2SD1781K Search Results

Contextual Info: 2SD1781KFRA 2SD1781K Transistors Medium Power Transistor 32V, 0.8A AEC-Q101 Qualified 2SD1781K 2SD1781KFRA zExternal dimensions (Unit : mm) zFeatures 1) Very Low VCE(sat). VCE(sat) = 0.1V(Typ.) ̈́IC / IB= 500УA / 50mAͅ 2) High current capacity in compact package.

2SB1147

Contextual Info: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K • E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) Very low VcEfsat). 2.9+0.2 VcE(sat) — — 0.13V (Typ.) (Ic /Ib 1 1+0-2 1;1— 0.1 = 500m A /50m A ) . ± 0.1 08 J3 2) H igh cu rre n t c a p a c ity in co m p a ct

Contextual Info: 2SD1781K Transistors Medium Power Transistor 32V, 0.8A 2SD1781K zExternal dimensions (Unit : mm) zFeatures 1) Very Low VCE(sat). VCE(sat) = 0.1V(Typ.) ̈́IC / IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K. 2.9±0.2

Contextual Info: Transistors IC SMD Type Product specification 2SD1781K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 High current capacity in compact package. +0.1 1.3-0.1 +0.1 2.4-0.1 Very Low VCE sat .VCE(sat) = -0.1V(Typ.) IC / IB= 500mA / 50mA 2 +0.1

2SD1796

Abstract: SC64 2SB1204 2SD1802 2SD1771 2SD1771A 2SD1772 2SD1772A 2SD1808A 2SD1774
Contextual Info: - 266 - Ta=25Tî, *EPfíTc=25<C M 2SD1771 2SD1771A 2SD1772 2SD1772A 2SD1773 2SD1774 2SD1774A 2SD1775 2SD1775A 2SD1776 2SD1776A 2SD1777 2SD1778 2SD1778A 2SD1779 2SD1780 2SD1781K 2SD1782K 2SD1783 2SD1784 ¿ÒUi föO 2SD1787 2SD1796 2SD1797 2SD1799 2SD1800

2SD1781K

Abstract: transistor afr Transistor marking 0.5
Contextual Info: 2SD1781K SEMICONDUCTOR TECHNICAL DATA LOW FREQUENCY TRANSISTOR * Feature: NPN EPITAXIAL SILICON TRANSISTOR Shandong Yiguang Electronic Joint stock Co., Ltd Package:SOT-23 1 Very Low Vce(sat) Vce<0.4V (Ic/Ib= 500mA/50mA) (2) High current capacity in compact package

transistor D9C

Abstract: transistor marking D9c D9C transistor 2SD1781KP 2SD1781KPT marking D9C
Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SD1781KPT SURFACE MOUNT NPN Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE 3 (2) .055 (1.40) .047 (1.20) .103 (2.64)

2SD1781K

Contextual Info: h 7 > v ^ ^ / T ransistors O C A \ 4 I O ! / 2SD1781K 7 0 4 ! l O I f l I V N P N > U = l > h 7 > V ^ ^ Epitaxial Planar Super M ini-M old N P N Silicon Transistor /Medium Power Amp. • * W f i^ ilH / D ir n e n s io n s Unit : mm « f t D V c E I . a . l A ^ l C - t e t 'o

Contextual Info: Transistors Low Frequency Transistor -32V, - 0.8A 2 S B 1 1 9 7 K •Features 1 ) LOW V cE(sat) (Ic / I b 2) •External dimensions (Units: mm) V cE(sal). 21. 99±± 0.0.22 j — 0.5V = - 0 .5 A /- 5 0 m A ) 1 Ic = -0 .8 A . 3) Complements the 2SD1781K.

Q2SD1781k

Abstract: 7356 transistor BF 236 2SD1781K 2sd1781 4343 BF2369
Contextual Info: SPICE PARAMETER 2SD1781K by ROHM TR Div. * 2SD1781K NPN BJT model * Date: 2006/12/15 .MODEL 2SD1781K NPN + IS=180.00E-15 + BF=236.95 + VAF=100 + IKF=2.7356 + ISE=180.00E-15 + NE=1.5578 + BR=18.769 + VAR=100 + IKR=.39611 + ISC=287.24E-15 + NC=4.0956 + NK=.91226

