2SB709 Search Results

2SB709A

Abstract: marking Bq sot23 hFE CLASSIFICATION Marking MARKING BQ marking BS SOT-23
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SB709A Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High forward current transfer ratio hFE. +0.1 1.3-0.1 +0.1 2.4-0.1 automatic insertion through the tape packing and the magazine 0.4 3 Mini type package, allowing downsizing of the equipment and

Contextual Info: Product specification 2SB709A Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High forward current transfer ratio hFE. +0.1 1.3-0.1 +0.1 2.4-0.1 automatic insertion through the tape packing and the magazine 0.4 3 Mini type package, allowing downsizing of the equipment and

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A
Contextual Info: Transistor 2SB0709A 2SB709A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm 0.40+0.10 ñ0.05 0.4±0.2 5° 1.50+0.25 -0.05 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and

transistor MAR 543

Abstract: 2SB709A 2SD0601A 2SD601A 2SB0709A
Contextual Info: Transistor 2SD0601A 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) Unit: mm 0.40+0.10 ñ0.05 • Features 5° 0.4±0.2 2.8+0.2 -0.3 1.50+0.25 -0.05 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage

marking BR

Abstract: 2SB709A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB709A SOT-23 TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.2 A ICM: Collector-base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0601A (2SD601A) Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0709A (2SB709A) Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XP04601 XP4601
Contextual Info: Composite Transistors XP04601 XP4601 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For general amplification 0.65 1 6 2 5 3 4 +0.05 0 to 0.1 2SD0601A(2SD601A) + 2SB0709A(2SB709A) 0.12 –0.02 0.9±0.1

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A
Contextual Info: Transistor 2SD0601A 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) Unit: mm +0.2 2.8 –0.3 Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage

sot 23 transistor

Contextual Info: 2SB709A SOT-23 Transistor PNP 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features — For general amplification — Complementary to 2SD601A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage

2SB0709A

Abstract: 2SB709A 2SC2404 XN04683 XN4683
Contextual Info: Composite Transistors XN04683 XN4683 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 3 2 0.50+0.10 –0.05 • 2SC2404 + 2SB0709A (2SB709A) Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open)

2SB709A

Abstract: 2SD601A XP1B301
Contextual Info: Composite Transistors XP1B301 Silicon PNP epitaxial planer transistor Tr1 Silicon NPN epitaxial planer transistor (Tr2) 2.1±0.1 0.65 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 2SB709A+2SD601A 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element ■ Absolute Maximum Ratings

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XN05601 XN5601
Contextual Info: Composite Transistors XN05601 XN5601 Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element Parameter Tr2 1.1+0.2 –0.1 2SB0709A(2SB709A) + 2SD0601A(2SD601A)

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XN04601 XN4601
Contextual Info: Composite Transistors XN04601 XN4601 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element Parameter 1.1+0.2 –0.1 2SD0601A(2SD601A) + 2SB0709A(2SB709A)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB709A SOT—23 TRANSISTOR（ PNP ） 1. BASE 2. EMITTER 3. COLLECTOR FEATURES ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter １．０ Power dissipation PCM : 0.2

2SD2458

Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
Contextual Info: • Silicon Small Signal Transistors Package No. S9TST0D Applica­ tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0709A (2SB709A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A
Contextual Info: Transistor 2SB0709A 2SB709A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm +0.2 2.8 –0.3 1.45 +0.1 +0.2 0.95 0.95 2.9 –0.05 3 2 Collector to base voltage VCBO –45 V Collector to emitter voltage

2SB0709A

Abstract: 2SB709A XN01401 XN1401
Contextual Info: Composite Transistors XN01401 XN1401 Silicon PNP epitaxial planer transistor Unit: mm For general amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SB0709A(2SB709A) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element

2SB0709A

Abstract: 2SB709A XP04401 XP4401
Contextual Info: Composite Transistors XP04401 XP4401 Silicon PNP epitaxial planer transistor Unit: mm For general amplification 1 6 2 5 3 4 0 to 0.1 2SB0709A(2SB709A) x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.

XP06401

Abstract: 2SB0709A 2SB709A XP6401
Contextual Info: Composite Transistors XP06401 XP6401 Silicon PNP epitaxial planer transistor Unit: mm For general amplification 1 6 2 5 3 4 0 to 0.1 2SB0709A(2SB709A) x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.

2SB709A

Abstract: 2SD601A XP1C301
Contextual Info: Composite Transistors XP1C301 Silicon PNP epitaxial planer transistor Tr1 Silicon NPN epitaxial planer transistor (Tr2) 2.1±0.1 0.65 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 2SB709A+2SD601A 0 to 0.1 ● • Absolute Maximum Ratings Parameter (Ta=25˚C)

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XN04601 XN4601
Contextual Info: Composite Transistors XN04601 XN4601 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 2 1 (0.65) 3 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • 2SD0601A (2SD601A) + 2SB0709A (2SB709A)

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XN0B301 XN1B301
Contextual Info: Composite Transistors XN0B301 XN1B301 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 5 1.50+0.25 –0.05 2 1 10˚ 1.1+0.2 –0.1 • 2SB0709A (2SB709A) + 2SD0601A (2SD601A) Parameter

XP2401

Abstract: 2SB709A
Contextual Info: Composite Transistors XP2401 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For general amplification 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 2SB709A x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element 0.12 – 0.02