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Contextual Info: HOE D ROHM CO LTD n □ □ □ ¿ b lS S BBRHM 2SB1306/2SB1307M/2SB1326/2SB1386 /T ra n s is to rs 7^27-21 S B 1 3 S / 2 S B 1 3 7 2 S 3 1 3 2 3 / 2 5 3 1 3 S S 7 tl7 - Z IV 3 VhJJVSVvJI-r 2 m m m t i m m m / L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistors
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2SB1306
Abstract: 2SB1307M
Contextual Info: h "7 > V ^ £ /Transistors 2SB1306/2SB1307M/2SB1326/2SB1386 2 S B 1 3 0 6 /2 S B 1 3 0 7 M 2 S B 1 3 2 6 /2 S B 1 3 8 6 P N P '> U = l> h 7 > y ^ ^ Freq. Power Amp. Epitaxial Planar PNP Silicon Transistors • • ^ ii'T iilll/D im e n s io n s Unit: mm
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2sb1306/2sb1307m/2sb1326/2sb13862sb13062sb130tm2sb1326+22sb1386tors2sb1307m
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B1307M
Abstract: j 6810 J 6810 D 2SB1306 b1306 1307M 2SB1307 2SB1307M sb1306 B-1306
Contextual Info: /Transistors 2SB1306/2SB1307M/2SB1326 2S B 1306/2S B 1307M 2SB 1326 Epitaxial Planar PNP Silicon Transistors Freq. Power Amp. • • « Ä 1 VCE sat| £ ( - 7 fi\n i@ 2SB1306 /D im e n s io n s 5.a±0.2 ( U n it: m m ) 2SB 1307M 4.810.? V cE (sa t)= —0.35V (Typ.)
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2sb1306/2sb1307m/2sb13261306/2s1307m2sb1306+92sb1326b1307mj 6810j 6810 db13062sb13072sb1307msb1306b-1306
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C2021M
Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)
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2sc2021ljne2sb8212sa937aln\2sc2021ln+162sb12762021m2sa937am2sb7372sd7862sa1137c2021mb1568mosfet ftr 032sc1b152sa1904mosfet ftr 03-e2sc2021e2sc1740 transistor2sk22952s0240
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2SB1328
Abstract: 2SD2008 2SB1329 2SD2010 2SB1041 2sd2172 2SD1929 2SB1425 2SA1861 2SB1306
Contextual Info: Transistors TO-92L •T0-92LS • MRT TO-92L is a high power version of TO -92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Package Application TO-92L I T0-92LS | MRT Part Nò.
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o-92lt0-92lso-92ls2sa1819+102sb13282sd20082sb13292sd20102sb10412sd21722sd19292sb14252sa18612sb1306
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2SB1013
Abstract: 2S897 2SB1315 2SA1307 2SB1306 2sb631 hitachi 2SB747 2SA1431 1318J 2SB679
Contextual Info: € Type No. it € Manuf. m = SANYO 3? £ TOSHIBA 2SB679 a NEC SL HITACHI M ± ii FUJITSU & T MATSUSHITA 2SB 1286 ^ □ — A 2SB884 2SB 1287 □ — A 2SB1226 2SB 1288 2SB1131 2SA1431 2SB 1 289 fc' T □ — A 2SB920L 2SB753 2SB946 2SB 1290 _ □ — A 2SB1018
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2sb8842sb6792sb11052sb949+142sb12262sb14022sb949a2sb11312sa14312sb11172sb10132s8972sb13152sa13072sb13062sb631 hitachi2sb7471318j
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2SD2008
Abstract: 2SD2006 transistor 2SD2006 2Sb1333 2SD2010 2SB1482 2SB1515 2SB1306 transistor 2SD2004 2SB1331
Contextual Info: Transistors TO-92L • T0-92LS • MRT TO-92L is a high power version of TO -92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Pc W (T a = 2 5 °C ) P a ckage Application
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o-92lt0-92lso-92ls2sa1819+102sd20082sd2006transistor 2sd20062sb13332sd20102sb14822sb15152sb1306transistor 2sd20042sb1331
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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2SD1929
Abstract: 2SD2172 2sd1930 2SB1425 2SA1780 2SB1041 2SD2159 2SA1482 2SB1256 2SD2007
Contextual Info: ¡TÏÏTÏÏÏ1 T r an s i s t o r s • TO-92L, MRT Types Type Function It: u 1. A -32 1 -2 0.75 1.2 82 - 390 Ver ( V ) -3 -80 0.7 . 0.75 1.2 82 - 390 -3 -100 -32 2 -3 -80 -1 2SB1329 2SA935 2SB1330 2SB1010 2SB1331 2SB1041 2SB1332 -50 -1 -1 5 2SB1043 2SB1212
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o-92l2sa9342sa9352sb1010+132sb10412sb10432sb12122sb14252sc20602sd19292sd21722sd19302sa17802sd21592sa14822sb12562sd2007