Contextual Info: h 7 > y X $ / T ransistors 2SD 1781K 2SD1781K X tf £ * > T V 7° L - ;u K = NPN ' > u p > h 7 > y X $ 4 ,H 2]*rilll«ffl/Mediiim Power Amp. Epitaxial Planar Super Mini-Mold NPN Silicon Transistor • £tff2\fi£|3]/D im ensions U n it: mm) 1) V c E l s a t l t f ' ^ t C - f i l ' c

marking AFQ

Abstract: 2SB1197K 2SD1781K transistor afr
Contextual Info: 2SD1781K NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A L Very low VCE sat .VCE(sat) < 0.4 V (Typ.) (IC /IB = 500mA / 50mA) Complements to 2SB1197K

transistor B92

Abstract: transistor transistor equivalent book 2sb1197k PNP Transistor 2SD1781K
Contextual Info: Transistors Low Frequency Transistor *32V, *0.8A 2SB1197K FFeatures 1) Low VCE(sat). VCE(sat) x *0.5V (Ic / IB = *0.5A / *50mA) 2) IC = *0.8A. 3) Complements the 2SD1781K. FExternal dimensions (Units: mm) FStructure Epitaxial planar type PNP silicon transistor

TRANSISTOR BC 252

Abstract: BC transistor series
Contextual Info: 2SD1781K Transistor, NPN Features Dimensions Units : mm • • available in SMT3 (SMT, SC-59) package package marking: 2SD1781K; AF-*, where ★ is hFE code 2SD1781K (SMT3) 0.96 0.96 24 • extremely low collector saturation voltage • even though it is in a small package,

Contextual Info: 2SB1197K Transistors Low Frequency Transistor 32V, 0.8A 2SB1197K zExternal dimensions (Unit : mm) 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (3) All terminals have the same dimensions 0.4 +0.1 −0.05 zStructure Epitaxial planar type PNP silicon transistor

marking PB SOT-23

Contextual Info: WILLAS FM120-M+ 2SB1197KxLT1 THRU Low Frequency Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

2SD882P

Abstract: ch3904 marking J1 sot-23 T05 sot-23 sot-23 marking NE MARKING J3 SOT-23 marking NB SOT-23 CHT846BWPTR LT 723 ic marking J2 sot-23
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Collector to Emitter Marking Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA 200 500 200 150 150 150 500 200 100 100 100 50 500 200 600 600 100 100 100 150 150 150 200

2SC6144

Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
Contextual Info: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.

2SC4074K

Abstract: 2SC4326K TA6270F 2SA1821 2SB1051 2SD478 2SA1690 2SA1455K fiio x5 UMW8
Contextual Info: h 7 > v X ^ / T ransistors h 7 S ttli i í p ^ > y 7 $ o i ' T i é c & f c o T ^ t i i ^ L n í s ^ i o ^ g t t ' î î o 1Co # £ LT feII*§I: S£ • f i t c 1975 ^*'0 S7 > v ^ 5î 0 Ü^ÎgflfêLi L£ #\ M - t k t Z Z t £ S t Ä « , 1 ^ ® S tt N

IMH10

Contextual Info: Index Index 2SA1036K 69 2SA1037AK 73 2SA1514K 77 2SA1576A 73 2SA1577 69 2SA1579 77 2SA1727F5 81 2SA1759 85 2SA1774 73 2SA1797 89 2SA1807F5 92 2SA1834F5 96 2SA1862F5 100 2SA1870 104 2SA1900 106 2SC4617 169 2SC4649 160 2SC4672 201 2SC4713K 204 2SC4774 204 2SC4938 209

tc 144e

Abstract: ry 130-2 TZ 1148 413 a933s C2673 TA78 739 TZ 1148 mc 1302 L 930DT
Contextual Info: M H /T y p e Number List I' -y > v X £ /T ransistors 2S A785. 75 2S A 790. 78 2 S A 7 9 0 M .81

2SK1973

Abstract: d 5072 transistor 2S01766 2S02211 2s01664 2sb1516 2S01781K 2sc4912 2SA103G 2SK2307
Contextual Info: Transistor Quick reference I Laadad p P a g e lli Package-Application Vceo V * * y,CES * * *w CER Vn«w Application EM3 UMT 2SC4081LN 40 Low Noise I 50 25 60 Package | Part No. f 2SA1037AKLN(E) SMT / 2SA1774 \2 S C 4 6 1 7 120 2SC4723 /2SA 1576A V2SC3722K

BC517 "cross reference"

Abstract: 2n5401 2n3904 bc557 cross reference BC546 "cross reference" 2N5088 Cross Reference PMBT2369 2n2925 cross reference BC337 BC547 bc548b cross reference MPSa06 equivalent
Contextual Info: Philips Semiconductors Small-signal Transistors and Diodes Cross Reference Transistors PHILIPS GA TRANSISTORS CROSS REFERENCE COMPETITOR TYPE NUMBER COMPETITOR TYPE NUMBER PHILIPS-TYPE-No. PHILIPS-TYPE-No. 2N2925 ED1402D 2SA1759 PXTA92 2N3903 2N3904 2SA1774

2SA1885

Abstract: T147
Contextual Info: Transistors From very small EM3 type package to high power PSD package the power dissipation is equivalent to T0-220, Pc=35W transistors. EM3 • UMT • SMT Three types are available to allow the most suitable package depending on size specifications. Pc (mW)