2SA812 Search Results

smd transistor m6

Abstract: transistor smd marking m6 smd transistor M5 smd transistor m7 M6 smd transistor smd transistor marking M6 m4 SMD Transistor SMD TRANSISTOR M6 SOT23 smd transistor marking M6 PNP smd transistor 2sa812
Contextual Info: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SA812 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High DC Current Gain: hFE = 200 TYP. VCE = -6.0 V, IC = -1.0 mA 0.4 3 1 0.55 High Voltage: VCEO = -50 V 2 +0.1 0.95-0.1

2SA812K

Abstract: sot-23 Marking M6 M6 SOT23-3 marking of m7 diodes Diode marking m7 M6 Marking pnp m6 marking transistor sot-23 M6 transistor TRANSISTOR K 135
Contextual Info: 2SA812K -50 V, -100 mA PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z Complementary to 2SC1623K High DC Current Gain: hFE = 200 TYP. VCE = -6V, IC = -1mA

NEC C11531E

Abstract: 2SA812 2SC1623 C11531E C1984
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SA812 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to 2SC1623 • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) ) • High Voltage: VCEO = −50 V +0.1

Contextual Info: MCC 2SA812
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • NPN Silicon Epitaxial Transistors High DC Current Gain:90≦ hFE≦600. VCE=-6.0V, IC=-1mA

2SA812

Contextual Info: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

m6 marking transistor sot-23

Abstract: transistor SOT23 m6 hFE-200 transistor PNP marking M6 transistor M5 SOT23 2sa812
Contextual Info: 2SA812 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V — — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

m6 marking transistor sot-23

Abstract: sot-23 Marking M6 2SA812 Package M5 SOT23 transistor transistor SOT23 m6 M6 SOT23 m5 marking transistor sot-23 dc m7 footprint m6 sot package sot-23 2SC1623
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. 2SA812 Pb Lead-free VCE=-6.0V,IC=-1.0mA z High Voltage: VCEO=-50V APPLICATIONS z Audio frequency, general purpose amplifier

Diode marking m7

Abstract: marking of m7 diodes marking M4
Contextual Info: MCC TM Micro Commercial Components 2SA812
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x x High DC Current Gain:90Љ hFEЉ600. VCE=-6.0V, IC=-1mA High voltage: VCEO=-50V x Case Material: Molded Plastic. UL Flammability

2SA81

Abstract: 2sA812R
Contextual Info: 2SA812,2SA812R Audio Frequency, General Purpose Amplifier P N P Silicon Epitaxial Transistor P A C K A G E D IM E N S IO N S • Com plem entary to 2 S C 1 6 2 3 . in millimeters inches • H igh D C Current Gain: h F £ = 2 0 0 T Y P . ( V C E = - 6 . 0 V , lc = - 1 . 0 m A i

2SA812

Contextual Info: SILICON TRANSISTOR 2SA812 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAG E DIMENSIONS * C om plem en ta ry to 2SC1623 in m illim e t e r s * H igh D C Cu rren t Gain: * H igh Voltage: V ceo hFE - 200 T YP.

Contextual Info: SILICON TRANSISTOR 2SA812 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS i r m illim e te rs • Com plem entary to 2SC1623 • High DC C u rrent Gain: hpg = 200 TY P . V c e 5 - 6 .0 V , lc = —1.0 m A

2SA812

Abstract: 2sa812 transistor
Contextual Info: 2SA812 SOT-23-3L TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES 0.2 W (Tamb=25℃) 0. 95¡ À0. 025 PCM : 1. 02 Power dissipation 1. 60¡ À0. 05 0. 35 1. 9 Collector current ICM : -0.1 A Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range

2SA812A

Abstract: 2SC1623A
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SA812A PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to 2SC1623A • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) • High Voltage: VCEO = −50 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Contextual Info: Product specification 2SA812 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High DC Current Gain: hFE = 200 TYP. VCE = -6.0 V, IC = -1.0 mA 0.4 3 1 0.55 High Voltage: VCEO = -50 V 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

Contextual Info: MCC 2SA812
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • PNP Silicon Epitaxial Transistors High DC Current Gain:90≦ hFE≦600. VCE=-6.0V, IC=-1mA

2SA1301 TOSHIBA

Abstract: da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646 2SA1782
Contextual Info: - 24 Si - tt « € Manuf- B S 5 a a h h = SANYO » 2SA1115 * TOSHIBA $ m b NEC ÍL HITACHI 1onn 2SA1782 2SA1048 2SA1782 2SA1048CL 3t 3? X 3Ë K «£ « T -y-viry 0 3Ï 0 ÍL B ÍL 0 ÍL 2SA1249 2SA1162 2SA1337 2SA1220A 2SA812 ZSB631K 2SB827 2SB817 2SA1207

2SA812

Abstract: m6 marking transistor sot-23 2SA812M6 2SA812-M6
Contextual Info: 2SA812 SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * Complement to 2SC1623 * Collector-Base Voltage :Vcbo= -60V * Excellent Hfe linearity Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃

Contextual Info: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x • • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

2SA812

Contextual Info: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors 2SA812 SOT-23-3L TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES W (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current A ICM : -0.1 Collector-base voltage V V(BR)CBO : -60

m6 marking transistor sot-23

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. 2SA812 Pb Lead-free VCE=-6.0V,IC=-1.0mA z High Voltage: VCEO=-50V APPLICATIONS z Audio frequency, general purpose amplifier

2SC3735

Abstract: 1SS153
Contextual Info: Q U ICK REFERENCE GUIDE 3 TABLE OF SAME CH ARACTERISTICS IN DEFERENT PACKAGES 3 PIN SU P E R M IN I M O L D (FIG. 6) 3 PIN M IN I M O L D (FIG 4} FM /A M M IX ./ O SC / IF 2SC4179 2SC1009A AF A M P 2SA1611 2SA812 2SA1612 2SA811A A P P LIC A T IO N Driver, Output

2SA812M6

Abstract: 2SA812 2SC1623
Contextual Info: 2SA812 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * * * Complement to 2SC1623 Collector-Base Voltage :Vcbo= -60V Excellent Hfe linearity 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating 2.4 1.3 Unit Vcbo -60 V Collector-Emitter Voltage

Contextual Info: MCC 2SA812
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • NPN Silicon Epitaxial Transistors High DC Current Gain:90≦ hFE≦600. VCE=-6.0V, IC=-1mA High voltage: VCEO=-50V

Contextual Info: MCC TM Micro Commercial Components 2SA812
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • PNP Silicon Epitaxial Transistors High DC Current Gain:90≦ hFE≦600. VCE=-6.0V, IC=-1mA