2SB827 Search Results

2SB827

Abstract: 2SD1063
Contextual Info: JMnic Product Specification 2SB827 Silicon PNP Power Transistors • DESCRIPTION ・With TO-3PN package ・Complement to type 2SD1063 ・Wide area of safe operation ・Low collector-emitter saturation voltage : VCE sat =(–)0.4V max. APPLICATIONS ・Universal high current switching as solenoid

2SD1063

Abstract: 2SB827
Contextual Info: SavantIC Semiconductor Product Specification 2SD1063 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3PN package ·Wide area of safe operation ·Low collector saturation voltage ·Complement to type 2SB827 APPLICATIONS ·Universal high current switching as solenoid

2SB827

Abstract: 2SD1063
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB827 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.4V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1063

2SB827

Abstract: 2SD1063 SC-65
Contextual Info: 2SD1063 NPN PLANAR SILICON TRANSISTOR SC-65 ! PSW / D / DDC ! COMPLEMENTARY TO 2SB827 ABSOLUTE MAXIMUM RATING TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation Junction Temperature

2SB827

Abstract: W001 n068
Contextual Info: I Ordering num ber: EN688G 2SB827/2SD1063 SA\YO PNP/NPN Epitaxial Planar Silicon Transistors 50V/7A Switching Applications i Use : U n iv e rs a l h ig h c u r r e n t s w itc h in g as s o le n o id d r i v in g , h ig h sp eed i n v e r t e r and c o n v e rte r.

2SD568L

Abstract: idb674 2N547 2SD569L nec npn rf 2SD8430 2SD568K
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) PD Max hFE *T ON) Min (Hz) Max k)N Max (A) (s) ICBO r (CE)Mt Max (Ohms) Toper Max Package Style CO D vices 20 Watts or More, (Cont'd) 5 10 2SA1185 2SB827 2SD1063 2SB754

2SB827

Abstract: 2SD1063 SC-65
Contextual Info: 2SB827 PNP PLANAR SILICON TRANSISTOR SC-65 ! PSW / D / DDC ! COMPLEMENTARY TO 2SD1063 ABSOLUTE MAXIMUM RATING TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation Junction Temperature

2SB827

Abstract: 2SD1063
Contextual Info: SavantIC Semiconductor Product Specification 2SB827 Silicon PNP Power Transistors • DESCRIPTION ·With TO-3PN package ·Complement to type 2SD1063 ·Wide area of safe operation ·Low collector-emitter saturation voltage : VCE sat =(–)0.4V max. APPLICATIONS

2SA1301 TOSHIBA

Abstract: da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646 2SA1782
Contextual Info: - 24 Si - tt « € Manuf- B S 5 a a h h = SANYO » 2SA1115 * TOSHIBA $ m b NEC ÍL HITACHI 1onn 2SA1782 2SA1048 2SA1782 2SA1048CL 3t 3? X 3Ë K «£ « T -y-viry 0 3Ï 0 ÍL B ÍL 0 ÍL 2SA1249 2SA1162 2SA1337 2SA1220A 2SA812 ZSB631K 2SB827 2SB817 2SA1207

622k

Abstract: IC AT 6884 93003 2SB827 2SD1063 ITR08472
Contextual Info: Ordering number:ENN688H PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB827/2SD1063 50V/7A Switching Application Applications Package Dimensions • Universal high current switching as solenoid driving, high speed inverter and converter. unit:mm 2022A [2SB827/2SD1063]

2SB827

Abstract: 2SD1063
Contextual Info: Inchange Semiconductor Product Specification 2SB827 Silicon PNP Power Transistors • DESCRIPTION ・With TO-3PN package ・Complement to type 2SD1063 ・Wide area of safe operation ・Low collector-emitter saturation voltage : VCE sat =(–)0.4V max. APPLICATIONS

2SB827

Abstract: 2SD1063
Contextual Info: Inchange Semiconductor Product Specification 2SD1063 Silicon NPN Power Transistors • DESCRIPTION ・With TO-3PN package ・Wide area of safe operation ・Low collector saturation voltage ・Complement to type 2SB827 APPLICATIONS ・Universal high current switching as solenoid

