2SB1197K Search Results

2SB1197KQ

Abstract: 2SB1197KR 2SB1197K 2SB1197K-R
Contextual Info: 2SB1197K -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SC-59 Low VCE sat .VCE(sat)≦-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A A L 3 3 MECHANICAL DATA

2SB1197K

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SB1197K TRANSISTOR PNP Unit : mm 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Power amplifier z MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter

Contextual Info: Transistors Low Frequency Transistor -32V, - 0.8A 2SB1197K •F e a t u r e s 1) •E x te rn a l dim ensions (Units: mm) LOW VcE(sat). VcE(sat) = —0 .5 V (Ic / I b = - 0 . 5 A / - 5 0 m A ) 2) Ic = - 0 . 8 A . 3) C om plem ents the 2 S D 1 7 8 1 K. 0 8 ± 0.1

2SB1197K

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SB1197K TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 200 mW (Tamb=25℃) 1. 02 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current

ahr TRANSISTOR

Abstract: ahr sot23
Contextual Info: 2SB1197K SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: Package:SOT-23 1 Low Vce(sat) Vce≤-0.5V (Ic/Ib= -0.5A/-50mA) (2) Ic= -0.8A (3) Complements the 2SD1781K

100MHZ

Abstract: 2SB1197K 2SD1781K VCBO-40V
Contextual Info: 2SD1781K NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: 1 Very Low Vce(sat) Vce<0.4V (Ic/Ib= 500mA/50mA) 1. (2) High current capacity in compact package (3) Complements the 2SB1197K Symbol Rating Unit Collector-Emitter Voltage Vceo

Contextual Info: Transistors Low Frequency Transistor *32V, *0.8A 2SB1197K FFeatures 1) Low VCE(sat). VCE(sat) x *0.5V (Ic / IB = *0.5A / *50mA) 2) IC = *0.8A. 3) Complements the 2SD1781K. FExternal dimensions (Units: mm) FStructure Epitaxial planar type PNP silicon transistor

Contextual Info: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the 2SB1197K. FExternal dimensions (Units: mm) FStructure

2SB1197K

Contextual Info: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors SOT-23-3L 2SB1197K TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 200 mW (Tamb=25℃) 1. 02 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current ICM: -800 mA

Contextual Info: h7 > £ /Transistors 2SB1197K 2 S R 1 1 Q 7 K Epitaxial Planar P N P Silicon Transistor 1£Ji j M ^ lt ilif f l/ L o w Freq. Power Amp. • W fiT f& H / D im e n sio n s U nit: mm 1) VCE (sat) If'Y' cf '-'o VcE (sat)S—0.5V (lc/lB=-0.5A / - 50mA) 2) lc= —800mA T'i>-So

2SB1197KGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SB1197KGP SURFACE MOUNT PNP Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE 3 (2) .055 (1.40) .047 (1.20) C (3)

100MHZ

Abstract: 2SB1197K 2SD1781K
Contextual Info: 2SD1781K NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: 1 Very Low Vce(sat) Vce<0.4V (Ic/Ib= 500mA/50mA) 1. (2) High current capacity in compact package (3) Complements the 2SB1197K Symbol Rating Unit Collector-Emitter Voltage Vceo

Contextual Info: 2SB1197K Transistor, PNP Features Dimensions Units : mm • available In SMT3 (SMT, SC-59) package • package marking: 2SB1197K; AH-*, where ★ is hFE code • 2SB1197K (SMT3) 1.9±0.2 low collector saturation voltage 0.96 a (2 )[ 2.4 V CE(sat) - “ ° - 5 v f o r

2SB1197K

Contextual Info: 2SB1197K PNP 3 2 1 SC-59 V CEO Value -32 -40 -5 -800 200 1.6 625 2SB1197K=AHR -1.0 -50 -50 -20 -4.0 WEITRON http://www.weitron.com.tw -32 -40 -5.0 -0.5 u -0.5 u 2SB1197K ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued) Characteristics

2SB1197K

Abstract: 2SD1781K T146
Contextual Info: 2SD1781K Transistors Medium Power Transistor 32V, 0.8A 2SD1781K zExternal dimensions (Unit : mm) zFeatures 1) Very Low VCE(sat). VCE(sat) = 0.1V(Typ.) ̈́IC / IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K. 2.9±0.2

NPN Transistor 8A

Abstract: Silicon NPN Epitaxial Planar Power Transistor 2SD1781K 2sb1197k NPN Silicon Epitaxial Planar Transistor SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE transistor Transistor npn 2SD178 t-04 transistor
Contextual Info: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the 2SB1197K. FExternal dimensions (Units: mm) FStructure

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SB1197KPT SURFACE MOUNT PNP Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE 3 (2) .055 (1.40) .047 (1.20) C (3)

2SB1197K

Abstract: 2SD1781K T146
Contextual Info: 2SB1197K Transistors Low Frequency Transistor 32V, 0.8A 2SB1197K zExternal dimensions (Unit : mm) 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (3) All terminals have the same dimensions 0.4 +0.1 −0.05 zStructure Epitaxial planar type PNP silicon transistor

2sb transistor

Contextual Info: 2SB1197K Transistor, PNP Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SB1197K; A H * , where ★ is hFE code • 2SB1197K (SMT3) 1 9 *0 2 0 06 low collector saturation voltage 2 Ic/I b = “ 0.5 A/—50 mA

Q2SB1197k

Abstract: 2SB1197K 9962
Contextual Info: SPICE PARAMETER 2SB1197K by ROHM TR Div. * 2SB1197K PNP BJT model * Date: 2006/12/15 .MODEL 2SB1197K PNP + IS=300.00E-15 + BF=238.66 + VAF=100 + IKF=7.9962 + ISE=300.00E-15 + NE=1.8179 + BR=24.969 + VAR=100 + IKR=8.6844 + ISC=20.673E-12 + NC=1.4876 + NK=1.2295

Contextual Info: 2SD1781K Transistors Medium Power Transistor 32V, 0.8A 2SD1781K zExternal dimensions (Unit : mm) zFeatures 1) Very Low VCE(sat). VCE(sat) = 0.1V(Typ.) ̈́IC / IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K. 2.9±0.2

Contextual Info: 2SB1197K Transistors Low Frequency Transistor 32V, 0.8A 2SB1197K zExternal dimensions (Unit : mm) 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (3) All terminals have the same dimensions 0.4 +0.1 −0.05 zStructure Epitaxial planar type PNP silicon transistor

Contextual Info: Product specification 2SB1197K SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 -0.5V IC / IB= -0.5A / -50mA . 3 0.4 Low VCE sat .VCE(sat) 1 0.55 PNP silicon transistor +0.1 1.3-0.1 +0.1 2.4-0.1 IC = -0.8A. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

marking PB SOT-23

Contextual Info: WILLAS FM120-M+ 2SB1197KxLT1 THRU Low Frequency Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.