2SA879 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0879 (2SA879) Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1573 Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 • Features • High collector-emitter voltage (Base open) VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0879 (2SA879) Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1573 Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 • Features • High collector-emitter voltage (Base open) VCEO

2SC1573

Abstract: 2SA879 2SC1573A 2SC1573B
Contextual Info: Transistor 2SC1573, 2SC1573A, 2SC1573B Silicon NPN triple diffusion planer type For high breakdown voltage general amplification For small TV video output Complementary to 2SC1573 and 2SA879 Unit: mm 5.0±0.2 4.0±0.2 High collector to emitter voltage VCEO.

2SA0879

Abstract: 2SA879 2SC1573
Contextual Info: Transistors 2SA0879 2SA879 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1573 Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 • Features • High collector-emitter voltage (Base open) VCEO 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C

2SA0879

Abstract: 2SA879 2SC1573
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0879 (2SA879) Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1573 Unit: mm 4.9±0.2 • Features ue pl d in an c se ed lud pl vi an m m es si tf

2SA0879

Abstract: 2SA879 2SC1573
Contextual Info: Transistor 2SA0879 2SA879 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1573 Unit: mm 5.9±0.2 4.9±0.2 8.6±0.2 • Features High collector to emitter voltage VCEO. (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage

2SA879

Abstract: 2SC1573
Contextual Info: Transistor 2SA879 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1573 Unit: mm 5.9±0.2 4.9±0.2 ● 8.6±0.2 • Features High collector to emitter voltage VCEO. +0.3 0.7–0.2 0.7±0.1 ■ Absolute Maximum Ratings Ta=25˚C

2SC1573

Abstract: 2SC1573A 2SA879 2SC1573B
Contextual Info: Transistor 2SC1573, 2SC1573A, 2SC1573B Silicon NPN triple diffusion planer type For high breakdown voltage general amplification For small TV video output Complementary to 2SC1573 and 2SA879 Unit: mm 5.9±0.2 4.9±0.2 High collector to emitter voltage VCEO.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0879 (2SA879) Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1573 Unit: mm 4.9±0.2 8.6±0.2 M Di ain sc te on na tin nc ue e/ d 5.9±0.2 • Features

2SA0879

Abstract: 2SA879 2SC1573
Contextual Info: Transistor 2SA0879 2SA879 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1573 Unit: mm 5.9±0.2 4.9±0.2 High collector to emitter voltage VCEO. +0.3 2.54±0.15 Parameter Symbol Ratings Unit Collector to base voltage VCBO

2SC1573

Abstract: 2SC1573A 2SA0879 2SA879 2SC1573B
Contextual Info: Transistor 2SC1573, 2SC1573A, 2SC1573B Silicon NPN triple diffusion planer type For high breakdown voltage general amplification For small TV video output Complementary to 2SC1573 and 2SA0879 2SA879 Unit: mm 5.9±0.2 4.9±0.2 High collector to emitter voltage VCEO.

2sa899

Abstract: 2SC1904 2SA904A 2SA933LN 2sc2673 2SA898 2SA887 2SA881 2SA93 2sc1846
Contextual Info: - 16 - Ta=25£C, *EP(âTc=25t M 2SA847A 2SA854 2SA854S 2SA872 2SA872A 2SA874 2SA874M 2SA879 2SA881 2SA885 2SA8S6 2SA887 2SA893 2SA893A 2SA898 2SA899 2SA900 2SA904A 2SA913 2SA913A 2SA914 2SA915 2SA916 2SA921 2SA929 2SA930 2SA933 2SA933LN 2SA 933S 2SA933SU

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc1589

Abstract: 2SC1502 2SC1583 2SC1575 2SC1508 2sc1589 equivalent 2SC1598 2SC1528 2SC1588 2SC1591
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) 2SC1501 (V) Electrical characteristics (Ta=25ºC) Tj DC Current Gain hFE fab/ft* VCE Ic (ºC) (MHz) (V) (mA) (mA) (mW) 300 5 100 2SC1503 50 3A 2SC1504 400 6 2SC1505 300 7 200 2SC1506 300 7 200

2SA1015

Abstract: 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A
Contextual Info: - 34 - m s Type No. £ M a n u f. 2SA 1535 , tö T 2SA 1535A tö T = * SANYO 2SB1037 X 3E TOSHIBA B 'S NEC 1 Tn« B tL HITACHI H ± il FUJITSU tö T MATSUSHITA — M MITSUBISHI 2SB649A = 2SA 1542 □—A 2SA 1543 □— A 2SA1015 2SB642 2SA 1544 b m. 2SA1624

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

A1534

Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin

2S897

Abstract: 2SA1178 2SA1225 2SA1371 2SA1243 2SA1628 2SA1586 2SA879 2SA1770 2SA1283
Contextual Info: 66 - m % tt T y p e No. 2 SB 1216 ^ ^ 2SB 1218 ^ 2SB 1218A a * 85 T fö T tö T 2SB 1219A fö 2SB 1220 ta 2SB 1219 V- 2SB 1222 2S8 1223 f 2SB 1224 2SB 1225 J 2SB 1226 ^ ±L 2SA1622 2SA1586 m ± m FU JITSU iß T MATSUS H I T A 2SB1218A 2 S A1576 2 S A 16 0 3

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SA1281

Abstract: 2SA1281C 2NS401 2SA949Y 2SA429G 2SA1013-0 C 2N4888 2SA429GTM 2SA429 2SA778AK
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number S 10 >= AST5401 2NS401 S05401 TMPT5401 2SA429 2SA940 2SA778K 2SA949 2SA429G-TM-0 2SA12000 lS 20 2S 30 -40 45 SO ~:dl~~r:C PN4888 PN4888 PN4889 PN4889 PN4889 2N4888 2SA916 2SA916 FairchildSC CentralSemi FairchildSC

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle