2SA1207 Search Results

transistor 2sc2909

Abstract: 2SA1207 2SC2909 778D N778
Contextual Info: 注文コード No.N 7 7 8 E 2SA1207 / 2SC2909 No. N778E O0899 半導体ニューズ No.778A ’ 87 - 88 データブック個別半導体素子トランジスタ編 No.778D とさしかえてください。 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ

2SA1301 TOSHIBA

Abstract: da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646 2SA1782
Contextual Info: - 24 Si - tt « € Manuf- B S 5 a a h h = SANYO » 2SA1115 * TOSHIBA $ m b NEC ÍL HITACHI 1onn 2SA1782 2SA1048 2SA1782 2SA1048CL 3t 3? X 3Ë K «£ « T -y-viry 0 3Ï 0 ÍL B ÍL 0 ÍL 2SA1249 2SA1162 2SA1337 2SA1220A 2SA812 ZSB631K 2SB827 2SB817 2SA1207

Contextual Info: Ordering number: EN 778E 2SA1207/2SC2909 I P N P/N PN E p itax ial P la n a r Silicon T ran sisto rs S A iV D J High-Voltage Switching, AF 60W Predriver Applications F e a tu re s • Adoption of FBET process. . H igh breakdow n voltage. - E xcellent lin e arity of hpE and sm all c0b.

Contextual Info: Ordering number: EN 778E 2SA1207/2SC2909 SÎ0.778E P N P /N PN E pitaxial P la n a r Silicon T ran sisto rs SA i YO r. High-Voltage Switching, AF 60W Predriver Applications F e a tu re s - Adoption of FBET process. . H igh breakdow n voltage. • E xcellent lin e arity of hpg and sm all c0b.

2SA1207

Abstract: 2SC2909 ITR02989
Contextual Info: Ordering number:ENN778F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob.

2SC2909

Abstract: 2SA1207 2sa120
Contextual Info: Ordering number:EN778E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob.

2sa2909

Abstract: 2SA1207 2SC2909 2SA29 2SA120
Contextual Info: Ordering number: EN 778E 2SA1207/2SC2909 N0.778E PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, AF 60W Predriver Applications i Features • Adoption of FBET process. . High breakdown voltage. •Excellent linearity of hp^ and small c0b.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SA1281

Abstract: 2SA1277 2SA1273 2sa1274 2SA1251 2SA1218 2SA1236 2sc3248 2sa1229 2SA1267
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA1201 -120 -5 -800 500 150 140 -5 -100 120* 27 2SA1202 -80 -5 -400

2sa970

Abstract: 2SA564A 2SA906 2sa1015 2SA988 2SA904A 2SA1142 2SA1207 2sa949 2SA1038
Contextual Info: - 2SA 893A 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 894 895 896 89/ 898 ^ 899 ^ 900 / 901 2SA 902 ^ 2SA 903 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 904 905 ^ 906 ^ 912 913 913A 914 915 — 916 , 917 ^ 918 2SA 920 2SA 921 2SA 2SA 2SA 2SA 2SA 922 S 923 '' 924 925

2SB536A

Abstract: 2SA1301 TOSHIBA 2SB1320A 2SA1356 2SB1318 2SA1624 2SB1242 2sa1133 2SA1426 2SA1431
Contextual Info: - 2SB 2SB 2SB 2SB 2SB 1321 ^ 1322 ^ 1323 1324 ^ 2SB 2SB 2SB 2SB 2SB 2SB 2SB 1326 1328 1329 , 1330 * 1331 1332 1333 / 2SB 2SB 2SB 2SB 2SB 2SB 1336 1337 1338 1339 1340 1341 *• 2SB 1345 2SB 1346 2SB 1347 SANYO B M TOSHIBA NEC ÏL HITACHI * ± a FUJITSU fâ

2SA1015

Abstract: 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A
Contextual Info: - 34 - m s Type No. £ M a n u f. 2SA 1535 , tö T 2SA 1535A tö T = * SANYO 2SB1037 X 3E TOSHIBA B 'S NEC 1 Tn« B tL HITACHI H ± il FUJITSU tö T MATSUSHITA — M MITSUBISHI 2SB649A = 2SA 1542 □—A 2SA 1543 □— A 2SA1015 2SB642 2SA 1544 b m. 2SA1624

2SB737

Abstract: 2SA1015 2SA978 2SA933 2sa1306 2SA933 R 2SA970 2SA1127 2SA1142 2SA929
Contextual Info: - m % tt 2S A 973 « M a n u f. T y p e No. J SANYO tö T 2S A 9 7 7 tö T 2SA1209 2S A 9 7 7 A fé T 2SA1352 = » _ * 2S A 978 2 SA 979 X TOSHIBA NEC 2S A988 2SA1030 2SA1142 2SB648 ± FUJITSU a T & M ATSUSHITA H £ M ITSU BISHI □ — A RO HM 2SA933 2SA1127

