2SC2411K Search Results

transistor smd marking CQ

Abstract: transistor smd marking CR transistor cr marking transistor smd marking CQ MARKING SMD npn TRANSISTOR transistor smd cr transistor CR NPN 2SC2411K
Contextual Info: Transistors SMD Type Medium Power Transistor 2SC2411K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 NPN silicon transistor 0.55 Low VCE sat . Optimal for low voltage operation. +0.1 1.3-0.1 +0.1 2.4-0.1 High ICMax. ICMax. = 0.5A 2 +0.1 0.95-0.1

Contextual Info: 2SC2411K NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 32 Volts POWER 225mW • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • Lead free in comply with EU RoHS 2011/65/EU directives. • Green molding compound as per IEC61249 Std. . Halogen Free

Contextual Info: Transistors Medium Power Transistor 32V, 0.5A 2SC2411K/2SC4097/2SC1741S •F e a tu re s 1 ) H ig h ►External d im e n s io n s (U nits: m m ) IcMax. 2SC2411K IcMax. = 0 .5 m A 2) L o w VcE(sat). O p tim a l f o r lo w v o lt ­ a g e o p e ra tio n .

2SA1036K

Abstract: 2SA1577 2SA854S 2SC1741S 2SC2411K 2SC4097 SC-72 T146
Contextual Info: 2SC2411K / 2SC4097 / 2SC1741S Transistors Medium Power Transistor 32V, 0.5A 2SC2411K / 2SC4097 / 2SC1741S !External dimensions (Units : mm) 2SC2411K 2SC4097 1.1+0.2 −0.1 1.9±0.2 2.0±0.2 0.8±0.1 2.8±0.2 (3) (3) !Structure Epitaxial planar type NPN silicon transistor

transistor 301

Contextual Info: 2SC2411K 2SC4097 Transistor, NPN Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) package • package marking: 2SC2411K, 2SC4097; C ^, where ★ is hFE code • large collector current • suitable for low-voltage operations

2SA1036K

Abstract: 2SC2411K T146
Contextual Info: 2SC2411K Transistors Medium Power Transistor 32V, 0.5A 2SC2411K zExternal dimensions (Units : mm) 2SC2411K 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (2) 1.6+0.2 −0.1 (1) zStructure Epitaxial planar type NPN silicon transistor 0 ~ 0.1 2.8±0.2

TRANSISTOR 246

Abstract: 2SC1741S 2SC4097 "Power transistor" 2SC24 NPN Silicon Epitaxial Planar Transistor 2SA1036K 2SA1577 2SA854S 2SC2411K
Contextual Info: Transistors Medium Power Transistor 32V, 0.5A 2SC2411K / 2SC4097 / 2SC1741S FFeatures 1) High Ic(Max.) IC(Max.) = 0.5A 2) Low VCE(sat). Ideal for low voltage operation. 3) Complements the 2SA1036K / 2SA1577 / 2SA854S. FExternal dimensions (Units: mm) FStructure

2SC2411K

Contextual Info: 2SC2411K SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * * TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Complement to 2SA1036K Package:SOT-23 Collector Current :Ic= 500mA High Total Power Dissipation :Pc=225mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃

2SA1036K

Abstract: 2SA1577 2SA854S 2SC1741S 2SC2411K 2SC4097
Contextual Info: 2SC2411K / 2SC4097 / 2SC1741S Medium Power Transistor 32V, 0.5A 2SC2411K / 2SC4097 / 2SC1741S •Features 1) High ICMax. lcMax.= 0.5mA •External dimensions (Units : mm) 2) Low VcBsat). Optimal for low voltage operation.