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2SC1740 transistor
Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN
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2sc2021ln2sb8212sb12762sc2021mln+16o-92lo-92ls2sb737v2sd7862sa11372sc17402sc1740 transistora1757b1130am2sd2061f2sd14662sc5083b1236amos-fet darlington2sc4721transistor 2sa1819
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2SB1436
Abstract: 2SB1306
Contextual Info: Transistors Low Frequency Transistor 20V, 5A 2 S B 1 3 8 6 /2 S B 1 4 1 2 /2 S B 1 3 2 6 /2 S B 1 4 3 6 •Fe a tu re s 1) ^External dimensions (Units: mm) LOW VcE(sat). V C E(sal) = -0.35 V (Typ.) (Ic / I b = -4 A / -0 .1 A ) 2) Excellent DC current gain charac
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2sb13862sb14122sd2098/2sd2118/2sd2097/2sd2166+6sc-63sc-622sb13262sb143665max2sb1306
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59
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2SD2159
Abstract: 2SD2421 2SB1485 2SB1333 2sd2061 2sc2021qrs 2SD2172 2sD2388 DARLINGTON RF
Contextual Info: b? > > 7 . $ / 7 ransistors / \ ’ y L i s t 4 — o f y P B i J K r o d u c t s S i - l l * f o r E a c h 2 S P A / b a c k a g / c e / d í í ( 2 S < A ~ / B f / C / D T y p e ) • SPT Part No. Application VcEO(V) lc(A) lc Max-(A) 2SA825S Low Noise
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2sa825s2sa830s2sa854s2sa933as+152sa933asln2sa1198s2sa1199s2sa1515s2sa1585s2sc1645s2sd21592sd24212sb14852sb13332sd20612sc2021qrs2sd21722sd2388darlington rf
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Nec K 872
Abstract: 2SA1184 2SB1306 2SB1479 2SA1015 2SB873 2SB1086 2SB548 2SB1480 2sb601
Contextual Info: 55 - s « T y p e No. tt € Manuf. m = SANYO JÎÏ TOSHIBA m a NEC ÍL S HITACHI Ä ± àfi F U JITSU fâ T MATSUS H I T A ^ ü MITSUB I S H I □ — A ROHM 2 SB S58 ÎL 2SB824 2SB596 2SB703 2SB942 2SB1334 2SB 859 îl 2SB920 2SB595 2SB703A 2SB942A 2SA1634
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2sb8242sb5962sb7032sb942+162sb13342sb9202sb5952sb703a2sb942a2sa1634nec k 8722sa11842sb13062sb14792sa10152sb8732sb10862sb5482sb14802sb601
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transistor A1515
Abstract: Transistor 2SA 2SB 2SC 2SD d2172 a1515 transistor transistor D1292 h7195 rkm 34 transistor C1741A IC TB 1238 AN transistor b1184
Contextual Info: Explanations • Standard Products, Semi-standard Products, Custom Products To make it easier for the customer to select the type of product best suited to his needs, we offer transistors, diodes, light-emitting diodes sensors, lasers diodes, and resistors in three types: 1 standard, (2) semi-standard, and
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mcr01transistor a1515transistor 2sa 2sb 2sc 2sdd2172+7a1515 transistortransistor d1292h7195rkm 34 transistorc1741aic tb 1238 antransistor b1184
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2SC2030
Abstract: OTB-122 28C32 DTD143EF DTC143EVA BUK 155 DTD114EF 2SC337 2SD18 TV6,5
Contextual Info: The Class and Basic Ordering Units for Standard and Semi-standard Products To make it easier for the customer to select the type of product best suited to specific applications, we offer transistors in three types : 1 standard, (2 ) semi Package FTR 2SA785
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1k--10k1k--20kdt3c144wdt5a113z+16dt5a114edt5a124edt5a143edt5a143tdt5a143xdt5a144e2sc2030otb-12228c32dtd143efdtc143evabuk 155dtd114ef2sc3372sd18tv6,5
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Mosfet FTR 03-E
Abstract: mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337
Contextual Info: h 7 > y ^ £ / T ra n sisto rs h 7 > v * £ IÜ á q — J W / T r a n s is t o r s S u m m a ry • POWER MOSFET Application Part No 2SK1976 V dss V 2SK2176 Package Typ (Q ) V gs (V) Page Id (A) 450 5 30 1.0 10 2.5 TO-220FP 88 60 10 30 0 08 10 5 TO-220FP
