2SA854S Search Results

Contextual Info: 2SC1741S Transistor, NPN Features Dimensions Units : mm • available in SPT (SC-72) package • large collector current: lc = 500 mA • low collector saturation voltage, which allows low-voltage operation • complementary pair with 2SA854S 2SC1741S (SPT)

2SA1036K L T146

Contextual Info: Transistors Medium Power Transistor -32V, - 0.5A 2SA1036K/2SA1577/2SA854S •External dimensions (Units: mm) 2SA1577 2SA1036K 1 1+0.2 ; -0;1 [0.&SQ.95] 0 .8 ± 0 .1 U (ß 1.3±0.1 f 1 0.65 0 65 y fa +J i! (3)01 _ •Structure Epitaxial planar type PNP silicon transistor

transistor bf 194

Abstract: 2SA854S 7430 7439 bf 194 datasheet 7430
Contextual Info: SPICE PARAMETER 2SA854S by ROHM TR Div. * 2SA854S PNP BJT model * Date: 2006/12/05 .MODEL 2SA854S PNP + IS=60.000E-15 + BF=194.09 + VAF=31.854 + IKF=1.9855 + ISE=60.000E-15 + NE=1.4487 + BR=8.8685 + VAR=100 + IKR=59.046E-3 + ISC=60.100E-12 + NC=1.7430 + NK=1.0032

TRANSISTOR 246

Abstract: 2SC1741S 2SC4097 "Power transistor" 2SC24 NPN Silicon Epitaxial Planar Transistor 2SA1036K 2SA1577 2SA854S 2SC2411K
Contextual Info: Transistors Medium Power Transistor 32V, 0.5A 2SC2411K / 2SC4097 / 2SC1741S FFeatures 1) High Ic(Max.) IC(Max.) = 0.5A 2) Low VCE(sat). Ideal for low voltage operation. 3) Complements the 2SA1036K / 2SA1577 / 2SA854S. FExternal dimensions (Units: mm) FStructure

C1741S

Abstract: 2SAB54S 2SAB54
Contextual Info: 2SA854S Transistor, PNP Features Dimensions Units : mm available in S P T (SC -72) package 2SAB54S (SPT) large co lle ctor current -500 mA C(max) 1 • suitable fo r low -voltage operation because of its low saturation voltage • com plem entary pair w ith 2 S C 1 741S

c102 TRANSISTOR

Abstract: 2N3904 A41 transistor c102 c101 TRANSISTOR TRANSISTOR 246 transistor c101 2n2222+331+transistors 2SC4043 TRANSISTOR 618 609 transistor
Contextual Info: Transistors Medium Power Transistor *32V, *0.5A 2SA1036K / 2SA1577 / 2SA854S FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FExternal dimensions (Units: mm) FStructure

2SA1036K

Abstract: 2SA1577 QR 2SA1577 2SA854S 2SC1741S SC-72
Contextual Info: 2SC1741S Transistors Medium Power Transistor 32V, 0.5A 2SC1741S zExternal dimensions (Units : mm) 2SC1741S 2±0.2 3Min. 3±0.2 4±0.2 (15Min.) zFeatures 1) High ICMax. ICMax. = 0.5A 2) Low VCE(sat). Optimal for low voltage operation. 3) Complements the 2SA1036K / 2SA1577 / 2SA854S.

Contextual Info: Transistors Medium Power Transistor -32V, - 0.5A 2SA1036K/2SA1577/2SA854S •F e a tu re s IcMax. = - 5 0 0 m A 2) • E x t e r n a l d im e n s io n s (U nits: m m ) L a rg e lc. 2SA1577 2SA1036K L o w VcE(sat). O p tim a l f o r lo w - v o lt'¿±0.1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SA854S TRANSISTOR PNP 1. EMITTER FEATURES z Large IC. z Low VCE(sat). Idea for Low-voltage Operation. z Complements the 2SC1741S. 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2sa854

Abstract: A854
Contextual Info: h7 > y 2 S A 2SA854/2SA854S £ /Transistors -f M pnp 8 5 4 Î'^ ^ J iif i/ M e d iu m Power Amp. Epitaxial Planar PNP Silicon Transistors • • 4$« Dimensions Unit: mm 1) lc Max.= —500m At±?i,'o 2) V CE (sa.) « M S < 1CJ 1 1/ T i ' 5. 3) 2 S C 1 7 4 1 , 2 S C 1 7 4 1 S t = l > y i J 0

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SC1741S TRANSISTOR NPN 1. EMITTER FEATURES z High IC z Low VCE(sat). Optimal for Low Voltage Operation z Complements the 2SA854S 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2sa899

Abstract: 2SC1904 2SA904A 2SA933LN 2sc2673 2SA898 2SA887 2SA881 2SA93 2sc1846
Contextual Info: - 16 - Ta=25£C, *EP(âTc=25t M 2SA847A 2SA854 2SA854S 2SA872 2SA872A 2SA874 2SA874M 2SA879 2SA881 2SA885 2SA8S6 2SA887 2SA893 2SA893A 2SA898 2SA899 2SA900 2SA904A 2SA913 2SA913A 2SA914 2SA915 2SA916 2SA921 2SA929 2SA930 2SA933 2SA933LN 2SA 933S 2SA933SU

