2SB757 Search Results

2SB757

Abstract: 2SB 731 2SD847 SC-65 T151 T760 T810 T930 PW20A 2SB75
Contextual Info: 2SB757 P N P J H £ ? 4 r > 7 U 7 l'- i- B E P I T A X I A L P L A N E R T Y P E _ * « , « * < H IG H C U R R E N T . * * > * * H IG H S P E E D S W I T C H I N G I W f é ’+ Â I O u tlin e D r a w in g s 4 .5 ° 2.0 *0J Features

Contextual Info: J.Elieu ^s.mi-L-onaactoi I/ loaucti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SB757 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package •High collector current •Wide area of safe operation

2SB757

Abstract: 2SD847 SC-65
Contextual Info: 2SB757 FUJI POWER TRANSISTOR EPITAXIAL PLANER TYPE HIGH CURRENT, HIGH SPEED SWITCHING Outline Drawings TO-3P Features Excellent linearity in hFE High collector current Excellent safe operating area High reliability 1 : Base 2 : Collector 3 : Emitter Applications

2SB75

Abstract: 2SB757 2SD847 SC-65
Contextual Info: 2SB757 FUJI POWER TRANSISTOR EPITAXIAL PLANER TYPE HIGH CURRENT, HIGH SPEED SWITCHING Outline Drawings TO-3P Features Excellent linearity in hFE High collector current Excellent safe operating area High reliability 1 : Base 2 : Collector 3 : Emitter Applications

2SB75

Abstract: 2sd847 2SB757 npn general purpose high voltage amplifier
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD847 DESCRIPTION •Good Linearity of hFE ·High Collector Current ·Wide Area of Safe Operation ·High Reliability ·Complement to Type 2SB757 APPLICATIONS ·Audio amplifier applications

2SD889

Abstract: 2SB772 KT 185 2SB754 2SB793 2SB751A 2sb764 2sb774 2SB753 2SB757
Contextual Info: - 60 - m n. Ta=25íC, *EP(3Tc=25‘ C SS £ m S ii V’ CBO V’ ceo (V) (V) Ici DC) (A) 2SB751A PA/SW -80 -80 -4 2SB753 PSW/PA -100 -80 -7 2SB754 PSW/PA -50 -50 -7 2SB757 HS PSW/PA/Audio/Reg -40 -40 LF PA -60 LF PA LF PA LF PA 2SB761 2SB76ÎA 2SB762 2SB762A

Contextual Info: 2SB757 P N P l f c * ? + '> '7 JU7 l EPITA XIAL PLANER TYPE *««, HIGH CU R R EN T. HIGH SPEED SWITCHING IW fé’+âs I Outline Drawings 4 5 *° 2.0 *0J Features • hFE<7 ,J—7 ,j T ' f A * £ i ' • ft Excellent linearity in hFE High collector current

2sd847

Abstract: 2SB757
Contextual Info: SavantIC Semiconductor Product Specification 2SD847 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High collector current ·Wide area of safe operation ·Complement to type 2SB757 APPLICATIONS ·Audio amplifications ·Serie regulators ·General purpose power amplifiers

2SB757

Abstract: 2SD847
Contextual Info: JMnic Product Specification 2SB757 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・High collector current ・Wide area of safe operation ・Complement to type 2SD847 APPLICATIONS ・Audio amplifications ・Serie regulators ・General purpose power amplifiers

2SB757

Abstract: 2SD847
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB757 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -40V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD847

2SB757

Abstract: 2SD847
Contextual Info: SavantIC Semiconductor Product Specification 2SB757 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·High collector current ·Wide area of safe operation ·Complement to type 2SD847 APPLICATIONS ·Audio amplifications ·Serie regulators ·General purpose power amplifiers

