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    2SD1212 Search Results

    2SD1212 Datasheets (9)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SD1212
    Sanyo Semiconductor High-current switch Original PDF 121.4KB 4
    2SD1212
    Unknown Japanese Transistor Cross References (2S) Scan PDF 33.63KB 1
    2SD1212
    Unknown Cross Reference Datasheet Scan PDF 41.78KB 1
    2SD1212
    Unknown The Transistor Manual (Japanese) 1993 Scan PDF 88.42KB 2
    2SD1212
    Unknown Transistor Substitution Data Book 1993 Scan PDF 30.68KB 1
    2SD1212
    Unknown NF/S-L lo-sat, Silicon NPN Transistor Scan PDF 107.88KB 3
    2SD1212
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 44.36KB 1
    2SD1212
    Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF 160.82KB 1
    2SD1212S
    Sanyo Semiconductor PNP/NPN Epitaxial Planar Silicon Transistors 30V / 12A Scan PDF 115.25KB 3
    SF Impression Pixel

    2SD1212 Price and Stock

    onsemi

    onsemi 2SD1212R

    Trans BJTs Single 30V 12A TO-220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SD1212R 252 1
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    • 1000 $0.72
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    Vyrian 2SD1212R 7,585
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    2SD1212 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SD1212

    Abstract: 2SB903
    Contextual Info: SavantIC Semiconductor Product Specification 2SD1212 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage ·Large current capacity. ·Complement to type 2SB903 APPLICATIONS ·Suitable for relay drivers, high-speed


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    2sd1212o-2202sb903 PDF

    Contextual Info: Ordering num ber: EN990C I 2SB903/2SD1212 N 0.99OC I PNP/NPN Epitaxial Planar Silicon Transistors SAiWO 30V/12A High-Speed Switching Applications I APPLIC ATIO N S • Suitable fo r relay drivers, high-speed inverters, converters, and other general large-current switching applications


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    en990c2sb903/2sd12120v/12a2sb903+4d251mh4067ki/3075ki2sb903/2sd PDF

    2SB903

    Abstract: 2SD1212 6 pin power switching ic to220
    Contextual Info: JMnic Product Specification 2SB903 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Large current capacity. ・Complement to type 2SD1212 APPLICATIONS ・Suitable for relay drivers, high-speed inverters,converters, and other genral


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    2sb903o-2202sd12126 pin power switching ic to220 PDF

    2sdi2

    Abstract: d1212 2SB903 2SD1212
    Contextual Info: Ordering number: EN990C I SA\YO i _PNP/NPN Epitaxial 2SB903/2SD1212 Planar Silicon Transistors NO.990C 30V/12A High-Speed Switching Applications A P P L IC A T IO N S • Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching applications


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    en990c2sb903/2sd12120v/12a2sb903+32sdi2d12122sd1212 PDF

    2SB903

    Abstract: 2SD1212 6 pin power switching ic to220
    Contextual Info: SavantIC Semiconductor Product Specification 2SB903 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage ·Large current capacity. ·Complement to type 2SD1212 APPLICATIONS ·Suitable for relay drivers, high-speed


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    2sb903o-2202sd12126 pin power switching ic to220 PDF

    2SB903

    Abstract: 2SD1212
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB903 DESCRIPTION •High Collector Current: IC= -12A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -5A ·Complement to Type 2SD1212 APPLICATIONS ·Designed for relay drivers, high-speed inverters, converters,


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    2sb9032sd1212 PDF

    2SD1212

    Abstract: 2SB903
    Contextual Info: Ordering number:ENN990C PNP/NPN Epitaxial Planar Silicon Transistors 2SB903/2SD1212 30V/12A High-Speed Switching Applications Applications Package Dimensions • Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching


