2SD601A Search Results

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A
Contextual Info: Transistor 2SB0709A 2SB709A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm 0.40+0.10 ñ0.05 0.4±0.2 5° 1.50+0.25 -0.05 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and

transistor MAR 543

Abstract: 2SB709A 2SD0601A 2SD601A 2SB0709A
Contextual Info: Transistor 2SD0601A 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) Unit: mm 0.40+0.10 ñ0.05 • Features 5° 0.4±0.2 2.8+0.2 -0.3 1.50+0.25 -0.05 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0601A (2SD601A) Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0709A (2SB709A) Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XP04601 XP4601
Contextual Info: Composite Transistors XP04601 XP4601 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For general amplification 0.65 1 6 2 5 3 4 +0.05 0 to 0.1 2SD0601A(2SD601A) + 2SB0709A(2SB709A) 0.12 –0.02 0.9±0.1

2SD0601A

Abstract: 2SD1328 2SD601A XN04505 XN4505
Contextual Info: Composite Transistors XN04505 XN4505 NPN epitaxial planer transistor Unit: mm For general amplification (Tr1) For amplification of low frequency output (Tr2) +0.2 2.8 –0.3 +0.25 Tr1 Tr2 0.95 3 +0.1 +0.1 0.1 to 0.3 2SD0601A(2SD601A) + 2SD1328 0.4±0.2 1 : Collector (Tr1)

5H MARKING

Abstract: XP4501 2SD601A
Contextual Info: Composite Transistors XP4501 Silicon NPN epitaxial planer transistor Unit: mm For general amplification 1 6 2 5 3 4 0 to 0.1 2SD601A x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.

2SC3361-5

Abstract: 2SC181SL-O BFR41 L 2 KT3102 TEC9014B LOW-POWER SILICON NPN 2S0637 KT620A KT3102A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 - 1S - 20 2S 30 2SD601A 2S0637 2SC2000K 2SC2603 2SC147S KT620A HSE4S4 MPS-A09 KT3102A 2N4966 ~~~~~~ JE9214A TEC9014B MPSA09 MPSA09 MPSA09 2SC117S 2SC876 2SC876 ~~~~~ 2S01490 250789 BFT31 2NS310 TE01402A BFX68

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A
Contextual Info: Transistor 2SD0601A 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) Unit: mm +0.2 2.8 –0.3 Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage

sot 23 transistor

Contextual Info: 2SB709A SOT-23 Transistor PNP 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features — For general amplification — Complementary to 2SD601A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage

2SB709A

Abstract: 2SD601A XP1B301
Contextual Info: Composite Transistors XP1B301 Silicon PNP epitaxial planer transistor Tr1 Silicon NPN epitaxial planer transistor (Tr2) 2.1±0.1 0.65 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 2SB709A+2SD601A 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element ■ Absolute Maximum Ratings

2SD0601A

Abstract: 2SD601A XP04501 XP4501
Contextual Info: Composite Transistors XP04501 XP4501 Silicon NPN epitaxial planer transistor Unit: mm For general amplification 1 6 2 5 3 4 0 to 0.1 2SD0601A(2SD601A) x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.

2SD0601A

Abstract: 2SD601A XP06501 XP6501
Contextual Info: Composite Transistors XP06501 XP6501 Silicon NPN epitaxial planer transistor Unit: mm For general amplification 1 6 2 5 3 4 0 to 0.1 2SD0601A(2SD601A) x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XN05601 XN5601
Contextual Info: Composite Transistors XN05601 XN5601 Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element Parameter Tr2 1.1+0.2 –0.1 2SB0709A(2SB709A) + 2SD0601A(2SD601A)

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XN04601 XN4601
Contextual Info: Composite Transistors XN04601 XN4601 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element Parameter 1.1+0.2 –0.1 2SD0601A(2SD601A) + 2SB0709A(2SB709A)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0709A (2SB709A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A
Contextual Info: Transistor 2SB0709A 2SB709A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm +0.2 2.8 –0.3 1.45 +0.1 +0.2 0.95 0.95 2.9 –0.05 3 2 Collector to base voltage VCBO –45 V Collector to emitter voltage

2SD601A

Abstract: 2SD601AR 2SD601A-R 2SD601AS 2SD601AQ 2SD601A-Q marking code K code zr sot-23 marking ZR sot-23 marking ZS SOT-23
Contextual Info: 2SD601A 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High forward current transfer ratio hFE Low collector to emitter saturation voltage VCE sat

2SB709A

Abstract: 2SD601A XP1C301
Contextual Info: Composite Transistors XP1C301 Silicon PNP epitaxial planer transistor Tr1 Silicon NPN epitaxial planer transistor (Tr2) 2.1±0.1 0.65 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 2SB709A+2SD601A 0 to 0.1 ● • Absolute Maximum Ratings Parameter (Ta=25˚C)

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XN04601 XN4601
Contextual Info: Composite Transistors XN04601 XN4601 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 2 1 (0.65) 3 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • 2SD0601A (2SD601A) + 2SB0709A (2SB709A)

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XN0B301 XN1B301
Contextual Info: Composite Transistors XN0B301 XN1B301 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 5 1.50+0.25 –0.05 2 1 10˚ 1.1+0.2 –0.1 • 2SB0709A (2SB709A) + 2SD0601A (2SD601A) Parameter

2SD601A

Abstract: XP2501
Contextual Info: Composite Transistors XP2501 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For general amplification 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 2SD601A x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element 0.12 – 0.02

2SD601A

Abstract: XN1501
Contextual Info: Composite Transistors XN1501 Silicon NPN epitaxial planer transistor Unit: mm For general amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SD601A x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element 0.16 -0.06

XN01501

Abstract: XN1501 2SD0601A 2SD601A
Contextual Info: Composite Transistors XN01501 XN1501 Silicon NPN epitaxial planer transistor Unit: mm For general amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SD0601A(2SD601A) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element

XN2501

Abstract: 2SD601A
Contextual Info: Composite Transistors XN2501 Silicon NPN epitaxial planer transistor Unit: mm For general amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SD601A x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element 0.16 -0.06