2SA1416 Search Results

Contextual Info: ^O rd e rin g number . EN 2 0 0 5 A 2SA1416/2SC3646 NO.2005A PN P/N PN Epitaxial Planar Silicon Transistors SAiYO i High-Voltage Switching Applications Features . Adoption of FBET, MBIT processes. . High breakdown voltage and large current capacity. . Fast switching time.

Contextual Info: 2SA1416 / 2SC3646 Ordering number : EN2005B SANYO Semiconductors DATA SHEET 2SA1416 / 2SC3646 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.

b 817

Abstract: toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a 2SA1194
Contextual Info: - £ Type No. jcg 7 |3 £ Manuf. & T T S « B m SANYO 2SA1703 2SB 793A 2SB 794 2SB 795 fé 2SB 798 2SB 799 . B S b a B H 2SB1119 2SB1122 2SAI 416 m B « 2SB1122 2SB1122 2SA1416 2SA1416 2SA1416 2SA1418 2SB 813 2SB 814 . 2SB 815 2SB 816 _ 2SB 817 ✓ 2SB 818

2SA1416

Abstract: 2SC3646
Contextual Info: Ordering number:EN2005A 2SA1416/2SC3646 NO.2005A SA \YO PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications 1 Features . Adoption of FBET, MBIT processes. . High breakdown voltage and large current capacity. . Fast switching time.

Contextual Info: Ordering number : EN2005C 2SA1416/2SC3646 Bipolar Transistor http://onsemi.com – 100V, (–)1A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s

2SC3646

Abstract: 2SA1416 ITR03526 ITR03527
Contextual Info: Ordering number:ENN2005A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1416/2SC3646 High-Voltage Switching Applications Features Package Dimensions unit:mm 2038A [2SA1416/2SC3646] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity.

Contextual Info: 2SA1416 / 2SC3646 Ordering number : EN2005C SANYO Semiconductors DATA SHEET 2SA1416/2SC3646 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity

SMD BR 08

Abstract: 2SA1416
Contextual Info: Transistors SMD Type High-Voltage Switching Applications 2SA1416 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Time Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage

2SA1416

Abstract: 2SC3646 ITR03526
Contextual Info: 2SA1416 / 2SC3646 Ordering number : EN2005B SANYO Semiconductors DATA SHEET 2SA1416 / 2SC3646 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.

2SA1416

Abstract: 2SC3646
Contextual Info: 2SA1416 / 2SC3646 注文コード No. N 2 0 0 5 B 三洋半導体データシート 半導体ニューズ No.N2005A をさしかえてください。 2SA1416 / 2SC3646 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ 高耐圧スイッチング用

Contextual Info: SMD Type Product specification 2SA1416 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Time Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage

2SC3646

Abstract: 2SA1416
Contextual Info: Ordering number:EN2005A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1416/2SC3646 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching time.

Contextual Info: O r d e rin g n u m b e r : E N 4 4 9 4 FP205 No.4494 PN P/N PN E pitaxial P lan ar Silicon T ransistors SAXYO i Push-Pull Circuit Applications F e a tu re s • Composite type with a PN P transistor and an NPN tran sisto r in one package, facilitating high-density

Contextual Info: O rdering num ber: EN 4494 FP205 No.4494 PN P/N PN E pitaxial P lan ar Silicon T ransisto rs SA%YO Push-Pull Circuit Applications Features • Com posite type w ith a PN P tran sisto r and an N PN tran sisto r in one package, facilitating high-density m ounting.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

C3467

Abstract: SRE 210 B a1370 A1728 C4519 A1338 B1122 C3392 D1622 FP201
Contextual Info: sa iHyo PCP4/5 series :FPseries l High performance composite type devices suitable for surface mounting which make the sets smallerandlighter. In these times the advantage of new products is to make sets smaller and lighter . Thus, the main market need is that discrete devices are "high performance" as well as being able to realize lighter, thinner,

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

2SA850

Abstract: 2N2216 2N5400 MOTOROLA 2N3064 2SB646A 25M SOT89 motorola bc450 15J1A LOW-POWER SILICON PNP KT214A
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 5 10 -15 20 >= NthAmerSemi NthAmerSemi See Index SGS-Ates Hybrid Semi SGS-Ates Semelab Semelab See Index ~~~~~~ Hitachi Ltd Hitachi Ltd Hitachi Ltd Hitachi Ltd Hitachi Ltd Hitachi Ltd Semicoa NthAmerSemi Space Power

D2493

Abstract: 2097B 2SA1416 2SC3646 FP205 ITR10922 ITR10923
Contextual Info: 注文コード No. N 4 4 9 4 FP205 No. N4494 81000 FP205 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ プッシュプル回路用 ・PNP トランジスタ , NPN トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

transistor b985

Abstract: transistor b544 transistor b764 D1111 TRANSISTOR C3117 TRANSISTOR D1153 transistor D1207 TRANSISTOR D1347 transistor D863 B892
Contextual Info: SAfÊYO PCP Power Chip Pack Transistor Series ale, F e a t u r e s ♦ Very small size making it possible to provide high-densi ty. small-sized hybrid lCs. ♦ Various packing of devices are available to meet automatic assembly requirements. ♦ High reliability and stable quality.

2SA1301 TOSHIBA

Abstract: da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646 2SA1782
Contextual Info: - 24 Si - tt « € Manuf- B S 5 a a h h = SANYO » 2SA1115 * TOSHIBA $ m b NEC ÍL HITACHI 1onn 2SA1782 2SA1048 2SA1782 2SA1048CL 3t 3? X 3Ë K «£ « T -y-viry 0 3Ï 0 ÍL B ÍL 0 ÍL 2SA1249 2SA1162 2SA1337 2SA1220A 2SA812 ZSB631K 2SB827 2SB817 2SA1207

2SB596

Abstract: 2SB686 2SB824 2sb773 2SB773A 2SA1232 2SB 773 2SB965 2SA1283 773a
Contextual Info: - 52 - m % £ Type No. Manuf. = i# SANYO jpr ^ TOSHIBA S H NEC B ÍL HITACHI * ± a FUJITSU fâ T MATSUSHITA = m MITSUBISHI a — A ROHM 2SB 762 . «1 T 2SB596 2SB703 2SB859 2SB942 2SB1334 2SB 762A fé T 2SB596 2SB703 2SB859 2SB942A 2SA1634 2SB 762B fé T

2SA1115

Abstract: 2sa1015 2SB1340 2SA1432 2SA1015L 2SB1342 2SB1370 A1592 2sa112 2SB753
Contextual Info: - m £ tt « Type No. Man uf. 2SB 1249 = 2 SB 1250 2 SB 1251 2SB 1252 fé T K T s fâ T fô T 2 SB 1253 2SB 1257 2SB 1258 - if'y'ry ÿ-yjy 2SB 1259, 2SB 1260 2SB 1261 = £ SANYO 2SA15 9 2 2SB1226 2SB1227 2SB1227 2SB1228 2SBÌ223 2SB1228 a 3C T0SHÍBA 2SA1225