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    enn990c2sb903/2sd12120v/12a2010c+3o-220ab2sb9032sd1212 PDF

    sc 4145

    Abstract: NEC 4164 2SC4116 2SC4667 2SC4145 2SC4211 c3503 2sc4153 2SC3170 rohm 4157
    Contextual Info: - m « M an u f. u— A m ED 2SC 4148 / 2SC 4149 2SC 4150 S 2SC345Ö n— A 2SC35Ö3 ifim T C 2SC3254 2SC3255 2SD1212 S t^ t c 2SC 4 1 5 1 X 2SC 4 1 5 3 / 2SC 4154 v-y'ry h m z m 4155 2SC 4157 —' 2SC 4 1 5 9 J M S = 2SC 4160 2SC 4 1 6 1 2SC 4162 = Z ft ft


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    2sc4212sc41162sc41772sc3153+142sc35352sc47432sd17382sc47422sc3450sc 4145nec 41642sc46672sc41452sc4211c35032sc41532sc3170rohm 4157 PDF

    2SB903

    Abstract: 2SD121
    Contextual Info: Ordering number:990C PNP/NPN Epitaxial Planar Silicon Transistors 2SB903/2SD1212 30V/12A High-Speed Switching Applications Applications Package Dimensions • Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching


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    2sb903/2sd12120v/12a2010co-220ab+3sc-462sb9032sd121 PDF

    2SB903

    Abstract: 2SD1212 ge to220 transistors
    Contextual Info: Inchange Semiconductor Product Specification 2SB903 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Large current capacity. ・Complement to type 2SD1212 APPLICATIONS ・Suitable for relay drivers, high-speed


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    2sb903o-2202sd1212ge to220 transistors PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b PDF

    2SD2334

    Abstract: 2sc4814 2SD2076 2216y 2SD1546 2sd2190 2SD1930 2SD1755 2sc2562 2SC4062
    Contextual Info: - m. £ € Manuf. T y p e No. 2 SD 2174 fâ 2SD 2175 □— A 2SD 2176 - # h SANYO T 2SC4488 M 3E TO S H I B A m B NEC 2SC3677 2SD1593 2SC3665 2SD1312 B HITACHI ÎL * ± a FU JITSU tö T MATSUS H I T A z m MITSUBISHI T 2SD 2185 fe' T 2S0 2186 □— A 2SD 2187


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    2sd21742sd21752sd21762sd2177+152sd21852sd21862sd21872sd21882sd21892sd21902sd23342sc48142sd20762216y2sd15462sd19302sd17552sc25622sc4062 PDF

    2SB1267

    Contextual Info: Continued from previous page Absolute maximum ratings Type No. Package type Electrical characteristics Ta = 25 "C VCB(sat) max @ 1C •IB Applications VCBO (V) VCEO to (V) (A) PC (W ) (2 ) VCE(sat) fr @ Vce hre @ V C E lC max (mV) 1C (A) (mA) te hFE XSF


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    2sc47272sc47282sc47292sd1235+5t02202sdi236l2sd1237l2sa14692sb1267 PDF

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


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    mk135mk136mk137mk138+16mk139mk140mk142mk145mk155157krk2645k4005u664bmosfet k4005mb8719transistor mosfet k4004sn16880nstk5392str451bc417 PDF

    2SD313

    Abstract: transistor 2sC3781 2SD1159 2sa128
    Contextual Info: SAUYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s * Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device *More collector dissipation available when a device alone is used


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    t0-220mlt0-2202sa14692sc3746+102sa14702sc37472sa14712sc37482sb11342sd16672sd313transistor 2sc37812sd11592sa128 PDF

    SB145

    Abstract: 2sd1159 hc/2SB824 transistor 2sb507 sanyo 2Sd1666 2sa128 2SB824 transistor 2sd313
    Contextual Info: SAfíYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s ♦ Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device ♦ More collector dissipation available when a device alone is used


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    t0-220mlt0-2202sa14692sc3746+142sa14702sc37472sa14712sc37482sb11342sd1667sb1452sd1159hc/2sb824 transistor2sb507 sanyo2sd16662sa1282sb824 transistor2sd313 PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    t258-omifax062sc1442sd466+12sc5266 PDF