Contextual Info: 2SC2411K NPN GENERAL PURPOSE SWITCHING TRANSISTOR 32 Volts POWER 225mW SOT-23 Unit：inch mm • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • / 

c102 TRANSISTOR

Abstract: 2N3904 A41 transistor c102 c101 TRANSISTOR TRANSISTOR 246 transistor c101 2n2222+331+transistors 2SC4043 TRANSISTOR 618 609 transistor
Contextual Info: Transistors Medium Power Transistor *32V, *0.5A 2SA1036K / 2SA1577 / 2SA854S FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FExternal dimensions (Units: mm) FStructure

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC2411K TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9 Collector current

2SC2411K

Contextual Info: 2SC2411K NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 32 V Collector-Base Voltage VCBO 40 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous IC 500 mA

2SC2412KLN

Abstract: 2SC2494 2SC2431 HF 450 2SC2442 2SC2494-MA 2SC2410S 2SC2411K 2SC2412K 2SC2427
Contextual Info: - 124 - w X Ë fà Ta=25U *EP(áTc=25'G m 2SC2410S 2SC2411K 2SC2412K 2SC2412KLN 2SC2413K 2SC2427 2SC2428 2SC2429 2SC2429A 2SC2430 2SC2431 2SC2432 2SC2433 2SC2434 2SC2437 2SC2438 2SC2440 2SC2442 2SC2443 2SC2458 2SC2458L 2SC2459 2SC2462 2SC2463 2SC2464 2SC2465

Contextual Info: WILLAS FM120-M+ 2SC2411KxLT1 THRU Medium Power Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

Contextual Info: 2SC2411K / 2SC4097 / 2SC1741S Transistors Medium Power Transistor 32V, 0.5A 2SC2411K / 2SC4097 / 2SC1741S !External dimensions (Units : mm) 2SC2411K 2SC4097 1.1+0.2 −0.1 1.9±0.2 2.0±0.2 0.8±0.1 2.8±0.2 (3) (3) !Structure Epitaxial planar type NPN silicon transistor

2SA1036K

Abstract: 2SC2411K T146
Contextual Info: Medium Power Transistor 2SA1036K Dimensions Unit : mm Features 1) Large IC. ICMAX. = -500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K. 2SA1036K 2.9±0.2 1.9 ±0.2 1.1 +0.2 -0.1 ± 0.8± 0.1 0.95 0.95 1.6 +0.2 -0.1

transistor cr marking

Abstract: marking CQ 2SC2411K
Contextual Info: 2SC2411K SOT-23-3L 2SC2411K TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9 Collector current 500 mA ICM: Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range

2SC2494

Abstract: 2SC2553 2SC2431 2SC2534 2SC2495 2SC2430 2SC2443 2SC2530 2sc2555 2SC2410S
Contextual Info: - 124 - w X Ë f à m 2SC2410S 2SC2411K 2SC2412K 2SC2412KLN 2SC2413K 2SC2427 2SC2428 2SC2429 2SC2429A 2SC2430 2SC2431 2SC2432 2SC2433 2SC2434 2SC2437 2SC2438 2SC2440 2SC2442 2SC2443 2SC2458 2SC2458L 2SC2459 2SC2462 2SC2463 2SC2464 2SC2465 2SC2466 2SC2467 2SC2468

Contextual Info: Transistors Medium Power Transistor *32V, *0.5A 2SA1036K / 2SA1577 / 2SA854S FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FExternal dimensions (Units: mm) FStructure

Contextual Info: 2SC2411K/2SC4097 / T ransistors 2SC2411K NPN 1> h 7 > y ^ $ 2SC4097 Epitaxial 4 '1 1 ^J*lllli ffl/M e d iu m Power Amp Planar Super/Ultra M ini-M old NPN Silicon Transistors y ‘J - • ÿ l-JfÎT Ü ill/ 'D im e n sio n s Unit : mm h 1) lc M A X = 5 0 0 m A £ ; * : £ l ' o

2SC2411KPT

Abstract: 2SC2411KP
Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SC2411KPT SURFACE MOUNT Medium Power NPN Transistor VOLTAGE 32 Volts CURRENT 0.5 Ampere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. SOT-23 * Low saturation voltage V * Low cob. Cob=6.0pF(Typ.) CE(sat)=0.4V(max.)(I C=500mA)

TRANSISTOR C 2026

Abstract: 100MHZ 2SC2411K Marking 241
Contextual Info: 2SC2411K NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 32 Volts POWER 225mW FEATURES • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA

Contextual Info: 2SC2411KFRA 2SC2411K Transistors Medium Power Transistor 32V, 0.5A AEC-Q101 Qualified 2SC2411K 2SC2411KFRA zExternal dimensions (Units : mm) 2SC2411KFRA 2SC2411K 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (2) 1.6+0.2 −0.1 (1) zStructure Epitaxial planar type