2SB757

Abstract: 2SB75 2SD847
Contextual Info: Inchange Semiconductor Product Specification 2SB757 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・High collector current ・Wide area of safe operation ・Complement to type 2SD847 APPLICATIONS ・Audio amplifications ・Serie regulators

transistor m6e

Abstract: ET391 ET1275 2SC3551 equivalent 1SI50A-100 2SB757 ET191 ET367 M101 1S150A-050
Contextual Info: BIPOLAR TRANSISTORS Ratings and Specifications CO LL ME R S E M I C O N D U C T O R INC MAE D Bi 2 2 3 Ö 7 S 2 D 0 0 1 b 0 3 13T H C O L "•pV3>-t3 m Buffer drive tra n sisto rs • Best suited for driving transistor m od ules. • A ll term in a ls are insulated from m ou n tin g plate.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

ET-191

Contextual Info: TRANSISTORS IC AM PS Max. 3 5 IC AM PS Max. VceoV Pc su s W 800 Pc W 80 Device Type NPN 2SC3550 400 60 180 80 2SD921 800 40 Device Type NPN 2SC2929 2SC3549 800 80 2SC3551 50 25 2SD1157 1000* 80 ET383 200 25 2SD834 250 60 2SD1073 100 80 ET393 -80 30 2SB862*

et1275

Abstract: M101 2SC3551 equivalent
Contextual Info: B IP O LA R T R A N S IS T O R S R atings and Specifications COLLMER Q3 SEMICONDUCTOR INC M6E D • 22307^2 0D01b03 13 1 « C O L Buffer drive tra n sisto rs • B e st su ite d fo r d riv in g t r a n sis to r m o d u le s. • A ll t e r m in a ls are in su la te d fro m m o u n t in g plate.

2SC15-0

Abstract: 2SB753 2SB754 2SB757 2SB764 2SD837 ep 130
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2sc4977

Abstract: transistor 2SC4977 25c2625 2SC2625 2SC2047 2SC4977 transistor ET-191 2SC4795 2SC3320 ET391
Contextual Info: FUJI <S SWITCHING TRANSISTORS B| TO-220AB T O -3 P • t ' 5 /% ■m * 1 * 1 T O -3 P F BBS 1C AMPS Max. 3 80 Device Type NPN 2SC3550 180 80 2SD921 800 80 2SC3551 1000* 80 ET383 V ceoV sus 800 5 Pc W IC AMPS Max. 400 60 Device Type NPN 2SC2929 800 40 2SC3549

KT819B

Abstract: KT818A BD347 MJE1660 2SB629 BD191 1561-0403 BDT52 KT818B 2sb757
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type "c Max fT t0N Max hFE 'CBO r V BR CEO Max Max (A) Of) ON) Min (Hz) (A) (s) Max (Ohms) PD (CE)eat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15

2sb757

Abstract: 2SC3551
Contextual Info: « /\°7 —x / W X / Power Devices • / S '7 -h 7 i- iS / K f l'7 Power Transistor (Molded types) r a iÎŒ i li M T .'f y 3 - > ? b ~ 7 > v High voltage high speed switching transisitors V it e Voits tc Cent. Amps. Pc : fere (Mié.) Watts to Amps. VCE

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SD818

Abstract: 2SD844 fst 240 2sb764 2SD859 2SD811 2SD812 2SD813 2SD814 2SD814A
Contextual Info: - 226 - T a = 2 5 eC . * E P ( ä T c = 2 5 ‘ C »CBO m Ic(DC) Pc Pc* (A) (W) (W) (V) tt (UA) (T a = 2 5 t : ) U/tr V/Nr" »CB (V) M lldA/ (V) m hp fmay^ (A ) 1" (V) [* E P (S typ ffi] '(V)' '(V)' Ic (A) 0.5 6 50 1000 900 10 40 5 PA 80 80 5 40 50 80 40

2SB757

Abstract: 2SD847 SC-65
Contextual Info: 2SD847 t ± NP NHf i i f i i j f y U— - '< r7 - b ÿ > it Z ÿ TRI PLE D IFFU SED PLA N ER T YPE HIGH P O W ER DARLINGTON HIGH S P E E D SW IT C H IN G • : Outline Drawings : Features • hFt<7 i)—7 i) ,T ' tif & \.' • Excellent linearity hFE

2sb504

Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Contextual Info: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St