2SK217 Search Results

Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2177 N-Channel Enhancement type OUTLINE DIMENSIONS F1E50VX2 Case : E-pack (Unit : mm) 500V 1A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

2SK2171

Contextual Info: Ordering number:ENN4871 N-Channel Junction Silicon FET 2SK2171 High-Frequency, Low-Frequency Amplifier Analog Switch Applications Features Package Dimensions • Adoption of FBET process. · Large | yfs |. · Small Ciss. · High PD allowable power dissipation.

2SK245

Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H

2SK2175

Abstract: Hitachi DSA001652
Contextual Info: 2SK2175 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter

K2173

Abstract: K217 2SK2173
Contextual Info: 2SK2173 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2173 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) High forward transfer admittance

Contextual Info: 2SK2174 L , 2SK2174(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter Outline 2SK2174(L), 2SK2174(S)

2SK2261

Abstract: 2SK1973 2SK1974 2SK1975 2SK1976 2SK2094 2SK2095 2SK2104 2SK2176 2SK2262
Contextual Info: POWER MÜSFET Excellent switching capability with low on resistance, suitable for switching power supply or DC-DC converter. Taping products for use on an automatic insert machine are also available. Quick reference 'N / ceo [V] 60 450 500 2SK2176 T0-220FP

2SK2177

Abstract: F1E50VX2 F1E5
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2177 F1E50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case Case : E-pack E-pack (Unit : mm) 500V 1A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.

K2173

Abstract: 2SK2173
Contextual Info: 2SK2173 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2173 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) z High forward transfer admittance

2SK217

Contextual Info: 2SK217 Silicon N-Channel Junction FET HITACHI Application VHF amplifier Outline MPAK 4 P r, 2 1020 1. Gate 2. Drain 3. Source 2SK217 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Gate to drain current VGDO -3 0 V Drain current lD 20 mA Gate current

Contextual Info: HITACHI 2SK217 '*» r H A fíN e . J U .^ C f IC.JN « Î •r M j n , -t i m 0 i ' ÌM Û ■ • 5 t i 'Î '\ U = v . J . •/> * ? : $MPAK.I » A Û S O I U T Ë M A X IM U M f t A T t l t O S ^ n , - ^ > X iM U H C M A N N C L P O W G ft í.ü li

2SK2177

Contextual Info: Power MOSFET msmmm E-pack SMD TO-220 N-Channel, Enhancement type Absolute Maximum Ratings Electrical Characteristics (max) C«, (typ) (typ) t«, (typ) (typ) [pF] [pF] [ns] [ns] R d S(ON) Type No. Tch V dss Vgss Id Pt re ] [V ] [V ] [A ] [W ] [Q ] totf 2SK2177

Contextual Info: 2SK2179 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)30 I(D) Max. (A)3.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)9.0 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20# Minimum Operating Temp (øC)-55þ

Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2178 N-Channel Enhancement type OUTLINE DIMENSIONS F2E50VX2 Case : E-pack (Unit : mm) 500V 2A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

2SK217

Abstract: pbml NL JH
Contextual Info: HITACHI 2SK217 I-i c;> lAhKf-:. í jf.ii'Æ: f Vm F M jn L irir"i T T «I • 1 . . *> p4Ü I -.0- ! lit tliilü « . l» i • ■ 1 V .H o n I. C « Ï. fr: i ^“-'"iT 1 .1 -. j- i IA H S L U IE - H A X IIIU M Wa TIHÜS ■r. -.y, . Ib -n . C i n t i ’ .i

2SK2179

Abstract: F3E50VX2
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2179 F3E50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : E-pack (Unit : mm) 500V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

MM2124

Abstract: 2SK2170
Contextual Info: Ordering number:ENN4858 N-Channel Junction Silicon FET 2SK2170 Impedance Converter Applications Applications Package Dimensions • Low-frequency amplifier, analog switch, constant current source. unit:mm 2124 [2SK2170] · Ultrasmall-sized package permitting 2SK2170applied sets to be made small and slim.

ens100

Abstract: 71ra
Contextual Info: VX-DvU-X /ffeMOSFET V X -n SERIES P0 H 4 MOSFET O U T L IN E D IM E N S IO N S Case I E-pack 2SK2177 F 1 E 5 0 V X 2 6.6 ±0 2 2.55 - 0.2 500V 1A 0. 5 t 0 1 0.5 0 .6 * ° 2 U ± 0 .2 [Unit '•mm] k O i t o P12, 7 - l £ c * i i < £ S i > „ Lead type is available. S e e P. 12, 7-1

2SK2178

Abstract: F2E50VX2
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2178 F2E50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : E-pack (Unit : mm) 500V 2A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

Contextual Info: 2SK2173 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2173 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) z High forward transfer admittance

Contextual Info: RATINGS {=1 « EIAJ No. 2SK2177 2SK2178 2SK2179 2SK2180 2SK2181 2SK2182 2SK2183 2SK2184 2SK2185 2SK2186 2SK2187 2SK2188 2SK2189 2SK2190 2SK2191 2SK2192 2SK2193 2SK2194 2SK2195 2SK2196 2SK2197 2SK2198 Absolute Maximum Ratings Tch Vdss Vgss I d Pt DC Tc=25°C

2SK2171

Contextual Info: Ordering number:ENN4871 N-Channel Junction Silicon FET 2SK2171 High-Frequency, Low-Frequency Amplifier Analog Switch Applications Features Package Dimensions • Adoption of FBET process. · Large | yfs |. · Small Ciss. · High PD allowable power dissipation.

F3E50VX2

Abstract: MOSFET 500V 15A 2SK2179
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2179 F3E50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : E-pack (Unit : mm) 500V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

2SK2176

Abstract: k2176
Contextual Info: h7 > V 2SK2176 £ /Transistors 2S K 2176 '> • ;= ]> N MOS Silicon N-channel MOSFET > ^/Switching • ^fJKvl'jiEI/Dimenslons U nit: mm « * 1) 2) S i Ü X ' f ■ ;= } - > '? 7 , f ~ K„ 3) E l ' SOAo 4) fr - V • v -x « E o V g ss = ± 3 0 V < *E E