2SC1980
Abstract: TRANSISTOR 2SC1980 2SA921
Contextual Info: Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SA921 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings Ta=25˚C Parameter
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2SA921
Abstract: 2SC1980 2SA0921 2SC198
Contextual Info: Transistors 2SA0921 2SA921 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV 0.7±0.2
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2SA0921
Abstract: 2SA921 2SC1980 TRANSISTOR 2sc1980
Contextual Info: Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SA0921 2SA921 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings (Ta=25˚C)
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2SA0921
Abstract: 2SA921 2SC1980
Contextual Info: Transistor 2SA0921 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings (Ta=25˚C)
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2SA0921
Abstract: 2SA921 2SC1980
Contextual Info: Transistors 2SA0921 2SA921 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV 0.7±0.2 • Features
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2SA921
Abstract: 2SA92 2SC1980 2SC198
Contextual Info: Transistor 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings Ta=25˚C Parameter
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Contextual Info: Transistors 2SA0921 2SA921 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 5.1±0.2 M Di ain sc te on na tin nc ue e/ d 5.0±0.2 d p lan inc ea se ed lud p lan m m es ht visi
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Contextual Info: Transistors 2SA0921 2SA921 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV 0.7±0.2
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2SA0921
Abstract: 2SA921 2SC1980
Contextual Info: Transistor 2SA0921 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 5.0±0.2 • Absolute Maximum Ratings 0.7±0.1 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage
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2sa899
Abstract: 2SC1904 2SA904A 2SA933LN 2sc2673 2SA898 2SA887 2SA881 2SA93 2sc1846
Contextual Info: - 16 - Ta=25£C, *EP(âTc=25t M 2SA847A 2SA854 2SA854S 2SA872 2SA872A 2SA874 2SA874M 2SA879 2SA881 2SA885 2SA8S6 2SA887 2SA893 2SA893A 2SA898 2SA899 2SA900 2SA904A 2SA913 2SA913A 2SA914 2SA915 2SA916 2SA921 2SA929 2SA930 2SA933 2SA933LN 2SA 933S 2SA933SU
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ta-25t2sa847azsa8542sa854s+162sa8722sa872a2sc19802sa9212sa9292sa9302sa8992sc19042sa904a2sa933ln2sc26732sa8982sa8872sa8812sa932sc1846
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337 transistor
Abstract: 2SC1980 2SA921 Gv-80dB
Contextual Info: Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SA921 Unit: mm 5.0±0.2 4.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. 0.7±0.2 ● • Absolute Maximum Ratings
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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stvdst-01cat22stk411-230estk411-220e+8stk442-130pal005aupc2581vfn1016strg6153rsn313h25stk407-070bmcz3001d
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K 2411
Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type
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3sk241t0220fk 2411k2411+8ix 3354a699a3sk24112sa1950t092l2sb07743sk271c 5019
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transistor a2160
Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124
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n12861n13801mn1381n13811+15n13821n15040215p0802n150412mn15151mn152121transistor a2160transistor a1270a1270 transistortransistor 2sd 45151431t transistortransistor a769mini circuits 15542a1270 yan 5606k
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3866S
Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series
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1020gn12861n12b62mn1381+16mn13811mn1382115p080215p540258851a70803a3866stransistor a999bs 7818 -1995transistor tt 2206a999 transistortt 2206 transistora1535a8340uastransistor 3866s2sd 4515
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D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A
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125mw2sc46272sc50212sa1790+162sc46262sc46552sc48092sc52952sc48082sa1806d2375d1259ad1267ad1265atransistor 2sa19492sd2328atransistors selection guided1261ac37952sb1526
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A1534
Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin
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t0-92t092lt0220ft0220+10t092nla1534t0922sb6422sb0774ss-mini 32sa14952sb9462sa1124a1534a
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sC4633
Abstract: 2sc1947 2sc1949 2SC1969 2sc1972 2sc1971 SC-4633 2SC1940 2SC1914A 2SC1913A
Contextual Info: - 112 - <Ta=25‘C.*EP àïc=25<C m 2SC1913A 2SC1914A 2SC1921 2SC1922 2SC1923 2SC1924 2SC1925 2SC1926 2SC1927 2SC1929 2SC1941 2SC1942 2SC1944 2SC1945 2SC1946 2SC1946A 2SC1947 2SC1949 2SC1952 2SC1953 2SC1955 2SC1959 2SC1965 2SC1965A 2SC1966 2SC1967 2SC1968A
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2sc1913a2sc1914a2sc19212sc1922+142sc19232sc19242sc19252sc19552sa562tmo-92jsc46332sc19472sc19492sc19692sc19722sc1971sc-46332sc1940
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2SD2458
Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
Contextual Info: • Silicon Small Signal Transistors Package No. S9TST0D Applica tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type
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o-92nl2sb14622sd22162sb1218a+15i2sd1819a2sb709a2sd601a2sb1627i2sd24962sa1309a2sd24582sd24362sd24342sb16002sb6422sd24332sd10102sb774 transistorhoa1404-2
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2SA1301 TOSHIBA
Abstract: da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646 2SA1782
Contextual Info: - 24 Si - tt « € Manuf- B S 5 a a h h = SANYO » 2SA1115 * TOSHIBA $ m b NEC ÍL HITACHI 1onn 2SA1782 2SA1048 2SA1782 2SA1048CL 3t 3? X 3Ë K «£ « T -y-viry 0 3Ï 0 ÍL B ÍL 0 ÍL 2SA1249 2SA1162 2SA1337 2SA1220A 2SA812 ZSB631K 2SB827 2SB817 2SA1207
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2sa14152sa17822sa10482sa1127+14sa12992sa933s2sa104s2sa1337sa1122sa1301 toshibada 11912sa970toshiba 2sb7542sa904a2sa10382sa11732sa13232sb646
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2SA999
Abstract: 2SA1015 2sa733 2SA1038 2sa 1023 2SA1026 2SA921 2SA933 2SB646 2SB1085B
Contextual Info: - 20 - m * Type No. a 2 SA 1006A B Is 2SA 1006B 2SA 1007 , 2SA 1008 , a a a a 2SA 1010 ^ 2SA 1011 „ 2SA 1012 „ 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 1013 ' 1014 1015,. 1016 ^ 1016K 1017 ^ 1018 ^ 1019 „ 1020 / 2SA 1021 2SA 1022 2SA 1023 2SA 1024 H ' 2SA 1025 ^
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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2SA1015
Abstract: 2SA733 2SA847A 2SA968 2SA933 2SA823 2SA817 2sa777 2SA970 2SA935
Contextual Info: - m « Type No. 2SA 816 2SA 817 -• 2 SA 818 — 2SA 819 2SA 2SA 2SA 2SA 820 821 822 823 ^ 2SA 824 2SA 825 2SA 826 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 827 828 829 830 — 831 832 ^ 833 834 2SA 8 3 5 2SA 836-'' 2SA 837 2SA 838 2SA 839,*— 2SA 840 ^ 2SA 8412SA 842 2SA 843
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