2SA81 Search Results

2SC1627A

Contextual Info: 2SC1627A SILICON NPN EPITAXIAL TYPE PCT PROCESS U nit in mm DRIVER STAGE AM PLIFIER APPLICATIONS. VOLTAGE AM PLIFIER APPLICATIONS. • • Complementary to 2SA817A. Driver Stage Application of 30 to 35 W atts Amplifiers. M A X IM U M R ATING S (Ta = 25°C)

smd MARKING c17

Abstract: marking C15 2SA811A SMD 6v Transistor MARKING C16 SOT-23 smd transistor marking c17
Contextual Info: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SA811A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High DC current gain. 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base

smd transistor m6

Abstract: transistor smd marking m6 smd transistor M5 smd transistor m7 M6 smd transistor smd transistor marking M6 m4 SMD Transistor SMD TRANSISTOR M6 SOT23 smd transistor marking M6 PNP smd transistor 2sa812
Contextual Info: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SA812 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High DC Current Gain: hFE = 200 TYP. VCE = -6.0 V, IC = -1.0 mA 0.4 3 1 0.55 High Voltage: VCEO = -50 V 2 +0.1 0.95-0.1

500ma 40v pnp

Abstract: 2sA814 datasheet 2SA814 2SA815
Contextual Info: Inchange Semiconductor Product Specification 2SA814 2SA815 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1624/1625 ·High breakdown voltage APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications

Contextual Info: Product specification 2SA811A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High DC current gain. 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25

A817A

Abstract: 2SA817A 2SC1627A
Contextual Info: 2SA817A 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA817A ○ 励振段増幅用 ○ 電圧増幅用 単位: mm • 2SC1627A とコンプリメンタリになります。 • 30~35 W 用アンプのドライバに最適です。

transistor c1627a

Abstract: c1627a transistor c1627a 2SA817A 2SC1627A
Contextual Info: 2SC1627A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC1627A Driver-Stage Amplifier Applications Voltage Amplifier Applications Unit: mm • Complementary to 2SA817A. • Driver-stage applications for 30- to 35-watt amplifiers. Absolute Maximum Ratings (Ta = 25°C)

2SA814

Abstract: 2SA815 2SA815 y 2SC1624
Contextual Info: SavantIC Semiconductor Product Specification 2SA814 2SA815 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1624/1625 ·High breakdown voltage APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications

2SC1626

Abstract: 2SA816
Contextual Info: SavantIC Semiconductor Product Specification 2SC1626 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SA816 APPLICATIONS ·Designed for the driver stages of 30-50W high-fidelity amplifiers and medium speed switching up to 2A peak current

Contextual Info: 2SA817A TOSHIBA 2SA817A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. • • 5.1 MAX Complementary to 2SC1627A. Driver Stage Application of 30 to 35 Watts Amplifiers.

applications of single stage common emitter

Abstract: 2SA817A 2SC1627A
Contextual Info: TOSHIBA 2SA817A 2SA817A TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. • • 5.1 M A X Complementary to 2SC1627A. Driver Stage Application of 30 to 35 Watts Amplifiers.

2SA812K

Abstract: sot-23 Marking M6 M6 SOT23-3 marking of m7 diodes Diode marking m7 M6 Marking pnp m6 marking transistor sot-23 M6 transistor TRANSISTOR K 135
Contextual Info: 2SA812K -50 V, -100 mA PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z Complementary to 2SC1623K High DC Current Gain: hFE = 200 TYP. VCE = -6V, IC = -1mA

NEC C11531E

Abstract: 2SA812 2SC1623 C11531E C1984
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SA812 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to 2SC1623 • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) ) • High Voltage: VCEO = −50 V +0.1

Contextual Info: MCC 2SA812
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • NPN Silicon Epitaxial Transistors High DC Current Gain:90≦ hFE≦600. VCE=-6.0V, IC=-1mA

2sc1627a

Contextual Info: 2SC1627A TO-92MOD Transistor NPN TO-92MOD 1. EMITTER 1 2 3 5.800 6.200 2. COLLECTOR 8.400 8.800 3. BASE 0.900 1.100 Features — 0.400 0.600 13.800 14.200 Complementary to 2SA817A Driver Stage Application of 30 to 35 Watts Amplifiers — 1.500 TYP 2.900 3.100

2SC1627

Abstract: 2SA817
Contextual Info: 2SC1627 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC1627 励振段増幅用 電力増幅用 単位: mm • 2SA817 とコンプリメンタリになります。 • 20~25 W 用アンプのドライバに適しています。

m6 marking transistor sot-23

Abstract: transistor SOT23 m6 hFE-200 transistor PNP marking M6 transistor M5 SOT23 2sa812
Contextual Info: 2SA812 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V — — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

2SC1627

Abstract: 2SA817
Contextual Info: 2SC1627 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC1627 Driver Stage Amplifier Applications Voltage Amplifier Applications Unit: mm • Complementary to 2SA817 • Driver stage application of 20 to 25 watts amplifiers. Absolute Maximum Ratings (Ta = 25°C)

a817a

Abstract: 2SA817A 2SC1627A
Contextual Info: 2SA817A 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA817A ○ 励振段増幅用 ○ 電圧増幅用 単位: mm • 2SC1627A とコンプリメンタリになります。 • 30~35 W 用アンプのドライバに最適です。

m6 marking transistor sot-23

Abstract: sot-23 Marking M6 2SA812 Package M5 SOT23 transistor transistor SOT23 m6 M6 SOT23 m5 marking transistor sot-23 dc m7 footprint m6 sot package sot-23 2SC1623
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. 2SA812 Pb Lead-free VCE=-6.0V,IC=-1.0mA z High Voltage: VCEO=-50V APPLICATIONS z Audio frequency, general purpose amplifier

Diode marking m7

Abstract: marking of m7 diodes marking M4
Contextual Info: MCC TM Micro Commercial Components 2SA812
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x x High DC Current Gain:90Љ hFEЉ600. VCE=-6.0V, IC=-1mA High voltage: VCEO=-50V x Case Material: Molded Plastic. UL Flammability

2SA81

Abstract: 2sA812R
Contextual Info: 2SA812,2SA812R Audio Frequency, General Purpose Amplifier P N P Silicon Epitaxial Transistor P A C K A G E D IM E N S IO N S • Com plem entary to 2 S C 1 6 2 3 . in millimeters inches • H igh D C Current Gain: h F £ = 2 0 0 T Y P . ( V C E = - 6 . 0 V , lc = - 1 . 0 m A i

2SA812

Contextual Info: SILICON TRANSISTOR 2SA812 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAG E DIMENSIONS * C om plem en ta ry to 2SC1623 in m illim e t e r s * H igh D C Cu rren t Gain: * H igh Voltage: V ceo hFE - 200 T YP.

Contextual Info: SILICON TRANSISTOR 2SA811A AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURE PACKAGE DIMENSIONS in millimeters • High DC C u rrent G ain: 500 TY P. {VCE = - 6 . 0 V , lc = - 1 . 0 m A ABSOLUTE MAXIMUM RATINGS M u x im u m Voltages and C u rrent