2SC3931 Search Results

2SC3931

Contextual Info: Transistor 2SC3931 Silicon NPN epitaxial planer type For high-frequency amplification 0.425 Unit: mm +0.1 0.3Ð0.0 • Features 5û 1 2 0.2±0.1 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and

4288A

Abstract: 2sc3936 hitachi 4269 2SC4903 2SC3874 2SC3995 2SC4186 2SC3931 2SC3210 2SC4083
Contextual Info: - 18 6 - Si € Type No. tt € Manuf. 1nJ 1“ ^ £ tN 2SC 4247 2SC 4248 2SC 4249 H * SANYO a s£ % TOSHIBA NEC ± a FUJITSU % T MATSUSHITA 2SC4404 2SC4186 2SC4903 2SC3934 2SC4404 2SC4186 2SC4264 2SC3934 2SC4263 2SC3931 2SC4400 2SC 4250 tL HITACHI H £ MITSUBISHI

2SC3931

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3931 Silicon NPN epitaxial planar type For high-frequency amplification (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • Optimum for RF amplification of FM/AM radios

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3931G Silicon NPN epitaxial planar type For high-frequency amplification • Features ■ Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT

BFE 75A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3931 Silicon NPN epitaxial planar type For high-frequency amplification (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 5˚ M Di ain

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3931 Silicon NPN epitaxial planar type For high-frequency amplification (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • Optimum for RF amplification of FM/AM radios

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3931 Silicon NPN epitaxial planar type For high-frequency amplification (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 5˚ d p

2SC3931G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3931G Silicon NPN epitaxial planar type For high-frequency amplification • Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3931G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification • Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT

2SC3931

Contextual Info: Transistor 2SC3931 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 2.1±0.1 • Features +0.1 0.3–0 0.65 1.3±0.1 0.65 1 3 2 Symbol Ratings Unit VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V

2SC3931

Contextual Info: Transistor 2SC3931 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 2.1±0.1 • Features +0.1 0.3–0 0.65 1.3±0.1 0.65 1 3 2 Symbol Ratings Unit VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V

2SC3931

Contextual Info: Transistors 2SC3931 Silicon NPN epitaxial planar type For high-frequency amplification 0.425 Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • Optimum for RF amplification of FM/AM radios • High transition frequency fT

2SC3931

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3931 Silicon NPN epitaxial planar type For high-frequency amplification (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 1.25±0.10

2SC3931G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3931G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification • Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

4946

Abstract: me 4946 4947 2SC5020 an 4953 4953 2SC3124 2SC3310 2SC4639 4336
Contextual Info: - m % a « T y p e No. Manuf. = æ SANYO 2SC 4930 2SC 4931 z 2SC 4932 S 2SC 4933 2SC 4934 ^ 2SC 4935 3L 23C 4336 — 2SC 4940 — f 2 :v- NEC ÏZ. HITACHI s ± il FUJITSU ta t M ATSUS H I T A 2SC4838 ZdLOUUO 2SC4808 2SC4805 2SD2228 2SD1820 2SC3440 2SC4211

2SC1571

Abstract: 2sc3828 4088B 2SC3904 4082 mitsubishi 2SC3609 2SC4082 2SC4161 K 4087 2SC4246
Contextual Info: tt SS! £ T y p e No. € Manuf. ft H SANYO 3R *£ TOSHIBA m b NEC Ä ± àfi FUJITSU fâ T M ATSUS H I T A Z £ MITSUBISHI □ — A ROHM 2SC4082 2SC4259 2SC 4068 tö 2SC 4069 h UN2217 DTCÎ 2 4 G K h UN4217 DTC124GS 2SC 4070 2SC 4071 2SC 4073 n ft =- ft

2SC3532

Abstract: 2SC3533 2SC3082K 2SC3170 2SC4242 2SC4212 25C2335 2SC3077 2SC3531 2SC3535
Contextual Info: - M % it T y p e No. 2 SC 4 2 1 0 2SC £ Manuf. H b £ SANYO TOSHIBA = n 2SC 4212 ^ te T 2SC 4213 / M £ 2SC 4215 > 2SC 4216 ^ 2SC 4217 J = n 2SC 4218 y H & ÌH 2SC 4219 2SC2621 2SC4181 J 2SC 4221 J 2SC3425 2SC2688 ± FUJITSU ÒS te IE 2SC4400 2SC4415 2SC4178

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

Contextual Info: Multi Chip Discrete UP05C8B Silicon NPN epitaxial planar type Tr Silicon epitaxial planar type (CCD load device) 5 4 M Di ain sc te on na tin nc ue e/ d 1.20±0.05 • Features  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Collector-base voltage

CCD MARKING

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP05C8B Silicon NPN epitaxial planar type (Tr) Silicon epitaxial planar type (CCD load device) 5 4 1.20±0.05 • Features 1 5° 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20)

ccd marking

Contextual Info: Composite Transistors UP05C8B Silicon NPN epitaxial planar type Tr Silicon epitaxial planar type (CCD load device) 5 4 1.20±0.05 • Features 1 5° 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20)  Two elements incorporated into one package (Tr + CCD load device)

2SC3931G

Abstract: UP05C8B UP05C8BG
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete UP05C8BG Silicon NPN epitaxial planar type (Tr) Silicon epitaxial planar type (CCD load device) For CCD output circuits • Package  Two elements incorporated into one package (Tr + CCD load device)