2SC417 Search Results

2SC4177

Contextual Info: 2SC4177 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES    High DC Current Gain. High Voltage. Complementary to 2SA1611 A L 3 3 C B

2SC3532

Abstract: 2SC3533 2SC3082K 2SC3170 2SC4242 2SC4212 25C2335 2SC3077 2SC3531 2SC3535
Contextual Info: - M % it T y p e No. 2 SC 4 2 1 0 2SC £ Manuf. H b £ SANYO TOSHIBA = n 2SC 4212 ^ te T 2SC 4213 / M £ 2SC 4215 > 2SC 4216 ^ 2SC 4217 J = n 2SC 4218 y H & ÌH 2SC 4219 2SC2621 2SC4181 J 2SC 4221 J 2SC3425 2SC2688 ± FUJITSU ÒS te IE 2SC4400 2SC4415 2SC4178

ic ir 2103

Abstract: 2SC4175 MARKING B2 TRANSISTOR MARKING 3D
Contextual Info: DATA SHEET SILICON TRANSISTOR - - 2SC4175 'I „ • »' HIGH SPEED SWITCHING NPN SILICON EPITAXIALTRANSISTOR FEATURE PACKAGE DIMENSIONS • in m illim eters High Speed : t stg = 20 ns M A X . 2.1 + 0.1 1.25 + 0.1 ABSOLUTE MAXIM UM RATINGS M axim um Voltages and Current T a = 25 °C

2SC4177

Contextual Info: 2SC4177 SOT-323 2SC4177 1. BASE 2. EMITTER TRANSISTOR NPN FEATURES 3. COLLECTOR 1. 01 REF 1. 25¡ À0. 05 Power dissipation W (Tamb=25℃) 2. 30¡ À0. 05 1. 30¡ À0. 03 Collector current 0.1 A ICM: Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range

L6 smd

Abstract: smd L6 smd marking l5 marking L6 npn smd marking L6 MARKING L4 l6 marking smd SMD l4 2SC4177
Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxia 2SC4177 Features High dc current gain High voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage VCEO 50 V

b13 smd

Abstract: marking B12 smd marking b12 b14 smd 2SC4173 2SC417 30V30
Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxia 2SC4173 Features High gain bandwidth product: fT=200MHz min. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage

marking F12

Abstract: F12 MARKING 2SC4178
Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxia 2SC4178 Features Micro package. High gain bandwidth product. Low output capacitance. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SC4177 TRANSISTOR NPN FEATURES SOT–323  High DC Current Gain  Complementary to 2SA1611  High Voltage APPLICATIONS  General Purpose Amplification 1. BASE

2SA1608

Abstract: 2SC4173
Contextual Info: NEC j m^Tfvrx A Silicon T ran sisto r _ 2SC4173 N P N ih N PN Silicon Epitaxial T ra n sisto r Audio Frequency A m p lifie r and Switching # i t O ftg | mii i t i 1 , X 't -y - f > 7", • &)§ iSigipM Ù ¿1a S t t c f if f l- C 'è 4" 11] i t o

2SA1611

Abstract: 2SA1611M6 marking M6 Diode marking m7 M7 marking 2SC4177 2SA1611-M7 marking m5 600 marking
Contextual Info: 2SA1611 -0.1A , -60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES  High DC Current Gain  High Voltage  Complementary to 2SC4177 A L

2SC4172

Abstract: ITR06457 ITR06458 ITR06459 ITR06460
Contextual Info: Ordering number:ENN2546A NPN Triple Diffused Planar Silicon Transistor 2SC4172 500V/5A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · High-speed switching. · Wide ASO. · Suitable for sets whose height is restricted.

Contextual Info: SILICON TRANSISTO R 2SC4177 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR FEATURES P A C K A G E D IM E N S IO N S • Complementary to 2SA1611 in m illim eters • High DC Current Gain: hpe = 200 TYP. V ce = 6-0 V, tc - 1.0 mA

2SC3735

Abstract: 1SS153
Contextual Info: Q U ICK REFERENCE GUIDE 3 TABLE OF SAME CH ARACTERISTICS IN DEFERENT PACKAGES 3 PIN SU P E R M IN I M O L D (FIG. 6) 3 PIN M IN I M O L D (FIG 4} FM /A M M IX ./ O SC / IF 2SC4179 2SC1009A AF A M P 2SA1611 2SA812 2SA1612 2SA811A A P P LIC A T IO N Driver, Output

