Transistor hFE CLASSIFICATION Marking CE
Abstract: KTA2017 KTC4077 hFE CLASSIFICATION Marking CE hfe 300
Contextual Info: SEMICONDUCTOR KTC4077 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES E ・High Voltage : VCEO=120V. B M M ・Excellent hFE Linearity DIM A B C MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25 + _ 0.10 0.90 + ・Low Noise : NF=1dB Typ. , 10dB(Max.).
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ktc4077kta2017transistor hfe classification marking cehfe classification marking ce+1hfe 300
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Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC4077 EPITAXIAL PLANAR NPN TRANSISTO R LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : VCeo=120V. • Excellent hFF Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High hFE : hFE=200~700. • Low Noise : NF=ldB(Typ.), 10dB(Max.).
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Contextual Info: SEMICONDUCTOR KTC4077 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES 2008. 8. 29 Revision No : 3 1/2
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KTA2017
Abstract: KTC4077 Transistor hFE CLASSIFICATION Marking CE
Contextual Info: SEMICONDUCTOR KTC4077 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES E ᴌHigh Voltage : VCEO=120V. B M M ᴌExcellent hFE Linearity DIM A B C MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25 + _ 0.10 0.90 + ᴌLow Noise : NF=1dB Typ. , 10dB(Max.).
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KTC4077
Contextual Info: SEMICONDUCTOR KTC4077 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 D6 1 2 Item Marking Description Device Mark D KTC4077 hFE Grade 6 6, 8 * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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WPD500
Abstract: KTA2017 KTC4077
Contextual Info: KEC SEMICONDUCTOR TECHNICAL DA TA KOREA ELECTRONICS CO.,LTD. KTC4077 EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : Vceo=120V. • Excellent Ii f e Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High hFE • hFE=200 ~ 700.
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KTA2017
Abstract: KTC4077 e6v1
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC4077 EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : V Ceo =120V . • Excellent hFF Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High hFE : hFE=200~700. • Low Noise : NF=ldB(Typ.), 10dB(Max.).
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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hig86-755-3679515alternator diode 1776 b2az marking transistor sot-23smd sot23 transistor mark y2+7ic mb4213nec 12f triacf10p048ktc3114 equivalentsmd transistor marking 02ndiode pj 57 ss14bc517 equivalent
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khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2n2904ebc859kds135s2n2906e+16bc860kac3301qnkds1602n3904bcv71kdb2151ekhb*9d5n20pkhb9d0n90n6v zener diodekhb*2d0n60ptransistorkhb7d0n65fbc557 transistorkia*278r33pikhb9d0n90n circuitktd998 transistor
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KTA2017
Abstract: KTC4077
Contextual Info: KEC SEMICONDUCTOR KTA2017 TECHNICAL DA TA KOREA ELECTRONICS CO.,LTD. EPITAXIAL PLANAR PNP TRA N SISTO R LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : V ceo=-120V. • Excellent Ii f e Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High hFE: hFF=200~700.
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LM8550
Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo
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2n2222/aktn2222/a2sa1150kta1272+162sa15102sb546a2n2369/aktn2369/a2sa1151kta1266lm8550ktd20262sc2320 equivalentnec 12f datasheet2n3904 motorola2sc2240 equivalent2n3906 motorola2sc19832n5400 motorola2sd1960
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KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2n2904ebc859kds135s2n2906e+16bc860kac3301qnkds1602n3904bcv71kdb2151ekia78*pitransistorkia78*ptransistor 2n3904khb*9d5n20pkhb9d0n90nkid65004aftransistor mosfetkia7812apikhb*2d0n60p
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KTA2017
Abstract: KTC4077
Contextual Info: SEMICONDUCTOR KTA2017 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES E ・High Voltage : VCEO=-120V. B M M ・Excellent hFE Linearity DIM A B C MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25 + _ 0.10 0.90 + ・Low Noise : NF=1dB Typ. , 10dB(Max.).
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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mn1280kgt50n60kdabc547 smd transistorkia1117af+6transistor smd zgy6 smd transistormb4213y4 smd transistorsmd transistor zaakgt25n120nda
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MB4213
Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Contextual Info: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors
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ssip-12kia6283kkia7217apssip-10+13kia6240kkia6801kkia6901p/fmb4213f10p048mn1280mb4213 equivalentsmd transistor zaadiode zener zd 15ic mb4213transistor 2ax smd252 b34 smd zener diodebc237 equivalent smd
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KTA2017
Abstract: KTC4077
Contextual Info: SEMICONDUCTOR KTA2017 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES E ・High Voltage : VCEO=-120V. M B M ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). D 3 1 G ・High hFE: hFE=200～700. J A 2 ・Low Noise : NF=1dB(Typ.), 10dB(Max.).
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Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA2017 EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : V ceo=_120V. • Excellent Iif e Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High Iife- 1ife=200~700. • Low Noise : NF=ldB(Typ.), 10dB(Max.).
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KTA2017
Abstract: KTC4077
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA2017 EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : V ceo=_120V. • Excellent Iif e Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High Iife- 1ife=200~700. • Low Noise : NF=ldB(Typ.), 10dB(Max.).
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