Contextual Info: Transistors Medium Power Transistor *32V, *0.5A 2SA1036K / 2SA1577 / 2SA854S FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FExternal dimensions (Units: mm) FStructure

transistor 206

Abstract: 2SA1036K 2SA1577 500ma pnp AS 205 transistor "Power transistor" 2sa157 ic 204 transistor 2SA854s 2SA854S
Contextual Info: Transistors Medium Power Transistor *32V, *0.5A 2SA1036K / 2SA1577 / 2SA854S FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FExternal dimensions (Units: mm) FStructure

2sa854

Abstract: 2SA854 Q
Contextual Info: h7 > v £ /Transistors 2SA854 2SA854S 2SA854/2SA854S I t ^ ^ V 7 ^ 7 sU - t ^ P N P ' > U = I > h 7 > y ^ ^ Epitaxial Planar PNP Silicon Transistors 4JE|^3*i,lli/M e d iu m Power Amp. • i1-Jfi'iJ-/i[§]/’Dim nsions Unit : mm • 1#* 1) lc Ic Max. = —500mA

A854S

Contextual Info: Transistors Medium Power Transistor -32V, - 0.5A 2SA1036K/2SA1577/2SA854S • F e a tu re s 1) •E x te rn a l dim ensions (Units: mm) Large lc. Icmbx, — —500mA 2SA1577 2SA1036K 2) Low VcEisat). O p tim a l fo r lo w -v o ltage operation. 3) Com plem ents the 2SC 2411K/

Contextual Info: ROHM CO LT» MOE 7 0 S f i cl cH » □ □ □ S 3 ci 4 f ' 7 > y X $ / T ransistors IRHfl 4 2SA854/2SA854S 7 ^ 2 7 -0 9 2SÄ354 0€£ K>1 Z ö M ö 5 4 « X t f ^ d e v y ; U 7 ° U - ^ P N P v U 3 > h 7 > v X $ Power Amp. Epitaxial Planar PNP Silicon Transistors

2SA854S

Abstract: 2SC1741S SC-72 T146
Contextual Info: 2SA854S Transistors Medium Power Transistor -32V, -0.5A 2SA854S zExternal dimensions (Unit : mm) zFeatures 1) Large IC. ICMAX. = -500mA 2) Low VCE(sat). Idea for low-voltage operation. 3) Complements the 2SC1741S. 2SA854S 4 ±0.2 (15Min.) 3Min. 3 ±0.2 2 ± 0.2

Contextual Info: Transistors Medium Power Transistor 32V, 0.5A 2SC2411K/2SC4097/2SC1741S •F e a tu re s 1) High IcMax. IcMax. = 0.5mA 2) Low VcE(sat). O ptim al fo r low v o lt­ age operation. 3) Complements the 2SA1036K/2SA1577 / 2SA854S. •E x te rn a l dimensions (Units: mm)

2SA series

Abstract: 2SC1740S TO-92
Contextual Info: Bipolar transistors-2SA series TO-92 and SPT summary Table 3 TO-92 and SPT general use transistors Package Appli­ cation Ir- ^C max RC V CEO *V CES (V ) (mA) 2SA933AS -5 0 -1 5 0 300 2SC1740S 50 150 2SC2389S 120 2SA854S SPT T O -9 2 (mW ) h FE h FE ranking

SS2205

Abstract: 2SA1628 2SB814 HSI 527 2SA1284 2SA1178 2SA1283 2SA1586 2SB1043 2SA934
Contextual Info: 33 tt « Manuf. ft 3 SANYO M TOSHIBA m « T y p e No. o a ED - ±L HITACHI S ± FUJITSU 35 ta T DTA123YS 1505 n m w * 2SA 1506 m w m ,^ 2SA 1 507 , 2SA 1508 2SA 1509 2SA 1510 ' 2SA 1511 /• = ft 2SA 1512 & T 2SA 1 5 1 3 -■ a 2SA 1514 □ - A 2SA1257 2S A 1 1 6 3

2SD1960

Abstract: 2SD1468 2SB737 L120A 2SC1740 transistor 2SD786 2SD786S 2SC1740SLN 2SA933A 2SC2808
Contextual Info: Transistors TO-92 •SPT TO-92 and its smaller version, the SPT transistors, have conventional leads that fit into PWB mounting holes. Ammo box taped packaging for automated insertion is standard packaging, however, bulk is also available. Package Application

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

2SA1036K

Abstract: 2SA1577 2SA854S 2SC1741S 2SC2411K 2SC4097 SC-72 T146
Contextual Info: 2SC2411K / 2SC4097 / 2SC1741S Transistors Medium Power Transistor 32V, 0.5A 2SC2411K / 2SC4097 / 2SC1741S !External dimensions (Units : mm) 2SC2411K 2SC4097 1.1+0.2 −0.1 1.9±0.2 2.0±0.2 0.8±0.1 2.8±0.2 (3) (3) !Structure Epitaxial planar type NPN silicon transistor