2SB833

Abstract: 2SB821 2SB817 2sb852k-a 2SB805 2SB806 2SB807 2SB808 2SB810 2SB811
Contextual Info: - 62 - Ta=25BC, *EnííTc=25?0 M 2SB805 2SB806 2SB807 2SB808 2SB810 2SB811 2SB814 2SB815 2SB816 2SB81T ¿¿DOIS 2SB821 2SB822 2SB824 2SB825 2SB826 2SB827 2SB828 2SB829 2SB831 2SB833 2SB834 2SB835 2SB837L 2SB837S 2SB841L 2SB841S 2SB849 2SB849A 2SB850 2SB850A

622k

Abstract: 2SB827
Contextual Info: Ordering number:688H PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB827/2SD1063 50V/7A Switching Applicationsa Applications Package Dimensions • Universal high current switching as solenoid driving, high speed inverter and converter. unit:mm 2022A [2SB827/2SD1063]

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SB557 TOSHIBA

Abstract: 2SB1314 toshiba 2sb554 2SB546A 2SB596 2sa483 2SB554 2SB54 2SB557 2SB857
Contextual Info: 564 565 . 566 y 566AK 2SB 566K 2SB 567 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 568 569 „ 510 571 572 „ 573 ^ 574 575 •576 ' 2SB 577 , 2SB 578 ^ 2SB 579 2SB 2SB 2SB 2SB 2SB 2SB 580581 582 583 584 585 2SB 2SB 2SB 2SB 2SB 2SB 586 595 596 598 599 600 2SB 601

b 817

Abstract: toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a 2SA1194
Contextual Info: - £ Type No. jcg 7 |3 £ Manuf. & T T S « B m SANYO 2SA1703 2SB 793A 2SB 794 2SB 795 fé 2SB 798 2SB 799 . B S b a B H 2SB1119 2SB1122 2SAI 416 m B « 2SB1122 2SB1122 2SA1416 2SA1416 2SA1416 2SA1418 2SB 813 2SB 814 . 2SB 815 2SB 816 _ 2SB 817 ✓ 2SB 818

Contextual Info: Continued from previous page Electrical characteristics T a = 25 t Absolute m uknum ratings hreevcEic VC Blnt) nux 0 1C • IB Type No. type AppRcatloas VCBO (V ) VCEO M 1C (A ) PC (W ) (8 > VCE(ul) max GnV) 1C (A ) IB (m A) hFE VCE (V ) frevcE-ic 1C (A )

2SD1087

Abstract: 2SD1094 2SD1067 2SD1066 2SD1071 "SCA 62" 2SD1063 2SD1064 2SD1065 2SD1069
Contextual Info: - 234 - æXËtë M S ŒJ f± U=2bX¡, *W(ilc=2bV '4v n n # m tt (Ta=25‘ C) [*EPtttyp0] Pe* (max) (V) (A) (V) <W) (ÏÏ) VcB (V) (/¿A) (min) (max) VCE (V) (max) (V) Ic / I e (A) Ic (A) (V) Ib (A) 2SD1063 PSW 60 50 7 60 100 40 70 280 2 1 0.4 4 2SD1064 PSI

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

AC188

Abstract: 2SA1309 2N2907A-PL 2SA1273 2SA1797Q 2SA1538S 2SA1443-NEC DTA143ES mj15004-mot BCX52GEGSMD
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 Tp aH 3M C T O pb l PNP copTMpoBKa no HanpflweHMro Kofl: BFT92 2SB733 AC188 BC369 2SA1273 2SA1309 2SA608 2SA966 2SB774 BC328-25 BC558B BC559C BC858B BC858C BF324 2SA1357 2SA1431 2N2905A 2N2907A

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

80244C

Abstract: RCA1C11 2S8754 mj04 2S8999 BOT42C 2S8553
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 55 60 65 70 75 80 85 90 95 Max 15 15 15 15 15 15 15 20 25 25 75 75 75 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 100 100 100 120 120 120 120 120 120 40 55 120 15 15 20 20 40 40 200 160 240 6.0 6.0 6.0 6.0 6.0 6.0

2SB1205

Abstract: 2S81119 2Sk222 2sa128
Contextual Info: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf