2SC1980 Search Results

2SC1980

Abstract: TRANSISTOR 2SC1980 2SA921
Contextual Info: Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SA921 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings Ta=25˚C Parameter

2SA0921

Abstract: 2SC1980
Contextual Info: Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SA0921 Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage Base open Emitter-base voltage (Collector open)

2SA921

Abstract: 2SC1980 2SA0921 2SC198
Contextual Info: Transistors 2SA0921 2SA921 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV 0.7±0.2

2SA0921

Abstract: 2SA921 2SC1980 TRANSISTOR 2sc1980
Contextual Info: Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SA0921 2SA921 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings (Ta=25˚C)

Contextual Info: Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SA0921 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • High collector-emitter voltage Base open VCEO • Low noise voltage NV 0.7±0.2 M Di ain

2SA0921

Abstract: 2SA921 2SC1980
Contextual Info: Transistor 2SA0921 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings (Ta=25˚C)

2SA0921

Abstract: 2SA921 2SC1980
Contextual Info: Transistors 2SA0921 2SA921 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV 0.7±0.2 • Features

2SA921

Abstract: 2SA92 2SC1980 2SC198
Contextual Info: Transistor 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings Ta=25˚C Parameter

Contextual Info: Transistors 2SA0921 2SA921 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 5.1±0.2 M Di ain sc te on na tin nc ue e/ d 5.0±0.2 d p lan inc ea se ed lud p lan m m es ht visi

Contextual Info: Transistors 2SA0921 2SA921 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV 0.7±0.2

2SA0921

Abstract: 2SA921 2SC1980
Contextual Info: Transistor 2SA0921 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 5.0±0.2 • Absolute Maximum Ratings 0.7±0.1 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage

Contextual Info: Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SA0921 Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit VCBO 120 V Collector-emitter voltage Base open

337 transistor

Abstract: 2SC1980 2SA921 Gv-80dB
Contextual Info: Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SA921 Unit: mm 5.0±0.2 4.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. 0.7±0.2 ● • Absolute Maximum Ratings

2SA0921

Abstract: 2SC1980
Contextual Info: Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SA0921 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • High collector-emitter voltage Base open VCEO • Low noise voltage NV 0.7±0.2 • Features

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

sC4633

Abstract: 2sc1947 2sc1949 2SC1969 2sc1972 2sc1971 SC-4633 2SC1940 2SC1914A 2SC1913A
Contextual Info: - 112 - <Ta=25‘C.*EP àïc=25<C m 2SC1913A 2SC1914A 2SC1921 2SC1922 2SC1923 2SC1924 2SC1925 2SC1926 2SC1927 2SC1929 2SC1941 2SC1942 2SC1944 2SC1945 2SC1946 2SC1946A 2SC1947 2SC1949 2SC1952 2SC1953 2SC1955 2SC1959 2SC1965 2SC1965A 2SC1966 2SC1967 2SC1968A

NEC 2701

Abstract: NEC 2703 2701 NEC NEC 2705 2SC2724 2sc2257 2sc2786 2674 k 2679 2SC2911
Contextual Info: 144 - a s T ype No. € Manuf. 2SC 2663 X 2SC 2665 if y 'r y H $ SANYO 2 2SC 2668 |C 2SC 2669 S 2 2SC 267Û K 2 2SC 2671 * fé T 2SC 2672 a M 2SC 2673 / □ —A 2SC 2674 2SC 2675 2SC2724 2SC2926S 2SC2787 2SC2724 2SC2058S 2SC2724 2SC2058S 2SC3776 2SC3128 2SC 267KH

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

an6512n

Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Contextual Info: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

NEC 2532

Abstract: Ka 2535 2SC2240 2SC2460b 2SC2939 2SC2538 2SC1914A 2sc2238 2sc2555 2SC2407
Contextual Info: - tt B ÌL B tL B « M anuf. € = ¡ M £ T ype No. 2SC 2511 2SC 2512 2SC 2516 ^ 2SC 2517 # 2SC 2518 * * 2SC 2519 2SC 2522 2SC 2522A 2SC 2523 y 2SC 2527 y 2SC 2528 X * 2SC 2529 + 2SC 2530 ^ 2SC 2531 2SC 2532 ✓ 2SC 2534 r 2SC 2535 „ 2SC 2536 2SC 2537 2SC 2538