2SC4177 Search Results

2SC4177

Contextual Info: 2SC4177 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES    High DC Current Gain. High Voltage. Complementary to 2SA1611 A L 3 3 C B

2SC4177

Contextual Info: 2SC4177 SOT-323 2SC4177 1. BASE 2. EMITTER TRANSISTOR NPN FEATURES 3. COLLECTOR 1. 01 REF 1. 25¡ À0. 05 Power dissipation W (Tamb=25℃) 2. 30¡ À0. 05 1. 30¡ À0. 03 Collector current 0.1 A ICM: Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range

L6 smd

Abstract: smd L6 smd marking l5 marking L6 npn smd marking L6 MARKING L4 l6 marking smd SMD l4 2SC4177
Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxia 2SC4177 Features High dc current gain High voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage VCEO 50 V

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SC4177 TRANSISTOR NPN FEATURES SOT–323  High DC Current Gain  Complementary to 2SA1611  High Voltage APPLICATIONS  General Purpose Amplification 1. BASE

2SA1611

Abstract: 2SA1611M6 marking M6 Diode marking m7 M7 marking 2SC4177 2SA1611-M7 marking m5 600 marking
Contextual Info: 2SA1611 -0.1A , -60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES  High DC Current Gain  High Voltage  Complementary to 2SC4177 A L

Contextual Info: SILICON TRANSISTO R 2SC4177 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR FEATURES P A C K A G E D IM E N S IO N S • Complementary to 2SA1611 in m illim eters • High DC Current Gain: hpe = 200 TYP. V ce = 6-0 V, tc - 1.0 mA

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SA1611 TRANSISTOR PNP FEATURES SOT–323  High DC Current Gain  High Voltage  Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

SA1611

Contextual Info: SILICON TRANSISTOR 2SA1611 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeter* • Complementary to 2SC4177 2 . 1 ± 0.1 • High D C Current Gain: hpE = 200 TYP. {VC e = - 6 . 0 V, lc « - 1 . 0 m A

2SC4177

Abstract: 2SC5343
Contextual Info: 2SC4177 ＳＯＴ－３２３ 2SC4177 TRANSISTOR NPN 1.BASE 2.EMITTER FEATURES １．２５±０．０５ Parameter Symbol ０．３０ ２．００±０．０５ ２．３０±０．０５ １．３０±０．０３ Power dissipation PCM : 0.15

TC-6209

Abstract: 2SA1611 2SC4177 MEI-1202 2115A NEC IC free
Contextual Info: DATA SHEET IMEC SILICON TRANSISTOR 2SA1611 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR FEATURES • C om plem entary to 2SC4177 • High DC Current Gain: hFE = 200 TYP. V ce = -6 .0 V, Ic = -1 .0 mA • High Voltage: V ceo = -5 0 V

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SC4177 TRANSISTOR NPN FEATURES SOT–323  High DC Current Gain  Complementary to 2SA1611  High Voltage APPLICATIONS  General Purpose Amplification 1. BASE

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC4177 1. BASE 2. EMITTER TRANSISTOR NPN FEATURES 3. COLLECTOR 1. 01 REF 1. 25¡ À0. 05 Power dissipation W (Tamb=25℃) 2. 30¡ À0. 05 1. 30¡ À0. 03

S0426

Abstract: 2SC417 2SC4177 F210 T460 T540 40yw 2181M 0427J TC6215
Contextual Info: Silicon Transistor 2SC4177 f t ftw i t 7 "' -y K I C J B t L T o j g / J ' ^ ^ - r i ) ») , o2SA1611 t 3 >7° 'J / >9 m m f l t t . t. : mm) 2 . 1 + 0.1 U T-lfIfi-C'ë â i “o 1.25 ± 0 . 1 ohFE^SS^o hpE * 200 TY P . Vce = 6.0 V, Ic — 1.0 mA) o SiBEt>* ¡Ht'0

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE 2SC4177 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR FEATURES PACKAGE DIMENSIONS • C om plem entary to 2 S A 1 6 1 1 in m illim eters • High DC C u rrent G ain: h FE = 2 0 0 TYP.

L6 TRANSISTOR

Abstract: l4 transistor SOT-323 marking L6 SOT-323 marking .L6 transistor marking L6 marking L6 SOT 2SA1611 2SC4177W L4 SOT marking l4 sot
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4177W FEATURES z Excellent hFE linearity. z High voltage and current. z Complementary to 2SA1611. z Small package. Pb Lead-free APPLICATIONS z SOT-323 Audio frequency general purpose amplifier.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

4288A

Abstract: 2sc3936 hitachi 4269 2SC4903 2SC3874 2SC3995 2SC4186 2SC3931 2SC3210 2SC4083
Contextual Info: - 18 6 - Si € Type No. tt € Manuf. 1nJ 1“ ^ £ tN 2SC 4247 2SC 4248 2SC 4249 H * SANYO a s£ % TOSHIBA NEC ± a FUJITSU % T MATSUSHITA 2SC4404 2SC4186 2SC4903 2SC3934 2SC4404 2SC4186 2SC4264 2SC3934 2SC4263 2SC3931 2SC4400 2SC 4250 tL HITACHI H £ MITSUBISHI

MBR1620CT

Abstract: 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106
Contextual Info: MCC PART INDEX Diodes PART NUMBER 1.5KE10(C)(A) 1.5KE100(C)(A) 1.5KE11(C)(A) 1.5KE110(C)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1.5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C)(A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1.5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors ＳＯＴ－３２３ TRANSISTOR NPN 1.BASE 2.EMITTER １．２５±０．０５ Parameter Symbol ２．３０±０．０５ ０．３０ １．３０±０．０３

micro servo 9g

Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

2sk2500

Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250