistance High switching speed 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1


    Original     		2sk2109ot-892sk210 PDF

    jft 1411

    Abstract: c947 100 N31 transistor mur 641 M 9619 2SK2109 transistor 9619 nec 7824 ki 30 if 35acr
    Contextual Info: K ^ > V J* # MOS Field Effect Transistor 2SK2109 MOS FET 5 £ X < m m 2S K 2 1 0 9 & N 3 1 * *;U « É M O S F E T ? * U , 5 hiz J: 6 ¡t& ÏE S b jF n Jfë fc X < -y ^ > moL :mm ? m T ? to 1.5 ±0.1 <D77 ? ? j . J L - $ m W t f P , D C /D C = ] > / * - £ £ £ i : : j l i S ' ? f o


    OCR Scan     		2sk2109tc-7983a484sifejft 1411+7c947100 n31 transistormur 641m 9619transistor 9619nec 7824 ki 30 if35acr PDF

    2SK2101

    Abstract: 2SK2101-01MR
    Contextual Info: 2SK2101-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220F15 Applications 2.54


    Original     		2sk2101-01mro-220f15sc-672sk2101 PDF

    2SK2103

    Contextual Info: Transistors Small switching 30V, 2A 2SK2103 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel


    Original     		2sk2103 PDF

    2SK2108

    Contextual Info: Ordering number:ENN4602A N-Channel Silicon MOSFET 2SK2108 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A


    Original     		enn4602a2sk2108o-220ml PDF

    2SK210

    Contextual Info: 2SK210 TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK210 Unit in mm FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS • • • + 0.5 2 .5 -0.3 + 0.25 1.5-0.15 High Power Gain : Gpg = 24dB Typ. (f = 100MHz) Low Noise Figure


    OCR Scan     		2sk210100mhzsc-59 PDF

    2SK2102

    Contextual Info: TOSHIBA 2SK210 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K SILICON N CHANNEL JUNCTION TYPE 2 1 Q FM TUNER APPLICATIONS. VHF BAND AM PLIFIER APPLICATIONS. High Power Gain : GPs = 24dB Typ. (f=100M H z) • Low Noise Figure : NF = 1.8dB (Typ.) (f=lOOMHz) • High Forward Transfer Admitance :


    OCR Scan     		2sk2102sk2102 PDF

    2SK2108

    Contextual Info: Ordering number: EN4602A _ 2SK2108 NO.4602A N-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • M icaless package facilitating m ounting. A b s o lu te M ax im u m R a tin g s at Ta = 25°C


    OCR Scan     		en4602a2sk2108 PDF

    2SK210

    Contextual Info: 2SK210 TOSHIBA TO SHIBA FIELD EFFECT TRANSISTOR FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS SILICON N CHANN EL JUNCTION TYPE 2SK210 • H igh Power G ain : G p g = 24dB Typ. (f= 100M H z) • Low N oise Figure : N F = 1.8dB (Typ.) (f = 100MHz)


    OCR Scan     		2sk210100mhzsc-59unit25 PDF

    2SK2100

    Abstract: 600V 2A MOSFET N-channel 3,3
    Contextual Info: 2SK2100-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220F15 Applications 2.54


    Original     		2sk2100-01mro-220f15sc-672sk2100+1600v 2a mosfet n-channel 3,3 PDF

    2SK2101-01MR

    Contextual Info: 2SK2101-01MR N-channel MOS-FET FAP-IIA Series 800V > Features - 2,1Ω 6A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		2sk2101-01mr PDF

    2SK2109

    Abstract: C10535E MEI-1202
    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2109 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2109 is a N-channel MOS FET of a vertical type and PACKAGE DIMENSIONS in mm is a switching element that can be directly driven by the output of 4.5 ± 0.1 an IC operating at 5 V.


    Original     		2sk2109c10535emei-1202 PDF

    2SK210

    Contextual Info: 2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • High power gain: GPS = 24dB typ. (f = 100 MHz) • Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) • High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)


    Original     		2sk210 PDF

    2SK2103

    Contextual Info: 2SK2103 Silicon N-channel MOSFET Features Dimensions Units : mm available in MPT3 (MPT, SOT89, SC-62) package 2SK2103 (MPT3) ♦0.2 4 .5 _ o . i low on-resistance 1 .6 * 0 1 Ö ïî wide SOA (Safe Operating Area) 1 m fast switching speed ! ! «vi ! i ! '


    OCR Scan     		2sk2103sc-62 PDF