2SD836
Abstract: 2SB750 Y7W MARKING 2SD836A 2SD814A j2540 MARKING Y7W 2SB750A 2SD813 2SD814
Contextual Info: PANASONIC INDL/ELEKiSEMI} 72C D I h^EflSM □□□T403 n • W ~ I T -2 -J -/S ;_ 2 S D 8 1 3 h 2SD813 '> ij N P N x tf £ =£■'> T7 ^U"70U — N P N Epitaxial Planar Output Amplifier ■ 1# ^ / F e a t u r e s
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2sd81314/electrical2sd8362sb750+7y7w marking2sd836a2sd814aj2540marking y7w2sb750a2sd814
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2SD813
Abstract: XN04503 XN4503
Contextual Info: Composite Transistors XN04503 XN4503 Silicon NPN epitaxial planer transistor ● 3 2 0.50+0.10 –0.05 1.1+0.2 –0.1 10° 2SD0813(2SD813) x 2 elements • Absolute Maximum Ratings Parameter 0 to 0.1 ● (Ta=25˚C) Symbol Ratings Unit Collector to base voltage
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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1032B
Abstract: 2SD845 2SD813 2SD1010 nec 1021 2SC3622 1012 TOSHIBA 1053 2sd1020 2SB1012
Contextual Info: - £ m Type No. 2SD 1010 2SD 1011 2SD 1012 2SD 1017 *- 2SD 1018 2SD 1020 ^ ^ it € H ># SANYO fâ T 2SC3069 fâ T 2SC3495 M £ TOSHIBA 'S NEC B ÍL HITACHI B 2SD 1023 2SD 1024 - %iWjt 2SD 1026 2SD 1029 1030 1031 1032 1032A 2 SO 1032B 2SD 1033 2SD 1034 ^ 2SD
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2sd10112sd10122sd10172sd1018+142sd10202sd10212sd10222sc36222sc30692sc34951032b2sd8452sd8132sd1010nec 10211012 toshiba10532sb1012
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RTIP144C
Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.
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2sb11862sb1186a2sa13042sa1306+162sa13052sb12742sb10152sb11332sb12872sb1185rtip144crtin141crtin141s2sd947 equivalent2sd612kequivalent of transistor 2sa1115rtin241crtip2412sd880 equivalentrtin140c
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marking 5y transistor
Abstract: 2SD813 XN04503 XN4503
Contextual Info: Composite Transistors XN04503 XN4503 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output +0.2 2.8 –0.3 +0.25 3 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 25 V Rating Collector to emitter voltage
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y9w marking
Abstract: 2SB751 2SB759A 2SD837 2SB759 2sd837a 2SB751A ULN pnp vc2545 Si PNP Epitaxial Planar Darlington
Contextual Info: PANASONIC INDL/ELEK-CSENI} h ^ y V T S _ 7SC D | bT3 2 flS4 " 7 ^ 3 3 > T L e7 □ □□flat.D □ 2SB751, 2SB751A 2SB751, 2SB751A > ij =i v P N P x UV h Si P N P Epitaxial Planar Darlington JbZ fi'— i-J& jr— i&mi&WtlMtyi f f l / A F Power Amplifier
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bt32fls42sb7512sb751a2sd837+72sd837ay9w marking2sb759a2sb759uln pnpvc2545si pnp epitaxial planar darlington
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2SB751
Abstract: 2SD844 2SD843 2SD845 2SD847 2SD874 SWPA
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2sd8822sd8952sd8962sd813+72sb7512sd8442sd8432sd8452sd8472sd874swpa
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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an6512n
Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Contextual Info: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.
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mn115pmn116pmn1201amn1201m+15mn1201smn1202mmn1204amn1204bmn1204emn1204fan6512nmn1225mn1280mn6520mn6130mn6147cmn12c261dmn12c201dmn3107
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2SD818
Abstract: 2SD844 fst 240 2sb764 2SD859 2SD811 2SD812 2SD813 2SD814 2SD814A
Contextual Info: - 226 - T a = 2 5 eC . * E P ( ä T c = 2 5 ‘ C »CBO m Ic(DC) Pc Pc* (A) (W) (W) (V) tt (UA) (T a = 2 5 t : ) U/tr V/Nr" »CB (V) M lldA/ (V) m hp fmay^ (A ) 1" (V) [* E P (S typ ffi] '(V)' '(V)' Ic (A) 0.5 6 50 1000 900 10 40 5 PA 80 80 5 40 50 80 40
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2sd8112sd8122sd8132sd814+102sd814a2sd8182sd8192sd841zmw422sb7532sd844fst 2402sb7642sd859
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ON3105
Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Contextual Info: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S
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mn1001mn1020215mn1020407mn1020415+16mn1020715mn102lf53gmn1040mn110mn1101mn115on31052sd2603mn41174052sc901bmn6520mn1280mn1225mn6147c2sc5573gn2013
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59
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2sb504
Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Contextual Info: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St
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s029747ss9632sb5042t306+52n59832sd5882sd732sc497hd6801v
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2SB667
Abstract: MN41C4256-08 MN41256A08 MN187164 MN41256A-08 MN2114-3 3sk129 MN1455LF MN41464A08 MN6404
Contextual Info: Discontinued Types • Discontinued •m o s L S Is Type No. Alternative MN1001 Type No. Alternative Type No. — MN14T6 MN1418 — MN15621 MN110 MN1101 — MN1420 - — MN1421 - MN115 - MN1425 MN1427 - MN116 — MN1200 - MN1441 MN1201 — MN1202 - MN1204
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mn14t6mn1418mn1420mn1421+16mn1425mn1427mn1441mn1442mn1432mn1450b2sb667mn41c4256-08mn41256a08mn187164mn41256a-08mn2114-33sk129mn1455lfmn41464a08mn6404
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2SD883A
Abstract: 2SD883 2SD853 2SD848A 2SD898B 2SD808 12073A 2SD887 2SD852 2SD815
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD801 800 7 6A 50W(Tc=25ºC) 150 3.5-12 5 4A 2SD802 900 7 6A 50W(Tc=25ºC) 150
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2sd8012sd8022sd8032sd804+1570khz2sd8052sd8062sd8072sd8082sd8092sd883a2sd8832sd8532sd848a2sd898b12073a2sd8872sd8522sd815
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2SB701
Abstract: 2SB773A 2SB773 2SB758A 2SD1033 2SB722 2SB714 2SB756 2SB737 2SB758
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Pc (mA) (mW) Electrical characteristics (Ta=25ºC) DC Current Gain fab/ft* Cob hFE VCE Ic (ºC) (MHz) (pF) (V) (mA) Tj 120W 150 (Tc=25ºC) 125W 150 (Tc=25ºC) 125W 150 (Tc=25ºC) 40W 150
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2sb7012sb7022sb702a2sb703+142sb703a2sb7052sd10332sd8822sd8892sd8952sb773a2sb7732sb758a2sb7222sb7142sb7562sb7372sb758
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marking 5y transistor
Abstract: XN4503 MARKING 5Y 2SD813
Contextual Info: Composite Transistors XN4503 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output +0.2 2.8 –0.3 +0.25 3 Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO 25 V Rating Collector to emitter voltage of Emitter to base voltage
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xn4503100mhzmarking 5y transistormarking 5y+12sd813
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