270HZ Search Results

2sc2712

Abstract: C 029 Transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR „ 3 FEATURES 1 2 * High Voltage and High Current : VCEO=50V, IC=150mA Max. * Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE

Honda Connectors

Abstract: BHR-03VS-1 LMX1622-05-01 LMX1622-05-02 LMX1622-05-03 LXM1622-05-XX QZ-19-3F01 SM02
Contextual Info: A
 M I C R O S E M I RangeMAX LXM1622-05-xx DUAL 5W, DIGITAL DIMMING CCFL INVERTER MODULE C O M P A N Y P RELIMINARY D ATA S HEET The resultant “burst drive” that energizes the lamp was designed specifically to ensure that no premature lamp degradation occurs See the “How

Contextual Info: Transistor 2SD0637 2SD637 Silicon NPN epitaxial planer type For low-power general amplification Unit: mm 2.5±0.1 • Absolute Maximum Ratings Ratings Unit VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Peak collector current

KTC3198A

Abstract: 41BL
Contextual Info: SEMICONDUCTOR KTC3198A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES C A ・Excellent hFE Linearity : hFE 2 =100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N ・Low Noise : NF=1dB(Typ.). at f=1kHz.

Transistor hFE CLASSIFICATION Marking CE

Abstract: KTA2017 KTC4077 hFE CLASSIFICATION Marking CE hfe 300
Contextual Info: SEMICONDUCTOR KTC4077 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES E ・High Voltage : VCEO=120V. B M M ・Excellent hFE Linearity DIM A B C MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25 + _ 0.10 0.90 + ・Low Noise : NF=1dB Typ. , 10dB(Max.).

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A
Contextual Info: Transistor 2SB0709A 2SB709A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm 0.40+0.10 ñ0.05 0.4±0.2 5° 1.50+0.25 -0.05 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and

2SC400

Abstract: 8S040 Produced by Perfect Crystal Device Technology 2SC400 M
Contextual Info: 400 2SC 5 / U D > N P N X t :^ 2 / ^ W B h 5 > y ^ P C T Ä Ä SILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS) mmmcmuRj o o ' f * i-'srm o H ig h F re q u e n c y ° H ig h Sp eed • h •? -y ^ . m A m p lifie r S w itc h in g y • v 1- y • * 4 •

2SC1815

Abstract: 2SC1815GR 2SC1815-GR 2SC1815Y 2sc1815 transistor 2SC1815-Y asC1815 2SC18150 lbfb 2SC1815Y GR
Contextual Info: 2s c 1815 ' 'n y N P N x ^ s > ^ m B h ^ y V Ä 5> P C T m ILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS Unit in mm o o General Purpose Transistor and Versatile Utility in both RF, AP Applications. MAXIMUM EATINGS CHARACTERISTIC (Ta = 2 5 BC) RATING SYMBOL

Contextual Info: UTC 79LXX LINEAR INTEGRATED CIRCUIT 3-TERMINAL 0.1A NEGATIVE VOLTAGE REGULATOR SOP-8 DESCRIPTION The UTC 79LXX family is monolithic fixed voltage regulator integrated circuit. They are suitable for applications that required supply current up to 100mA. 1 TO-92

UMT222A

Abstract: TRANSISTOR 1P transistors marking 1p BC847B BC857B MMST2222A PN2222A T116 B128D MARKING 5D NPN
Contextual Info: BC847B Transistors NPN General Purpose Transistor BC847B zExternal dimensions Unit : mm zFeatures 1) BVCEO < 45V (IC=1mA) 2) Complements the BC857B. 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zPackage, marking, and Packaging specifications Packaging type SST3 Marking

U232p9

Abstract: UPS APC CIRCUIT future scope of wireless charger mba mini projects APC UPS repair 220V ac to 9V dc converter circuit APC smart 1000 ups low cost mini project simple make protect apc smart ups 1000 9053-0000
Contextual Info: FIS HAND HELD MINI-OTDR FIS MINI-OTDR FEATURES NEW LOWER PRICE! TEST EQUIPMENT stry • Lowest Cost Multi-Wavelength OTDR in the Indus Industry • Small and Lightweight Hand Held Case • One Button Scan • Data Storage and Data Download up to 255 Traces

