2SB920L Search Results

2SB920L

Abstract: 2SD123 circuit 17961
Contextual Info: Ordering number:1796B PNP/NPN Epitaxial Planar Silicon Transistors 2SB920L/2SD1236L 80V/5A Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. unit:mm

PE 7058

Abstract: circuit 17961
Contextual Info: Ordering num ber: EN 1796B 2SB920L/2SD1236L N0.1796B PNP/NPN Epitaxial P lan ar Silicon Transistors SAMYO i 80V/5A Switching Applications A pp licatio n s • Relay drivers, high-speed inverters, converters, and other general high-current switching applications.

2SB920L

Abstract: 2SD1236L
Contextual Info: Inchange Semiconductor Product Specification 2SD1236L Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Complement to type 2SB920L ·Low collector saturation voltage ·Large current capacity. APPLICATIONS ·Relay drivers,high speed inverters,

2SB920L

Abstract: 2SD1236L
Contextual Info: SavantIC Semiconductor Product Specification 2SD1236L Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB920L ·Low collector saturation voltage ·Large current capacity. APPLICATIONS ·Relay drivers,high speed inverters,

2SB1013

Abstract: 2S897 2SB1315 2SA1307 2SB1306 2sb631 hitachi 2SB747 2SA1431 1318J 2SB679
Contextual Info: € Type No. it € Manuf. m = SANYO 3? £ TOSHIBA 2SB679 a NEC SL HITACHI M ± ii FUJITSU & T MATSUSHITA 2SB 1286 ^ □ — A 2SB884 2SB 1287 □ — A 2SB1226 2SB 1288 2SB1131 2SA1431 2SB 1 289 fc' T □ — A 2SB920L 2SB753 2SB946 2SB 1290 _ □ — A 2SB1018

2SB920

Abstract: 2SB920L 17961 2SD123 circuit 17961
Contextual Info: O rdering number: EN 1796B < 2SB920L/2SD1236L N0.1796B PNP/NPN Epitaxial P lanar Silicon Transistors SAÈlYO i 80V/5A Switching Applications A pplications • Relay drivers, high-speed inverters, converters, and other general high-current switching applications.

Contextual Info: Ordering number:1796B PNP/NPN Epitaxial Planar Silicon Transistors 2SB920L/2SD1236L 80V/5A Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. unit:mm

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SB816

Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
Contextual Info: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3

2SB557 TOSHIBA

Abstract: 2SB1314 toshiba 2sb554 2SB546A 2SB596 2sa483 2SB554 2SB54 2SB557 2SB857
Contextual Info: 564 565 . 566 y 566AK 2SB 566K 2SB 567 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 568 569 „ 510 571 572 „ 573 ^ 574 575 •576 ' 2SB 577 , 2SB 578 ^ 2SB 579 2SB 2SB 2SB 2SB 2SB 2SB 580581 582 583 584 585 2SB 2SB 2SB 2SB 2SB 2SB 586 595 596 598 599 600 2SB 601

2SB1267

Contextual Info: Continued from previous page Absolute maximum ratings Type No. Package type Electrical characteristics Ta = 25 "C VCB(sat) max @ 1C •IB Applications VCBO (V) VCEO to (V) (A) PC (W ) (2 ) VCE(sat) fr @ Vce hre @ V C E lC max (mV) 1C (A) (mA) te hFE XSF

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

2SD313

Abstract: transistor 2sC3781 2SD1159 2sa128
Contextual Info: SAUYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s * Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device *More collector dissipation available when a device alone is used

SB145

Abstract: 2sd1159 hc/2SB824 transistor 2sb507 sanyo 2Sd1666 2sa128 2SB824 transistor 2sd313
Contextual Info: SAfíYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s ♦ Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device ♦ More collector dissipation available when a device alone is used

