2SA1011 Search Results

2SA1011

Abstract: 2SC2344
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1011 Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SC2344 APPLICATIONS • High voltage switching , • Audio frequency power amplifier; • 100W output predriver applications

transistor 2sc2344

Abstract: 2sa1011 2SC2344
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1011 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Typ.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -160V(Min.) ·Complement to Type 2SC2344

2SA1011

Contextual Info: Æ&m o s p e c PNP SILICON POWER TRANSISTORS PNP 2SA1011 2SA1011 transistor is designed for use in general purpose Power amplifier,vertical output application FEATURES: * Collector-Emitter Voltage VCE0= 160V Min * DC Current Gain hFE= 60-200@lc= 300mA 1.5 AMPERE

2SC2344

Abstract: 2sa1011
Contextual Info: JMnic Product Specification 2SC2344 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA1011 APPLICATIONS ・High voltage switching ・Audio frequency power amplifier; ・100W output predriver applications PINNING PIN

2SA1011

Abstract: 2SC2344
Contextual Info: Inchange Semiconductor Product Specification 2SA1011 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2344 APPLICATIONS ·High voltage switching , ·Audio frequency power amplifier; ·100W output predriver applications

2sa10

Abstract: 2SA1015L 2SC1815L 2sc2562 SA1011 2SA1012 2SA1013 2SA1015 2SA1035 2SA1016K
Contextual Info: - 20 - m n Ta=25t , *En(àTc=25t;) m 2SA1011 2SA1012 2SA1013 2SA1015 2SA1015L 2SA1016 2SA1016K 2SA1018 2SA1020 2SA1022 2SA1025 2SA1029 2SA1030 2SA1031 2SA1032 2SA1034 2SA1035 2SA1036K 2SA1037K 2SA1037KLN 2SA1038 2SA1039 2SA1040 2SA1041 2SA1042 2SA1043 2SA1044

2SB1099

Abstract: 2SB615 nec 2SB1099 2SB886 B676 1086a 1091 2S8834 2sb536 TOSHIBA 2SB613
Contextual Info: 62 - « tt m Type No. € Manuf. a SANYO NEC 2SB601 □—A 2SA1706 2SB 1077 a ti 2SB880 2SB676 2SB 1078 XL 2SB886 2SB673 2SB 1078K xz: 2SB 1080 a a 2SB 1085 □— a 2SB 1085A 2SB 1086 ^ & 2SB632K 2SA962A 2SA1011 2SA968 □— A 2SA1011 □— A 2SA1249 2SB 1Q86A

2SA818

Abstract: 2SB681 2SB849 2SC4341 2SB681 TOSHIBA 2SB601 2SB686 2SB688 2SB558 2sb669
Contextual Info: 49 - S € Type No. a « Manuf. E ft SANYO 2SB 648 B ÍL 2SA1209 2SB 648A S ÍL 2SA1209 2SB 649 ÍL 2SB 649A S ÎL 2SB 650 H ÎL 2SB 653A ÍL 2SB 654A ÎL 2S8 655A i 2SB 668 • 2SA1011 Ä TOSHIBA Is NEC ÍL HITACHI i t i FUJITSU fâ T MATSUSHITA h m MITSUBISHI

2SA1011

Abstract: 2SC2073
Contextual Info: 2SA1011 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SC2073 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)

Contextual Info: Ls.iis.ii roduati, One. Cx 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1011 Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage: VCE(satr -0.5V(Typ.)@ lc= -0.5A

2SA1011

Abstract: 2SC2344 amplifier 100W
Contextual Info: JMnic Product Specification 2SA1011 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC2344 APPLICATIONS ・High voltage switching , ・Audio frequency power amplifier; ・100W output predriver applications PINNING PIN

d1684

Abstract: C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460
Contextual Info: Transistors Type Number SAftYO Index *:New products for FEB added. Type No. Package Page Type No. 2SA Typi T0220 2SA1011 NP Al 016,1 SPA A] 177 NP A 1207 MP Al 208 T0126 Al 209 A ’237 DP6A, B il A: 238 it A! 239 il Ax 240 NP A: 246 T0126 A: 248 h A. 249