KTA1504S

Abstract: KTC3875S
Contextual Info: SEMICONDUCTOR KTC3875S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Excellent hFE Linearity 2 A 700. 3 G High hFE : hFE=70 D : hFE 0.1mA /hFE(2mA)=0.95(Typ.). H Low Noise : NF=1dB(Typ.), 10dB(Max.).

lxm1612xxxx

Abstract: Honda Connectors BHR-03VS-1 LMX1622-05-01 LMX1622-05-02 LMX1622-05-03 LXM1622-05-XX QZ-19-3F01 SM02 5422K
Contextual Info: A
 M I C R O S E M I RangeMAX LXM1622-05-xx DUAL 5W, DIGITAL DIMMING CCFL INVERTER MODULE C O M P A N Y P RELIMINARY D ATA S HEET The resultant “burst drive” that energizes the lamp was designed specifically to ensure that no premature lamp degradation occurs See the “How

20 pin TFT fujitsu

Abstract: NL10276AC30 nec tft display module NL10276AC30-04E DOD-H-7242
Contextual Info: NEC TFT COLOR LCD MODULE Type: NL10276AC30-04E 38cm 15 Type , XGA SPECIFICATIONS (First Edition) Preliminary All information in this document is subject to change without prior notice. NEC Corporation Display Device Operations Unit Color LCD Division Application Engineering Department

Contextual Info: Composite Transistors XN0C301 XN1C301 Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● 2 2.8+0.2 –0.3 5 5˚ Two elements incorporated into one package. (Tr1 base is connected to Tr2 emitter.)

HHM290

Contextual Info: omega.com OMEGAnet OnLine Service www.omega.com Benelux: Internet e-mail info@omega.com One Omega Drive, Box 4047 Stamford, CT 06907-0047 Tel: 203 359-1660 e-mail: info@omega.com Canada: 976 Bergar Laval (Quebec) H7L5A1 Tel: (514) 856-6928 e-mail: info@omega.ca

Vce-12V

Abstract: 2SC2310 ta7200
Contextual Info: ST 2SC2310 NPN Silicon Epitaxial Planar Transistor low frequency ,low noise amplifier . The transistor is subdivided into two groups B and C according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

MMBTSC3875

Contextual Info: MMBTSC3875LT1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC Symbol

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC4077 EPITAXIAL PLANAR NPN TRANSISTO R LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : VCeo=120V. • Excellent hFF Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High hFE : hFE=200~700. • Low Noise : NF=ldB(Typ.), 10dB(Max.).

KTA2014F

Contextual Info: SEMICONDUCTOR KTC4075F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E ・Excellent hFE Linearity B : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=70~700. D 3 K ・Complementary to KTA2014F.

KTA1504

Abstract: KTC3875
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3875 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES DIM A B C D E G H J K L M N P • Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High Iife : h FE = 70 ~ 7 0 0.

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XP04601 XP4601
Contextual Info: Composite Transistors XP04601 XP4601 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For general amplification 0.65 1 6 2 5 3 4 +0.05 0 to 0.1 2SD0601A(2SD601A) + 2SB0709A(2SB709A) 0.12 –0.02 0.9±0.1

transistor 131 8D

Abstract: TRANSISTOR 8d
Contextual Info: BC858BW / BC858B Transistors PNP General Purpose Transistor BC858BW / BC858B !External dimensions Units : mm !Features 1) BVCEO < -30V (IC=-1mA) 2) Complements the BC848B / BC848BW. BC858BW 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 BC858B Pakaging type UMT3 G3K

AN7086S

Contextual Info: ICs for Cassette, Cassette Deck AN7086S Recording/Playback Pre-/Power Amplifier IC for 3V Microcassette • Overview Unit : mm 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 0.3 7.2±0.3 9.4±0.3 2.0±0.2 0.15 0.925 1.27 0.1±0.1 circuit 15.3±0.3