2sa128

Contextual Info: í?/píVO Low-Saturat ion Vol tage Seri es T0“220, MF, ML Pack g > A p p l i c a t i o n s ♦ Relay drivers. * High-speed inverters. * Conve r te r s . * H igh-cu r ren t switchinf! F e a t u r e s * Low VCE(sat). * Highly resistant to breakdown because of wide ASO. * Fast switching

2SB1205

Abstract: 2S81119 2Sk222 2sa128
Contextual Info: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf

2SD1206

Abstract: 2SD1214 2SD1206 R 2SB889 2sn121 2SD1198 2SD1198A 2SD1199 2SD1200 2SD1205A
Contextual Info: - 2 38 - Ta=25'C. *EP(áTc=25‘ C M 03 tr -/N u •CEO (V) 2SD1198 (V) (A) [*EPfátyp{¡f] VcB (V) (min) (max) Ic/ I Vc e (V) (max) (V) e (A) (V) 4000 40000 10 1 1.8 2.2 1 i 0. 1 45 4000 40000 10 1 1.8 2.2 1 0. 001 0.1 20 400 2000 10 0. 002 0.2 0.01 0. 001

2SB927

Abstract: 2SB930 2SB813 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M
Contextual Info: - 66 - T a = 2 5 cC , *EÎ]ÎÏTc=25<C m z 2SB903 2SB904 tt £ m m 2SB905 2SB906 m m. VcBO VcEO (V) (V) Ic(DC) (A) Pc Pc* w (W) M ICBO (max) Ä) (u Vro (V) M (min) ft W (max) te Vcp (VÍ (Ta=25T;) Ic /1 e (A) [tEPIitypffi] (max) (V) le (A) (V) ÏB Ó O

2SA933S

Abstract: 2SB737 2SA1302 TOSHIBA 2sb1425 2SA1286H 2SA644 2SB873 2SA1782 2SA1757 2sa1175
Contextual Info: 27 - 55 € Type No. tt € Manuf. B SANYO TOSHIBA 2SA 1285 - H # 2SA1208 2SA1145 2SA 1285A H « 2SA1208 2SA1020 2 S A 1286 , H 2 S A 1287 J 2SA1770 * 2 S A 1288 2SA 1289 , 2 S A 1290 ✓ & T MATSUSHITA — A ROHM 2SA1124 2SA1282 2SA1124 2SB1212 2SB1068 2SB819

Nec K 872

Abstract: 2SA1184 2SB1306 2SB1479 2SA1015 2SB873 2SB1086 2SB548 2SB1480 2sb601
Contextual Info: 55 - s « T y p e No. tt € Manuf. m = SANYO JÎÏ TOSHIBA m a NEC ÍL S HITACHI Ä ± àfi F U JITSU fâ T MATSUS H I T A ^ ü MITSUB I S H I □ — A ROHM 2 SB S58 ÎL 2SB824 2SB596 2SB703 2SB942 2SB1334 2SB 859 îl 2SB920 2SB595 2SB703A 2SB942A 2SA1634

2SB1013

Abstract: 2SA934 2sb1370 nec 1026 2S897 2SB1067 2SD2238 2SA1243 2SB1041 2SB564
Contextual Info: 60 - $! tt « Type No. 2SB 1013 v 2SB 1014 ^ 2S8 1015 - 2SB 1016 , 2SB 1017 2SB 1018 2SB 1019 « Manuf. -_ 3IC SANYO H. S S TOSHIBA b m NEC ±L HITACHI m ± FU JITSU i3 T fc' MATSUSHITA = m M IT SU B ISH I □ - Jx ROHM 2SA1160 2SB1068 2SB976 2SB1426 2SA1020

2SB1267

Contextual Info: C o n tin u e d fro m p re v io u s p a g e Absolute maximum ratings Device Package type Electrical characteristics Ta = 25 °C VcHsat) max @ lc - I b ; Applications VcBO (V) VCEO (V) lc (A) Pc (W) Ti (°C) ; VcE(sat) max (mV) lc (A) Ib (mA) ! It @ VCE •te