Contextual Info: SILICON TRANSISTOR 2SC4173 HIGH FREQUENCY AMPLIFIER AND SWITCHING NPN SILICON EPITAXIALTRANSISTOR FEATURES PACKAGE DIMENSIONS ir* millimeters • High Gain B a ndw idth P rodu ct: f j = 20 0 M H z M IN . • C om plem entary to 2S A 1608 ABSOLUTE M A XIM U M RATINGS

2SA1610

Abstract: l 0734 2SC4176 L0734 846 B34 t460 transistor
Contextual Info: SEC '> • ; = ] > l * 7 > Silicon Transistor lÏ T / \ f 7 2SC4176 « it : mm O X - i -y •f- > ? " i Î ) £ * i i â v > c, O 1 ? 2.1+0.1 ;7 tâ fP 1 iC rE * i ' j ' ? 1.25 ±0.1 O ÎIJ Îf ^ lp If i^ ë ^ o o 2SA 1610 £ 3 > 7 ° I) / > ? U tM È ffl-ü ë i t o

T06216

Abstract: 2SC4178
Contextual Info: S i l i c o n T r a n s is t o r 2SC4178 N P N ' i Z 2 > b m # n m m m t : o m 'm m iv *, » j. w r i j - ^ K i c s mm) t i - c * a - c i- . 2.1 + 0.1 1.25 + 0 .1 f x = 6 0 0 M Hz T Y P . I E= - 1 . 0 O ^ Ì § Ì S c * ' V j ' $ v>0 mA) C„b = 1 . 0 p F

transistor F13

Abstract: F12 MARKING 2SC4178 marking f13
Contextual Info: DATA SHEET SILICON TRANSISTOR BJECTRONOEVfCE 2SC4178 HIGH FREQUENCY AMPLIFIER IMPN SILICON EPITAXIALTRANSISTOR DESCRIPTION PACKAGE DIMENSIONS The2S C 4178 is designed for use in small type equipments especially recom­ in millimeters mended for Hybrid Integrated Circuit and other applications.

2SC4172

Contextual Info: Ordering number:EN2546A NPN Triple Diffused Planar Silicon Transistor 2SC4172 500V/5A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · Fast switching speed. · Wide ASO. · Suitable for sets whose height is restricted.

Contextual Info: DATA SHEET NEC / ELECTRON DEVICE SILICO N TRAN SISTO R / ^ ^ 2SC4179 FM /A M RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DIMENSIONS in m illim eters • High G ain B a ndw idth P rodu ct: f j = 250 M Hz TYP.

SA1611

Contextual Info: SILICON TRANSISTOR 2SA1611 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeter* • Complementary to 2SC4177 2 . 1 ± 0.1 • High D C Current Gain: hpE = 200 TYP. {VC e = - 6 . 0 V, lc « - 1 . 0 m A

Contextual Info: DATA SHEET NEC / ELECTRON DEVICE SILICO N TRANSISTO R / ^ / 2SC4178 HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS The 2SC4178 is designed fo r use in small ty p e equipm ents especially recom ­ in m illim eters mended fo r H y b rid Integrated C irc u it and o th e r applications.

Contextual Info: SILICON TRANSISTOR 2SC4178 HIGH FREQUENCY AMPLIFIER IMPIM SILICON EPITAXIALTRANSISTOR DESCRIPTION PACKAGE DIMENSIONS The 2SC4178 is designed fo r use in small type equipments especially recom­ in millimeters mended for Hybrid Integrated Circuit and other applications.

Contextual Info: SILICON TRANSISTOR 2SC4179 FM /A M RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters • High Gain Bandwidth Product: f-j- = 250 MHz TYP. • Low O utput Capacitance: CQb = 1.8 pF TYP. • Low Noise Figure: NF * 2.0 dB TYP.

2SC4176

Contextual Info: SEC DATA SH EET ELECTRON DEVICE SILICON TRANSISTOR / 2SC4176 HIGH S P EED SW ITCHING NPN SILICON EPITAXIAL TRA N SISTO R FEATU RE P ACKAG E DIMENSIONS • in m illim e te rs High Speed: t on < 12 ns tQff < 18 ns A B S O LU T E M A X IM U M R A T IN G S M axim um Voltages and C u rrent Ta * 25 °C