2SC1959 Search Results

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

Contextual Info: TOSHIBA 2SC1959 2SC1959 TO SHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY LO W POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SW ITCHING APPLICATIONS • . 5.1 M A X . Excellent hpg Linearity : hpE (2) = 25 (Min.) : V çe = 6V, Iç = 400mA

2sc1959 transistor

Abstract: datasheet 2sc1959 2SC1959
Contextual Info: ST 2SC1959 NPN Silicon Epitaxial Planar Transistor for switching, driver stage and audio frequency low power amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be

400 Watt Audio amplifier IC

Abstract: 2sc1959 transistor
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1959 Features • • • • Audio frequency low power amplifier applications, driver stage amplifier applications, switching applications

2sc1959 transistor

Abstract: 2SC1959
Contextual Info: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SC1959 TRANSISTOR NPN TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0.5 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 35 V V(BR)CBO: Operating and storage junction temperature range

2sc2271e

Contextual Info: TO-92 Plastic Package Transistors NPN E lectrical C h aracteristics (Ta=25*C, U nless O therw ise Specified) M aximum Ratings Type No. 2SC1959Y ' ' CBO (V) Min 35 ^CEO V EBO (V) Min (V) Min 30 5 'c PD (W) (A) @Tc=25°c 0.5 0.5 *CBO ^CB *CES (ma> § (V) (mA)

2SC1959

Contextual Info: ST 2SC1959 NPN Silicon Epitaxial Planar Transistor for switching, driver stage and audio frequency low power amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be

400 Watt Audio amplifier IC

Abstract: 200 watt audio amplifier ic
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1959 Features • • • • Audio frequency low power amplifier applications, driver stage amplifier applications, switching applications

C1959

Abstract: c1959 transistor C1959 NPN Transistor amplifier mcc transistor c1959
Contextual Info: MCC TM Micro Commercial Components 2SC1959-O 2SC1959-Y 2SC1959-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Audio frequency low power amplifier applications, driver stage

C1959

Abstract: c1959 transistor transistor c1959 C1959 NPN Transistor 2SC1959Y
Contextual Info: MCC TM Micro Commercial Components 2SC1959-O 2SC1959-Y 2SC1959-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Audio frequency low power amplifier applications, driver stage

sC4633

Abstract: 2sc1947 2sc1949 2SC1969 2sc1972 2sc1971 SC-4633 2SC1940 2SC1914A 2SC1913A
Contextual Info: - 112 - <Ta=25‘C.*EP àïc=25<C m 2SC1913A 2SC1914A 2SC1921 2SC1922 2SC1923 2SC1924 2SC1925 2SC1926 2SC1927 2SC1929 2SC1941 2SC1942 2SC1944 2SC1945 2SC1946 2SC1946A 2SC1947 2SC1949 2SC1952 2SC1953 2SC1955 2SC1959 2SC1965 2SC1965A 2SC1966 2SC1967 2SC1968A

2SC1959

Abstract: 2SA562TM
Contextual Info: TOSHIBA 2SC1959 2SC1959 TO SHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS A U D IO FREQUENCY LO W POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SW ITCHING APPLICATIONS • Excellent hpE Linearity : ^FE (2)-25 (Min.) : Vç;e = 6V, Ic = 400mA

2SC1959

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1959 TRANSISTOR NPN TO-92 FEATURES z Excellent hFE linearlity 1.EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

2SC1815

Abstract: 2sc372 2sc1741 2sc2061 2sc2381 2sc1907 2SC2284 2sc1726 2SC2495 2sc458
Contextual Info: - 10 2 - £ tt € Manuf. 2SC 944$ a « 2SC 945 / s n 2SC 947 ^ T 2SC 948 ^ te T m Type No. * * * h SANYO * M B TOSHIBA S NEC B ÍL HITACHI 2SC1907 2SC1215 2SC2926 2SC458 2SC2634 2SC2410 2SC828 2SC387A %rBM 2SC1959 2SC945 2SC454 WrB m 2SU»4ö 2SC454 *

2SC1959

Abstract: 2SA562TM
Contextual Info: 2SC1959 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SC1959 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Unit: mm • Excellent hFE linearity : hFE (2) = 25 (min): VCE = 6 V, IC = 400 mA

Contextual Info: TO-92 Plastic-Encapsulate Transistors 2SC1959 TRANSISTOR（ NPN ） TO—92 FEATURES Power amplifier applications 1.EMITTER MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage

C1959

Abstract: c1959 transistor 2sc1959 c1959 Y transistor C1959 NPN Transistor 2SC1959Y transistor c1959 2SC1959-GR 2SC1959-Y 400 Watt Audio amplifier IC
Contextual Info: MCC TM Micro Commercial Components 2SC1959-O 2SC1959-Y 2SC1959-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • x x • Audio frequency low power amplifier applications, driver stage

datasheet 2sc1959

Abstract: 2SC1959
Contextual Info: DC COMPONENTS CO., LTD. 2SC1959 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency low-power amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Collector 3 = Base

2SC1959

Abstract: 2SC1959Y 2SC1959-Y 2sc1959 transistor 2Sc1959 equivalent 2SC1959-0 datasheet 2sc1959 2SC1959-O
Contextual Info: 2SC1959 0.5 A , 35 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Excellent hFE Linearity  High Transition Frequency TO-92 G H Emitter Collector

2sc1959 transistor

Abstract: 2SC1959
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1959 TRANSISTOR NPN TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0.5 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 35 V V(BR)CBO:

400 Watt Audio amplifier IC

Abstract: 2SA562TM 2SC1959 400 watt audio amplifier 200 watt audio amplifier ic
Contextual Info: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 2SC1959 Features • • • • Audio frequency low power amplifier applications, driver stage amplifier applications, switching applications Excellent hFE Linearity: hFE 2 =25(Min.) : VCE=6.0V, IC=400mA

Contextual Info: 2SC1959 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearlity MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30

2SA562TM

Abstract: 2SC1959
Contextual Info: 2SA562TM TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA562TM Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: • 1 watt amplifier application. • Complementary to 2SC1959.

C1959

Contextual Info: MCC TM Micro Commercial Components 2SC1959-O 2SC1959-Y 2SC1959-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Audio frequency low power amplifier applications, driver stage