2sc2344

Abstract: 2sa1011 savantic
Contextual Info: SavantIC Semiconductor Product Specification 2SC2344 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA1011 APPLICATIONS ·High voltage switching ·Audio frequency power amplifier; ·100W output predriver applications

2sa1011

Abstract: 2sc2344 2SA10 100w amp sanyo 70502 2sa101
Contextual Info: Ordering number:ENN544G PNP/NPN Epitaxial Planar Silicon Transistors 2SA1011/2SC2344 High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications Package Dimensions unit:mm 2010C [2SA1011/2SC2344] 10.2 3.6 4.5 5.1 18.0 15.1 6.3 2.7 1.3 14.0 5.6

2sa970

Abstract: 2SA564A 2SA906 2sa1015 2SA988 2SA904A 2SA1142 2SA1207 2sa949 2SA1038
Contextual Info: - 2SA 893A 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 894 895 896 89/ 898 ^ 899 ^ 900 / 901 2SA 902 ^ 2SA 903 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 904 905 ^ 906 ^ 912 913 913A 914 915 — 916 , 917 ^ 918 2SA 920 2SA 921 2SA 2SA 2SA 2SA 2SA 922 S 923 '' 924 925

2SB536A

Abstract: 2SA1301 TOSHIBA 2SB1320A 2SA1356 2SB1318 2SA1624 2SB1242 2sa1133 2SA1426 2SA1431
Contextual Info: - 2SB 2SB 2SB 2SB 2SB 1321 ^ 1322 ^ 1323 1324 ^ 2SB 2SB 2SB 2SB 2SB 2SB 2SB 1326 1328 1329 , 1330 * 1331 1332 1333 / 2SB 2SB 2SB 2SB 2SB 2SB 1336 1337 1338 1339 1340 1341 *• 2SB 1345 2SB 1346 2SB 1347 SANYO B M TOSHIBA NEC ÏL HITACHI * ± a FUJITSU fâ

2SB737

Abstract: 2SA1015 2SA978 2SA933 2sa1306 2SA933 R 2SA970 2SA1127 2SA1142 2SA929
Contextual Info: - m % tt 2S A 973 « M a n u f. T y p e No. J SANYO tö T 2S A 9 7 7 tö T 2SA1209 2S A 9 7 7 A fé T 2SA1352 = » _ * 2S A 978 2 SA 979 X TOSHIBA NEC 2S A988 2SA1030 2SA1142 2SB648 ± FUJITSU a T & M ATSUSHITA H £ M ITSU BISHI □ — A RO HM 2SA933 2SA1127

2SC2322

Abstract: 2SA1002 2SA1009 2SA10 2SA1009/A 2SA1007 2SA101
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

2SC2291

Abstract: 2SC2320 2SC2338 2SC2285A-MA 2SA1010 2SC2289 2SC2318 2SC2329 2SC2286-KA 2SC2287-KA
Contextual Info: - 120 - m % Ta=25'C, *EP(iTc=25<C m % f t & m & VcBO Vc e o (V) (V) 1c ( d c ) (A) Pc Pc* (W) m i CBC\ vm 3x j? VcB (V) (Uk) , hF E (min) ft fê (max) tt (Ta=25‘ 1C) Ic / I e (A) Vc e (V) 2SC2287-KA Bn an Bn Bn 2SC2287-MA bm VHF PA 38 18 1.5 17 500 30

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

2SD313

Abstract: transistor 2sC3781 2SD1159 2sa128
Contextual Info: SAUYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s * Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device *More collector dissipation available when a device alone is used

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

SB145

Abstract: 2sd1159 hc/2SB824 transistor 2sb507 sanyo 2Sd1666 2sa128 2SB824 transistor 2sd313
Contextual Info: SAfíYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s ♦ Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device ♦ More collector dissipation available when a device alone is used