Toshiba 2SD844
Abstract: 2sb754
Contextual Info: TOSHIBA Sb {DISCRETE/OPTO} 2SB754 I 9097250 TOSHIBA » E i <DISCRETE/OPTO 56C SOTTESO DDG73SM oy^ J J - V Í 073^4 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS) U n it HIGH CURRENT SWITCHING APPLICATIONS. 15.9 MAX. £ in mm 3.2± 0.2 POWER AMPLIFIER APPLICATIONS.
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2sb754ddg73sm2sd844toshiba 2sd844 |
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2SD568L
Abstract: idb674 2N547 2SD569L nec npn rf 2SD8430 2SD568K
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) PD Max hFE *T ON) Min (Hz) Max k)N Max (A) (s) ICBO r (CE)Mt Max (Ohms) Toper Max Package Style CO D vices 20 Watts or More, (Cont'd) 5 10 2SA1185 2SB827 2SD1063 2SB754
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2sa11852sb8272sd10632sb754+132sd844et15512sb12242sd16262sa14422sc36922sd568lidb6742n5472sd569lnec npn rf2sd84302sd568k
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2SD844
Abstract: 2SB754
Contextual Info: Inchange Semiconductor Product Specification 2SD844 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SB754 ・High collector current :IC=7A ・Low collector saturation voltage ・High power dissipation APPLICATIONS
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2sd8442sb754 |
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2SD889
Abstract: 2SB772 KT 185 2SB754 2SB793 2SB751A 2sb764 2sb774 2SB753 2SB757
Contextual Info: - 60 - m n. Ta=25íC, *EP(3Tc=25‘ C SS £ m S ii V’ CBO V’ ceo (V) (V) Ici DC) (A) 2SB751A PA/SW -80 -80 -4 2SB753 PSW/PA -100 -80 -7 2SB754 PSW/PA -50 -50 -7 2SB757 HS PSW/PA/Audio/Reg -40 -40 LF PA -60 LF PA LF PA LF PA 2SB761 2SB76ÎA 2SB762 2SB762A
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2sb751a2sb7532sb7542sb757+122sb7612sb761a2sb7622sd968sc-622sb7892sd8892sb772kt 1852sb7932sb7642sb774
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2SD844
Abstract: 2SB754 2SB754 equivalent
Contextual Info: SavantIC Semiconductor Product Specification 2SD844 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SB754 ·High collector current :IC=7A ·Low collector saturation voltage ·High power dissipation APPLICATIONS ·High current switching applications
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2sd8442sb7542sb754 equivalent |
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2SB754
Abstract: 2SD844 2SB754 equivalent
Contextual Info: SavantIC Semiconductor Product Specification 2SB754 Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SD844 ·High collector current :IC=-7A ·Low collector saturation voltage ·High power dissipation APPLICATIONS ·High current switching applications
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2sb7542sd8442sb754 equivalent |
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2sb754
Abstract: 2SD844
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB754 Unit in m m 0 3 .Z ± O .2 HIGH CURRENT SWITCHING APPLICATIONS. POWER A M PLIFIER APPLICATIONS. FEATURES: T -/. • High Collector Current : Ic=-7A • Low Collector Saturation Voltage Æzr : V C E s a t =-0.4V (Max.)
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2sb7542sd844-0j25-50ma+1-10ma
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2sd844
Abstract: 2SB754
Contextual Info: 查询供应商 SavantIC Semiconductor Product Specification 2SD844 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SB754 ·High collector current :IC=7A ·Low collector saturation voltage ·High power dissipation APPLICATIONS
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2sd8442sb754 |
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Toshiba 2SB754
Abstract: 2SB754 Toshiba 2SD844
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS -2SB754 U nit in mm HIGH CU RREN T SW ITCH IN G A PPLICA TIO N S. POW ER AM PLIFIER A PPLICA TIO N S. &9MAX. • • • • High Collector Current : l 0 = —7A Low Collector Saturation Voltage : v CE(sat) = -0.4V (Max.) at I c = - 4A
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-2sb7542sd8442sb754toshiba 2sb754+1toshiba 2sd844
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SB754
Abstract: 2SD844
Contextual Info: V u =i >PNP=SI£S[^ 2SB754 u ? ï Wf c t f X ë . n l. ÿ : I c = —7 A ftÿt • ÿ ê â Î P 'S Œ ^ 'f â ^ 'o : V cEisa t) = - 0 . 4 V ( f t * ) ( I c = - 4 A ) 1 ^ 3 u- ? : P c = 60W(Tc = 25°C) 2SD844 t n > 7' 'J 7 > ? ') tz &- V) i t „ (Ta = 25°C)
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sb7542sd844 |
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2SD844
Abstract: 2SB754 2SB754 equivalent
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB754 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·High Collector Current: IC= -7A ·Low Collector Saturation Voltage: VCE(sat)= -0.4V(Max) @IC= -4A
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2sb7542sd844-50ma2sb754 equivalent |
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2SB754
Abstract: 2SB754 equivalent 2SD844
Contextual Info: Product Specification www.jmnic.com 2SB754 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SD844 ・High collector current :IC=-7A ・Low collector saturation voltage ・High power dissipation APPLICATIONS ・High current switching applications
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2sb7542sd8442sb754 equivalent |
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Transistor 2SA 2SB 2SC 2SD
Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)
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o-126t0-220abo-2202sc4544+132sc44482sc36122bc4201transistor 2sa 2sb 2sc 2sds-au27ms2000a inverterp4005s-av21hs-au273182n2sb 834 transistortransistor 2sc4288adrive ic 2sc3346
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2SD844
Abstract: 2sb754
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD844 Unit in mm HIGH OURRENT SWITCHING APPLICATIONS. 15.9MAX. 03.2±O .2 POWER AMPLIFIER APPLICATION. FEATURES: • High Collector Current • Low Collector : Iq = 7 & Saturation Voltage : vCE sat = 0 -‘iv(M a x -) • High Power dissipation
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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k2645
Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt
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mk135mk136mk137mk138+16mk139mk140mk142mk145mk155157krk2645k4005u664bmosfet k4005mb8719transistor mosfet k4004sn16880nstk5392str451bc417
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BUV48I
Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable
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2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171buv48ibu808dxibd699buv18abd241cfitransistor 2sa1046buw52ibu808dfi equivalentbu724as2sa1046
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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stvdst-01cat22stk411-230estk411-220e+8stk442-130pal005aupc2581vfn1016strg6153rsn313h25stk407-070bmcz3001d
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2N5657 equivalent
Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.
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2n56552n56562n5657tip73b+14tip74tip74atip74btip75tip75atip75b2n5657 equivalent2sa1046bu326bu108bu1002sc2331 ytip47 4192n3792 application notes
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MJE494
Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS
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bd157bd158bd159tip73b+16tip74tip74atip74btip75tip75atip75bmje4942sc1419bd 8042sd675mje104bd581bd135 curvesmj1000dts-40412n5037
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2SD669 equivalent
Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc
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2n66092n37732n66672n6668+13220ab2n63872n63882sd669 equivalentbd801bdy29 equivalentbu1082sc20802sd4362n6021bd345tip122 d-pak package2sd544
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2SC495
Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink
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mjf61072n6107e69369tip73b+16tip74tip74atip74btip75tip75atip75b2sc495nsp41abu108transistor bd614 motorola2sa663bd4122bd661mj1000nsp2100d45vh4 similar
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"Tektronix 475"
Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,
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48/buxbux48bux48aampere32+16tip73btip74tip74atip74btip75tip75atektronix 475equivalent 2n6488tip42c equivalentbu108motorola darlington power transistormotorola 266 to-204aa transistord45h11 equivalent replacementpnp buxtransistor replacement table for transistortip3055 equivalent
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D42C5
Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is
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mje16204tip73btip74tip74a+15tip74btip75tip75atip75btip75cd42c5transistor bc 6472n5302 ebpin out transistor tip2955bs170 replacement2sc141bu108bc 658motorola transistors mje3055 to 127mc7812 to-220
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