    2sa128

    Contextual Info: í?/píVO Low-Saturat ion Vol tage Seri es T0“220, MF, ML Pack g > A p p l i c a t i o n s ♦ Relay drivers. * High-speed inverters. * Conve r te r s . * H igh-cu r ren t switchinf! F e a t u r e s * Low VCE(sat). * Highly resistant to breakdown because of wide ASO. * Fast switching


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    o-2202sb9032sd12122sb1467+72sd22182sb14682sd22192sb12682sd1904t0-220mf2sa128 PDF

    2SB1205

    Abstract: 2S81119 2Sk222 2sa128
    Contextual Info: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf


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    tq220mlt0220mlt03pb2sb1205+32s811192sk2222sa128 PDF

    2SD1206

    Abstract: 2SD1214 2SD1206 R 2SB889 2sn121 2SD1198 2SD1198A 2SD1199 2SD1200 2SD1205A
    Contextual Info: - 2 38 - Ta=25'C. *EP(áTc=25‘ C M 03 tr -/N u •CEO (V) 2SD1198 (V) (A) [*EPfátyp{¡f] VcB (V) (min) (max) Ic/ I Vc e (V) (max) (V) e (A) (V) 4000 40000 10 1 1.8 2.2 1 i 0. 1 45 4000 40000 10 1 1.8 2.2 1 0. 001 0.1 20 400 2000 10 0. 002 0.2 0.01 0. 001


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    2sd11982sd1198a2sd11992sd1200+102sd120s2sd1205a2sd1206sc-642sd12222sb9082sd12142sd1206 r2sb8892sn121 PDF

    2SB927

    Abstract: 2SB930 2SB813 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M
    Contextual Info: - 66 - T a = 2 5 cC , *EÎ]ÎÏTc=25<C m z 2SB903 2SB904 tt £ m m 2SB905 2SB906 m m. VcBO VcEO (V) (V) Ic(DC) (A) Pc Pc* w (W) M ICBO (max) Ä) (u Vro (V) M (min) ft W (max) te Vcp (VÍ (Ta=25T;) Ic /1 e (A) [tEPIitypffi] (max) (V) le (A) (V) ÏB Ó O


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    2sb9032sb9042sb9052sb906+82sb9072sb9082sb909m2sb9302sd1253a2sd12542sb9272sb813 PDF

    2SDI80

    Abstract: 2sc2238 2SD1431 2SC3303 2SC212Q 2sd1855 2SD1877 2SC3257 2SD1212 2SD1409
    Contextual Info: - m £ Type No. 2SD 1442 / fé T 2SÖ 1442A fé T 2SD fé T fé T tt 1443 2SD 1443A 2SD 1444 € M anuf. ✓ m h SANYO 2SD1235 2SD1409 2SC27Q3 2SC3303 2SD471 2SD 1446 ^ fé T 2SD 1447 ~ h m 2SD400 2SD B Ü n 2SDÎ802 2SD1802 a 2SD 1450 ^ 2SD 1451 a 2SD 1452


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    2sd14422sd12352sd12122sd400+132sd5532sd14442sd14452sd1445a2sdi802sc22382sd14312sc33032sc212q2sd18552sd18772sc32572sd1409 PDF

    THINKI transistor catalog

    Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
    Contextual Info: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003


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    2sa914o-1262sa9002sc2556+112sc2556alm317ko-220lm317tthinki transistor catalogaudio amplifier icbd249c catalogaudio high power amplifier3dd3012sc32292sa747 PDF

    STRS6307

    Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
    Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173


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    2n30542n327412n42402n4908+162n3054a2n37662n42732n49092n30552n3767strs6307str54122n3055 to-220s2000a3strs6309s2000a2bdw362sc3883strs6308str6020 PDF