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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1773 Silicon NPN triple diffusion planar type darlington Unit: mm 4.2±0.2 φ 3.1±0.1 14.0±0.5 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 120
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2SB1193
Abstract: 2SD1773
Contextual Info: Power Transistors 2SD1773 Silicon NPN triple diffusion planar type Darlington For midium speed switching Complementary to 2SB1193 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage
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2SB1193
Abstract: 2SD1773 RELAY MATSUA
Contextual Info: Power Transistors 2SD1773 Silicon NPN triple diffusion planar type darlington Unit: mm 14.0±0.5 • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw • Absolute Maximum Ratings TC = 25°C
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2SD1773
Abstract: 2SB1193
Contextual Info: SavantIC Semiconductor Product Specification 2SD1773 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·DARLINGTON ·Complement to type 2SB1193 ·High speed switching APPLICATIONS ·For medium speed switching applications PINNING PIN DESCRIPTION
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Contextual Info: Power Transistors 2SD1773 2SD1773 Silicon NPN Triple-Diffused Planar Darlington Type Medium Speed Switching Complementary Pair with 2SB1193 • Package Dimensions U n it ' mm 4.4m ax. 1 0 .2 m a x . ■ Features 5 .7 m a x . 2.9 max • H ig h D C c u r r e n t g ain Iife
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2SB1193
Abstract: 2SD1773
Contextual Info: JMnic Product Specification 2SB1193 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・High speed switching ・DARLINGTON ・Complement to type 2SD1773 APPLICATIONS ・For medium speed switching applications PINNING
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2sb1193o-220fa2sd1773-80ma+2-120v-100v
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2SD1796
Abstract: SC64 2SB1204 2SD1802 2SD1771 2SD1771A 2SD1772 2SD1772A 2SD1808A 2SD1774
Contextual Info: - 266 - Ta=25Tî, *EPfíTc=25<C M 2SD1771 2SD1771A 2SD1772 2SD1772A 2SD1773 2SD1774 2SD1774A 2SD1775 2SD1775A 2SD1776 2SD1776A 2SD1777 2SD1778 2SD1778A 2SD1779 2SD1780 2SD1781K 2SD1782K 2SD1783 2SD1784 ¿ÒUi föO 2SD1787 2SD1796 2SD1797 2SD1799 2SD1800
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2sd17712sd1771a2sd17722sd1772a+102sd17732sd17742sd1774a2sd1796sc-672sd1797sc642sb12042sd18022sd1808a
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2SB1193
Abstract: 2SD1773 IB500
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1773 Silicon NPN triple diffusion planar type darlington Unit: mm 10.0±0.2 4.2±0.2 5.5±0.2 M Di ain sc te on na tin nc ue e/ d 16.7±0.3 • Features Collector-base voltage (Emitter open)
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2SB1193
Abstract: 2SD1773
Contextual Info: Power Transistors 2SD1773 Silicon NPN triple diffusion planar type Darlington For midium speed switching Complementary to 2SB1193 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage
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Contextual Info: 2SD1773 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)8 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)120 h(FE) Min. Current gain.1k
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2SB1193
Abstract: 2SD1773 pnp 4A switching
Contextual Info: SavantIC Semiconductor Product Specification 2SB1193 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·High speed switching ·DARLINGTON ·Complement to type 2SD1773 APPLICATIONS ·For medium speed switching applications
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2SB1193
Abstract: 2SD1773
Contextual Info: Inchange Semiconductor Product Specification 2SB1193 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・High speed switching ・DARLINGTON ・Complement to type 2SD1773 APPLICATIONS ・For medium speed switching applications
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2SB1193
Abstract: 2SD1773
Contextual Info: Power Transistors 2SD1773 2SD1773 Silicon NPN Triple-Diffused Planar Darlington Type Medium Speed Switching Complementary Pair with 2SB1193 • Features • H igh DC c u r re n t gain ■ Package Dimensions 2.9 max Iif e • High s p e e d sw itch in g
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Darlington pair IC high current
Abstract: 2SB1193 2SD1773
Contextual Info: Power Transistors 2SBM93 2SB1193 Silicon PNP Epitaxial Planar Darlington Type Package Dimensions Medium Speed Switching Complementary Pair with 2SD1773 • Features U n i t ! mm 4 .4 m a x . 1 0 .2 m a x 5 .7 m a x . 2.9m ax. • High DC current gain Ii f e
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibilixp08081xp08546xp0a554xp0d873+13xp0d874xp0d875xp0e5542sc5929mn1280transistor 2sc59293sk1293sk972sc59282pg0092sc5929 equivalent2sk40002sd965 transistor replacement guide
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nec 2sc3157
Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
Contextual Info: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419
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2sd16602sd1198a2sd16222sd1631+132sc28832sd14062sc32992sd14122sd1296nec 2sc31572sd9992sd13172sc36942sc37602sd20612sd2239nec 1678
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2SC3444
Abstract: 2sb2025 d1830 2SD1963 2sd1633 2SD1292 2SD1612 2sd1587 2sd1932 2sd1944
Contextual Info: « Type No. 2SD 1 586 2SD 1 587 0^ 2SD 1588 f 2SD 1 589 s 2SD 1590 2SD 1592 2SD 1593 ^ 250 1594 ^ 2SD 1595 ✓ 2SD 1598 2SÖ 1599 2SD 1600 2S0 1601 tt M anuf. € a • B B 1a B m. b 2SC4500L/S a b B tL fö T B tL B tL i CD ^ 2SD 1612 2SD 1613 2SD 1 6 1 4
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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stvdst-01cat22stk411-230estk411-220e+8stk442-130pal005aupc2581vfn1016strg6153rsn313h25stk407-070bmcz3001d
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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2SB1193
Abstract: 2SD1773
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1193 Silicon PNP epitaxial planar type darlington Unit: mm 10.0±0.2 4.2±0.2 5.5±0.2 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current
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B1548
Abstract: 2SB1299A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200
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t0-220o-220f2sb954/a2sb1052+82sd14802sd1265/ao-220et0220d2sb1169/a2sb1170b15482sb1299a
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2sd2520
Abstract: 2SD2501 2SD2502 2sD2503 2SD1327 2SD1755
Contextual Info: Transistors Selection Guide by Applications and Functions •Silicon Power Transistors (continued) Applica tion Func tions V ceo (V) lc (A) Package (No.) VcE(sat) typ. (V) lc Ib TO-220(a) (D52) T0-220F(D55) T0-220E(D59) T0-220D(D58) N Type (D42) PNP
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o-220t0-220ft0-220et0-220d+112sd17192sd1775/a2sd17552sb11952sd16342sd1336/a2sd25202sd25012sd25022sd25032sd1327
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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xp06501txp06531xp06545xp0a554+13xp0d873xp0d874xp0d8752sc59362sc6073panasonic transistor 2sc60732sc5929mn1280transistor 2sc60732sc5936 equivalent2sc6074transistor 2sc59292sc5928
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