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2sk19762sk20952sk2176o-220fp+142sa7852sa7902sa790m2sa806mosfet ftr 03-emt 1389 fe2sd122dtc144gslow noise darlington transistordtc114evadtc143efv/65e9 transistortransistor2sc337
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RCM2008R
Abstract: 1SS299 bu24204 RCM2027 BA3422S BA843 BA6490FS da119 k2 BA6404 BA857
Contextual Info: 87 87 87 87 87 88 88 88 88 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 90 90 90 87 87 87 87 87 87 86 86 86 86 88 88 88 88 88 88 88 88 88 88 88 88 88 88 88 88 86 86 86 86 86 87 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 87 86 86 86 88 88
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2n39062n39462n39472n4059+16n40602n40612n40622n41232n41242n4125rcm2008r1ss299bu24204rcm2027ba3422sba843ba6490fsda119 k2ba6404ba857
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2SA101S
Abstract: 2SA933LN 2SA970 2sa977 2SB927 2SA562TM 2SA914 2SA1783 2SA1232 Toshiba 2SB754
Contextual Info: - m « Type No. a € Manuf. s -E SANYO TOSHIBA 2SA 1124 fé T 2SA 1125 . të T 2SA 1127- fé T 2SA1783 2SA1015 2SA 1128 K T 2SB698 2SA562TM 2SA 1129 a a 2SB919 2SB1018 2SA 1133 „ fâ T 2SA1208 S ÍL HITACHI # ± ¡I FUJITSU T MATSUSHITA 2SB921L 2SA933LN
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2sa12082sa13202sa14822sa1360+112sa9142sa17832sa101s2sa933ln2sb6982sa562tm2sa9702sa9772sb9272sa1232toshiba 2sb754
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2SA1482
Abstract: 2SD2008 2SA1903 2SD2010 2sc4722 2SD2005 2SA1861 2sa1820 2Sb1333 2SB1374
Contextual Info: _ . . • Transistors 7028*^ DQQ7M31 TbT ■ R H M T0-92L •T0-92LS •MRT TO-92L is a high power version of TO-92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Pc W (Ta=25*C )
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dqq7m31t0-92lt0-92lso-92l+11o-92ls2sa14822sd20082sa19032sd20102sc47222sd20052sa18612sa18202sb13332sb1374
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2SB1333
Abstract: 2SD2006 2SD2005 2SD2010 2SD2008 2SA1861 2SD2011 2SB1306 2sd2159 2SB1482
Contextual Info: Transistors TO-92L •T0-92LS • MRT TO-92L is a high power version of TO -92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Package Application T0-92L I T0-92LS | MRT Part Nò.
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o-92lt0-92lso-92ls2sa1819+102sb13332sd20062sd20052sd20102sd20082sa18612sd20112sb13062sd21592sb1482
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2SD1966
Abstract: 2SD1255M 2SB maintenance IMB6 2SC2808
Contextual Info: h -7 > y 7, $ /Transistors h z 7 > y Z $ $ H n h —W h 7 > y ^ ^ i p n — f t ü / T r a n s is t o r s Summary • h 7 v 3. $ /Transistors 2SA/2SB/2SC/2SC/2SD Type V ceo (V ) fT(M H z) Cob(pF) hFE Package Page 6.5 82-390 FTR 75 Icm - 1 .5 A 300 200 5.5
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2sa7852sa7902sa790m2sa806+112sa8212sa8252sa825s2sa832sa830s2sa8542sd19662sd1255m2sb maintenanceimb62sc2808
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SC1741
Abstract: 2SD2172 gy-80 DTA144EF DTC123JF DTA143ZF 2sc2062c DTD143EF DTD114EF DTC144EL
Contextual Info: S -y y y X £ /Transistors h ^ > y ^ ^ S f nnp l C O i'T i975^Â> e h ^ v ^ r o n u g i i a f é L S : u f c ^ , SiÎD0n ^ iC Î, / : - a r ii? ÎÇ l; ÎD ^ | lr o c r ^ ig Î5 f e l U L , Ä S l í J f A í í ' r y O W r t ik • SPT 4 ± 0 .2 2 .0 ± 0 .2
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sip10801bx100nd022-01dd022-01+11dd92l-01sc17412sd2172gy-80dta144efdtc123jfdta143zf2sc2062cdtd143efdtd114efdtc144el
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2SB1482
Abstract: 2SC4722 2sa1820 2SD2172
Contextual Info: Transistors TO-92L • TO-92LS • MRT TO-92L is a high power version of TO-92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. P a ckage A pplication TO-92L TO-92LS MRT Part No.
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o-92lo-92ls-92ls5k10k+42sb14822sc47222sa18202sd2172
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