750MM2X Search Results

Contextual Info: Ordering number: EN 4877 FX501 No.4877 I P N P Epitaxial P lan a r Silicon Transistor SA%YOi High-Current Switching Applications F eatures • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. • The FX501 houses two chips, each being equivalent to the 2SB1205, in one package.

SD marking

Contextual Info: Ordering number : EN 4888 _ FX605 No.4888 P-Channel Silicon MOSFET SA0YO I 1 ^— L Ultrahigh-Speed Switching Applications II_ _ F e a tu re s • Composite type composed of two low ON-resistance P-channel MOSFET chips for ultrahigh-speed

Contextual Info: I Ordering num ber: EN4906 FX508 NPN Epitaxial P lanar Silicon Transistor S A \ Y O i H igh-Current Switching Applications A p p licatio n s • LCD backlight drive F e a tu re s •Composite type with 2 NPN transistors contained in one package, facilitating high-density mounting.

Contextual Info: Ordering number :EN4885 No-4885 FX602 // N-Channel Silicon MOSFET SAHYO i Ultrahigh-Speed Switching Applications • H L _ I I _ _ F eatu res ■Composite type composed of two low ON-resistance N-channel MOSFET chips for ultrahigh-speed

Contextual Info: Ordering number:EN4893 FX853 MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type composed of a low ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward

Contextual Info: Ordering number:EN4886 FX603 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of two low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.

BX-1458

Abstract: IC UA 1458 marking 503 BX1458 2SB1202 FX503
Contextual Info: Ordering number:EN4903 FX503 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Package Dimensions • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. · The FX503 houses two chips, each being equivalent

marking 501

Abstract: BX1388
Contextual Info: Ordering number:EN4877 FX501 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Package Dimensions • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. · The FX501 houses two chips, each being equivalent

EN5030

Contextual Info: Ordering number:EN5030 FX510 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Package Dimensions • Composite type with 2PNP transistors contained in one package, facilitating high-density mounting. · The FX510 houses two chips, each being equivalent

EN5387

Abstract: FX901 PNP Transistor MOSFET
Contextual Info: Ordering number:EN5387 FX901 PNP Epitaxial Planar Silicon Transistor N-Channel MOS Silicon FET Silicon Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a 2.5V drive N-channel MOSFET with a built-in low

FX207

Abstract: marking 207
Contextual Info: Ordering number:EN5050 FX207 P-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Very high-speed switching. · 2.5V drive. unit:mm 2121 [FX207] Switching Time Test CIrcuit 1:No Contact 2:Gate

Contextual Info: Ordering number:EN4917 FX205 P-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Very high-speed switching. · Low-voltage drive. unit:mm 2121 [FX205] Switching Time Test CIrcuit 1:No Contact

TA-0118

Abstract: MOSFET FOR 50HZ SWITCHING APPLICATIONS
Contextual Info: Ordering number:EN4893 FX853 MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type composed of a low ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward

Contextual Info: Ordering num ber:EN 4903 _FX503 No.4903 i PN P E pitaxial Planar Silicon T ransistor High-Current Switching Applications F e a tu r e s •Composite type w ith 2 PN P tran sisto rs contained in one package, facilitating high-density mounting. • The FX503 houses two chips, each being equivalent to the 2SB1202, in one package.

FX604

Abstract: 2SK1467
Contextual Info: Ordering number:EN4887 FX604 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of two low ON-resistance N-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.

Contextual Info: Ordering number:EN5051 FX208 N-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Very high-speed switching. · 2.5V drive. unit:mm 2121 [FX208] Swithing Time Test CIrcuit 1:No Contact 2:Gate

Contextual Info: Ordering number: EN4886 FX603 No.4886 \vo P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications _ u_ _ _ F e a tu re s • Composite type composed of two low ON-resistance P-channel MOSFET chips for ultrahigh-speed

sb30-03p

Abstract: C51ST
Contextual Info: Ordering num ber: E N 5028 No.5028 SA% YOi // _ FX401 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC-DC Converter F eatures • Complex type of a low saturation voltage, high speed switching and large current PNP transistor and

Contextual Info: O rdering num ber: EN 5029 FX509 No.5029 PN P E p itax ial P la n a r Silicon T ran sisto r SA iVO High-Current Switching Applications F e a tu r e s • Com posite type w ith 2 PN P tran sisto rs contained in one package, facilitatin g high-density mounting.

Contextual Info: Ordering number:EN4895 FX855 MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type composed of a ow ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward

2SJ416

Abstract: FX856 SB07-03P 53723
Contextual Info: Ordering number:ENN5372A MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FX856 DC/DC Converter Applications Package Dimensions unit:mm 2119 [FX856] 5.0 0.5 1.5 1.5 6 0.7 5 5.9 1.0 • The FX856 composite device consists of following two devices to facilitate high-density mounting. One

Contextual Info: Ordering number:EN5029 FX509 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Package Dimensions • Composite type with 2PNP transistors contained in one package, facilitating high-density mounting. · The FX509 houses two chips, each being equivalent

EN5051

Contextual Info: Ordering number:EN5051 FX208 N-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Very high-speed switching. · 2.5V drive. unit:mm 2121 [FX208] Swithing Time Test CIrcuit 1:No Contact 2:Gate

FX504

Abstract: marking 504
Contextual Info: Ordering number:EN4904 FX504 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Package Dimensions • Composite type with 2 NPN transistors contained in one package, facilitating high-density mounting. · The FX504 houses two chips, each being equivalent