Nec K 872
Abstract: 2SA1184 2SB1306 2SB1479 2SA1015 2SB873 2SB1086 2SB548 2SB1480 2sb601
Contextual Info: 55 - s « T y p e No. tt € Manuf. m = SANYO JÎÏ TOSHIBA m a NEC ÍL S HITACHI Ä ± àfi F U JITSU fâ T MATSUS H I T A ^ ü MITSUB I S H I □ — A ROHM 2 SB S58 ÎL 2SB824 2SB596 2SB703 2SB942 2SB1334 2SB 859 îl 2SB920 2SB595 2SB703A 2SB942A 2SA1634
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2sb8242sb5962sb7032sb942+162sb13342sb9202sb5952sb703a2sb942a2sa1634nec k 8722sa11842sb13062sb14792sa10152sb8732sb10862sb5482sb14802sb601
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2SB737
Abstract: 2SB694H 2SB709 2SB718 2SB747 2sb707 2SD601 2SD756 2SD756A 2SB698
Contextual Info: - 58 - n Ta=25*C,*EP(iTc=25t5 2SB694H B Ä L F PA/PStf VcBO VcEO (V) (V) Ice D C) (A) Pe Pe* (W) m ^ fó 4# te (Ta=25°C) (max) ( u Pí) VcB (V) (min) (max) Vc e (V) Ic /I e (A) -0.05 LF PA/LS PSW -0.5 -1.5 LF PA/LS PSW -0.5 -1.5 -0.5 2SB703A LF PA/LS PSW
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2sb694h2sb6982sb7032sb703a+132sb7072sb7082sd780asc-592sb736a150mv2sb7372sb7092sb7182sb7472sd6012sd7562sd756a
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B703A
Abstract: D743A 2SB703 2SB703A 2SD703A TIC 136 Transistor 2SD743 703A 2SD743A transistor 2SB 1306
Contextual Info: ¿Z&MOSPEC COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS PNP NPN 2SB703 2SD743 2SD703A 2SD743A .designed for use in audio frequency power amplifier,low speed switching application FEATURES: 4.0 AMPERE COMPLEMENTARY SILICON POWER TRANASISTORS 80-100 VOLTS
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-2sb7032sd743-2sb703a2sd743a+9500ma2sb7032sd703ab703ad743a2sb703atic 136 transistor703atransistor 2sb 1306
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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2SB816
Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
Contextual Info: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3
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2sa12532sb8492sb7752sa1264+142sb9652sb13712sb13722sb8162sa12652sb12122sb9212sb8732sa11202sb1085b2sb 9892sb9412sc43412sb1416
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2SD737
Abstract: 2SD744 2sb737 equivalent 2SD712 2SD736A 2SD778 2SD717 2SB699 2sd730 2SB737
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Pc (mA) (mW) Electrical characteristics (Ta=25ºC) DC Current Gain fab/ft* Cob hFE VCE Ic (ºC) (MHz) (pF) (V) (mA) Tj ºñ°í 2SD701 2SD702 400 5 40A 2SD703 200 5 30A 2SD704 50 7 5A 2SD705
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2sd7012sd7022sd7032sd704+162sd7052sd7062sd7072sd7082sd7092sd7102sd7372sd7442sb737 equivalent2sd7122sd736a2sd7782sd7172sb6992sd7302sb737
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761b nec
Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SA684 2SB686 761-B
Contextual Info: 51 - m % * Type No. 2SB 733 2SB 734 „ « Manuf. = £ SANYO M. 32 TOSHIBA m NEC ÍL HITACHI B M 2SB927 2SB739 1 2SA1705 2SB740 « ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — A ROHM 2SB101Q 2SA684 2SB1035 2SB1041 2SB 736 m 2SA1338 2SB 736A H 2SA1338
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2sb9272sb7392sb10102sa1705+122sb7402sa6842sb10352sb10412sa133s2sa1313761b nec761a2sa684 nec2sb7372sb686761-b
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2SB737
Abstract: 2SD786 EL 14v 4c 2SD758B 2SB733 2SD756 2SD758 2SD772 2SD786S 2sd797
Contextual Info: - 224 - Ta=25'C, *EP(iTc=25‘ C m £ tt & m ä VCBO Vc e o (V) (V) n lc(DC) Pc Pc* Ic b o (A) <W) (W) (Uh) Vro (V) n & 14 hF E (min) (roax) (Ta=25‘ C) Ir/Ir (Aj“ Vp f (V) [*E P (ity p fif] (max) '(V )' Ic CA) Ib (A) 2SD743 H i LF PA/LS PSW 100 80 4
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2sd7432sd743a2sd7552sd756+132sd756a2sd757150mv2sb7372sd786s2sb7382sd786el 14v 4c2sd758b2sb7332sd7582sd7722sd797
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RTIP144C
Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.
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2sb11862sb1186a2sa13042sa1306+162sa13052sb12742sb10152sb11332sb12872sb1185rtip144crtin141crtin141s2sd947 equivalent2sd612kequivalent of transistor 2sa1115rtin241crtip2412sd880 equivalentrtin140c
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2sk2500
Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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c11178jjcv0if0012c11178jjcv0ifmil-hdbk-217milmil10100+11mil-hdbk-217fit2sk2500upc1037haupc648c2sk927nec 2sk2500upd5201gupa64haupd6360c2sh24n13t1
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2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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2sk25002sk1543upd16861gsnec 2sk2500+6upa1559htransistor nec 2sk25002sc4496amc10087f12sa733aupd16861
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2SB616A
Abstract: 616A TRANSISTOR 2SB655A 2SB700A 2SB700 2SB656A 2SB702 2SB702A 616A 957a
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2sb616a616a transistor2sb655a2sb700a+62sb7002sb656a2sb7022sb702a616a957a
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2SB596
Abstract: 2SB686 2SB824 2sb773 2SB773A 2SA1232 2SB 773 2SB965 2SA1283 773a
Contextual Info: - 52 - m % £ Type No. Manuf. = i# SANYO jpr ^ TOSHIBA S H NEC B ÍL HITACHI * ± a FUJITSU fâ T MATSUSHITA = m MITSUBISHI a — A ROHM 2SB 762 . «1 T 2SB596 2SB703 2SB859 2SB942 2SB1334 2SB 762A fé T 2SB596 2SB703 2SB859 2SB942A 2SA1634 2SB 762B fé T
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2sb8242sb5962sb7032sb859+112sb9422sb13342sb942a2sb6862sb7732sb773a2sa12322sb 7732sb9652sa1283773a
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
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pd7500x10679ejav0sg00mf-11341995p+10upc2581upc20022sd1557upa67cupb582upc1237upc3172p4m pin diagram2sc4328upc157
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2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
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4000h2sb4152sb 7102sc1061+72sd5242sb504hd68p012sb5072sa7622sc8272sc1362
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2SB701
Abstract: 2SB773A 2SB773 2SB758A 2SD1033 2SB722 2SB714 2SB756 2SB737 2SB758
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Pc (mA) (mW) Electrical characteristics (Ta=25ºC) DC Current Gain fab/ft* Cob hFE VCE Ic (ºC) (MHz) (pF) (V) (mA) Tj 120W 150 (Tc=25ºC) 125W 150 (Tc=25ºC) 125W 150 (Tc=25ºC) 40W 150
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2sb7012sb7022sb702a2sb703+142sb703a2sb7052sd10332sd8822sd8892sd8952sb773a2sb7732sb758a2sb7222sb7142sb7562sb7372sb758
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