750MM2X0 Search Results

Contextual Info: Ordering number:EN4893 FX853 MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type composed of a low ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward

Contextual Info: Ordering number:EN4886 FX603 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of two low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.

BX-1458

Abstract: IC UA 1458 marking 503 BX1458 2SB1202 FX503
Contextual Info: Ordering number:EN4903 FX503 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Package Dimensions • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. · The FX503 houses two chips, each being equivalent

marking 501

Abstract: BX1388
Contextual Info: Ordering number:EN4877 FX501 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Package Dimensions • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. · The FX501 houses two chips, each being equivalent

EN5030

Contextual Info: Ordering number:EN5030 FX510 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Package Dimensions • Composite type with 2PNP transistors contained in one package, facilitating high-density mounting. · The FX510 houses two chips, each being equivalent

EN5387

Abstract: FX901 PNP Transistor MOSFET
Contextual Info: Ordering number:EN5387 FX901 PNP Epitaxial Planar Silicon Transistor N-Channel MOS Silicon FET Silicon Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a 2.5V drive N-channel MOSFET with a built-in low

FX207

Abstract: marking 207
Contextual Info: Ordering number:EN5050 FX207 P-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Very high-speed switching. · 2.5V drive. unit:mm 2121 [FX207] Switching Time Test CIrcuit 1:No Contact 2:Gate

Contextual Info: Ordering number:EN4917 FX205 P-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Very high-speed switching. · Low-voltage drive. unit:mm 2121 [FX205] Switching Time Test CIrcuit 1:No Contact

TA-0118

Abstract: MOSFET FOR 50HZ SWITCHING APPLICATIONS
Contextual Info: Ordering number:EN4893 FX853 MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type composed of a low ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward

FX604

Abstract: 2SK1467
Contextual Info: Ordering number:EN4887 FX604 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of two low ON-resistance N-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.

2SB1203

Abstract: FX505 ITR11390 ITR11391 bx13 n4879
Contextual Info: 注文コード No. N 4 8 7 9 FX505 No. N4879 O0500 FX505 特長 PNP エピタキシァルプレーナ形シリコントランジスタ 大電流スイッチング用 ・PNP トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。

2SC3647

Abstract: FX507 ITR11412 ITR11413 ITR11414
Contextual Info: 注文コード No. N 4 9 0 5 FX507 No. N4905 O3000 FX507 NPN エピタキシァルプレーナ形シリコントランジスタ 大電流スイッチング用 用途 ・液晶バックライトドライブ用。 特長 ・NPN トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。

TA-2770

Abstract: 2SJ416 FX856 53723
Contextual Info: 注文コード No. N 5 3 7 2 A FX856 No. N 5 3 7 2 A 30100 新 開発速報 No. ※ 5372 とさしかえてください。 FX856 特長 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード

2SB1205

Abstract: FX501 ITR11346 ITR11347 ITR11348 ITR11349 BX1388
Contextual Info: 注文コード No. N 4 8 7 7 FX501 No. N 4 8 7 7 80300 FX501 特長 PNP エピタキシァルプレーナ形シリコントランジスタ 大電流スイッチング用 ・PNP トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。

Contextual Info: Ordering number:EN5051 FX208 N-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Very high-speed switching. · 2.5V drive. unit:mm 2121 [FX208] Swithing Time Test CIrcuit 1:No Contact 2:Gate

Contextual Info: Ordering number:EN4895 FX855 MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type composed of a ow ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward

2SJ416

Abstract: FX856 SB07-03P 53723
Contextual Info: Ordering number:ENN5372A MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FX856 DC/DC Converter Applications Package Dimensions unit:mm 2119 [FX856] 5.0 0.5 1.5 1.5 6 0.7 5 5.9 1.0 • The FX856 composite device consists of following two devices to facilitate high-density mounting. One

Contextual Info: Ordering number:EN5029 FX509 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Package Dimensions • Composite type with 2PNP transistors contained in one package, facilitating high-density mounting. · The FX509 houses two chips, each being equivalent

EN5051

Contextual Info: Ordering number:EN5051 FX208 N-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Very high-speed switching. · 2.5V drive. unit:mm 2121 [FX208] Swithing Time Test CIrcuit 1:No Contact 2:Gate

FX504

Abstract: marking 504
Contextual Info: Ordering number:EN4904 FX504 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Package Dimensions • Composite type with 2 NPN transistors contained in one package, facilitating high-density mounting. · The FX504 houses two chips, each being equivalent

2SD1803

Abstract: FX506 bx139
Contextual Info: Ordering number:EN4880 FX506 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Package Dimensions • Composite type with 2PNP transistors contained in one package, facilitating high-density mounting. · The FX506 houses two chips, each being equivalent

FX203

Abstract: MARKING 203 52641
Contextual Info: Ordering number:EN5264 FX203 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2121 [FX203] Switching Time Test CIrcuit 1:No Contact

2SB1203

Abstract: FX505
Contextual Info: Ordering number:EN4879 FX505 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Package Dimensions • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. · The FX505 houses two chips, each being equivalent

2SD1803

Abstract: FX506 ITR11401 ITR11402 ITR11403 N4880
Contextual Info: 注文コード No. N 4 8 8 0 FX506 No. N4880 O0500 FX506 特長 NPN エピタキシァルプレーナ形シリコントランジスタ 大電流スイッチング用 ・NPN トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。