2SB1406

Abstract: 2SK715
Contextual Info: Product Selection Guide by Function Very High Frequency Applications Classified by package and arran g ed in order of decreasing fr. M inus sign for P N P is om itted due to space lim itations. PG tM A G ,N F:f= 0.9G H z Type N um ber Pilgt* 2SC3779 NP NP

2SA999

Abstract: 2SA1015 2sa733 2SA1038 2sa 1023 2SA1026 2SA921 2SA933 2SB646 2SB1085B
Contextual Info: - 20 - m * Type No. a 2 SA 1006A B Is 2SA 1006B 2SA 1007 , 2SA 1008 , a a a a 2SA 1010 ^ 2SA 1011 „ 2SA 1012 „ 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 1013 ' 1014 1015,. 1016 ^ 1016K 1017 ^ 1018 ^ 1019 „ 1020 / 2SA 1021 2SA 1022 2SA 1023 2SA 1024 H ' 2SA 1025 ^

2SB596

Abstract: 2SB686 2SB824 2sb773 2SB773A 2SA1232 2SB 773 2SB965 2SA1283 773a
Contextual Info: - 52 - m % £ Type No. Manuf. = i# SANYO jpr ^ TOSHIBA S H NEC B ÍL HITACHI * ± a FUJITSU fâ T MATSUSHITA = m MITSUBISHI a — A ROHM 2SB 762 . «1 T 2SB596 2SB703 2SB859 2SB942 2SB1334 2SB 762A fé T 2SB596 2SB703 2SB859 2SB942A 2SA1634 2SB 762B fé T

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SA934

Abstract: 2SA970 2sa1015 2SA953 2sa933 2sa952 2sB1064 2SA1782 2SA720 2SA836
Contextual Info: tt € S> T y p e No. Manuf. « H $ SANYO M £ TOSHIBA B 11 NEC S ÍL HITACHI * ± a FU JITSU të T MATSUSHITA □ MITSUBISHI — A ROHM 2SA 671 — '' ÍL 2SB507 2SB596 2SA985 2SB856 2SB941 2SB1033 2 SA 672 B SL 2SA1782 2SA1015 2SA953 2SA836 2SA720 2SAS54

2SA1015

Abstract: 2SA733 2SA847A 2SA968 2SA933 2SA823 2SA817 2sa777 2SA970 2SA935
Contextual Info: - m « Type No. 2SA 816 2SA 817 -• 2 SA 818 — 2SA 819 2SA 2SA 2SA 2SA 820 821 822 823 ^ 2SA 824 2SA 825 2SA 826 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 827 828 829 830 — 831 832 ^ 833 834 2SA 8 3 5 2SA 836-'' 2SA 837 2SA 838 2SA 839,*— 2SA 840 ^ 2SA 8412SA 842 2SA 843

2SB817

Abstract: 2sa1115 2SA992 2sa1015 2sa1302 2SA1142 sanyo 1042 2SA1123 2SA847A 2SA1782
Contextual Info: - 21 tt SJ € T y p e No. € Manuf. = SANYO m M TOSHIBA 2E m NEC 3L HITACHI S ± 3S FUJITSU ta t MATSUSHITA h m MITSUBISHI 2SA 1038 . □— A 2SA10 16 K 2SA970 2SA992 2SA1123 2SA847A 2SA 1039 □— A 2SA 10 16 2SA970 2SA992 2SA1123 2SA847A 2SA949 2SA1142

2SA934

Abstract: 2sa933 2sa726 2sa999 2SA1005 2SA1115 2sb849 2SA999L 2SA715 2SB1314
Contextual Info: - 12 - s « Type No. tt S a 2 SA 7 1 2 2 SA 7 1 3 r0 < 2 SA 7 1 5 2 SA 7 1 7 B h •>- s 2S A 719 , , fé 2 SA 7 2 0 , fé 2S A 7 2 0 A ♦2 2 SA 7 2 1 _ fé 2S A 7 2 2 — fé 2 SA 7 2 3 2S A 7 2 4 2 SA 72 5 2S A 728 - 2 SA 7 2 8 2SA 730 y ' 2SA 731 2SA 732 ✓

2SC308

Abstract: 2SA1699 2SA1392
Contextual Info: S m a l 1- s i g n a l SA\YO Transistors For low noise, h i g h v o l t a g e a n d g e n e r a l use We have other smal 1-signal transistors which are not included in any classified types nor packages in this document. They are for low noise, high voltage and general use.

2SB1205

Abstract: 2S81119 2Sk222 2sa128
Contextual Info: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440