2SC421 Search Results

1SV211

Abstract: 2SC2348 2SC2347 3SK240 1SV259 2SC382 3SK146 3SK275
Contextual Info: Transistors & Diodes for TV Receiver Tuner F5 ~ ~ '^ Ç » ck a g e A p p lic a tio n -^ TO-92 Super Mini SC-59 USM (SC-70) SMQ (SC-61) SSM RF 3SK146 3SK207 3SK153 3SK232 #3SK240 3SK249 2SC3828 #3SK250 3SK259 2SC4214 MIX 2SC3121 2 SC4246 2SC3120 2SC4245

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC4210 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • High hFE: + 0.5 25 -0.0 3 + 0.25 1.5 - 0.15 h FE=100~320 -1 • 1 Watts Amplifier Applications. • Complementary to 2SA1621 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL

2SA1621

Abstract: 2SC4210
Contextual Info: 2SC4210 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4210 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 2SA1621 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)

2SC4212

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4212 Silicon NPN triple diffusion planar type For color TV horizontal deflection driver Unit: mm 8.0+0.5 –0.1 3.2±0.2 M Di ain sc te on na tin nc ue e/ d • Features ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: 2SC4215 NPN Silicon Transistor P b Lead Pb -Free 3 1 1. BASE 2. EMITTER 3. COLLECTOR FEATURES: 2 SOT-323(SC-70) * Power dissipation SOT-323 Outline Demensions Unit:mm A SOT-323 B TOP VIEW C D E G H K J WEITRON http://www.weitron.com.tw L M 1/4 Dim A B C D

Contextual Info: TO SHIBA 2SA1621 2 S A 1 621 TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO POWER AMPLIFIER APPLICATIONS + 0.5 2 .5 - 0 . 3 • • High hpE : hpE = 100~320 Complementary to 2SC4210 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: Reliability Tests Report Product Name: 2SC4213 Package Name: USM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s

2SC3258

Abstract: 2SC3950 2SC3209 3918 2SC4116 2sc2562 2SC3958 2SC3874 2SC4211 2SD667
Contextual Info: - £ Type No. 2SC 3927 £ Manuf. ^ H B ft SANYO TOSHIBA -yy'ry 2SC3Q90 2SC4157 2SC 3928 = Ü 2SC2812 2SC2712 2SC 3929 / 2SC4211 2SC4116 2SC4211 2SC4211 2SC 3931 fé T fé T fé T fé T 2SC 3932 fé 2SC 3933 2SC4853 2SC 3935 fé T fé T fé T 2SC 3936 fé T

2SC1681

Abstract: 2sc1971 2SC2990 2SC1165 2SC1843 2SC1763 2SC1764 2SC2363 2SD1486 2SC1740LN
Contextual Info: - 118m % T y p e No. * 2SC 1571 * 2SC 1571L tt « Manuf. = ì¥ SANYO 2SC1570 = n 2SC1570 2SC 1573 & T 2SC4218 2SC 1573A & T 2SC4218 * 2SC 1572 * 2SC 15 74 * 2SC 1577 * 2SC 1578 M 2 TOSHIBA 2SC 1681 m b NEC 2SC 1843 B 3L HITACHI 2SC 1775 m ± ii FUJITSU □

4946

Abstract: me 4946 4947 2SC5020 an 4953 4953 2SC3124 2SC3310 2SC4639 4336
Contextual Info: - m % a « T y p e No. Manuf. = æ SANYO 2SC 4930 2SC 4931 z 2SC 4932 S 2SC 4933 2SC 4934 ^ 2SC 4935 3L 23C 4336 — 2SC 4940 — f 2 :v- NEC ÏZ. HITACHI s ± il FUJITSU ta t M ATSUS H I T A 2SC4838 ZdLOUUO 2SC4808 2SC4805 2SD2228 2SD1820 2SC3440 2SC4211

Contextual Info: Power T ransistors 2SC4212 2SC4212 Silicon NPN Triple-Diffused Planar Type Horizontal Deflection Driver for Color TV set • Features • H igh c o lle c to r-e m itte r v o ltag e V Package Dimensions Unit.I mm 3 . 2 ± 0.2 ceo • T O -1 2 6 p ack ag e , no in su latio n n e e d e d w h en fixing to a h e a t sink

2SC4214

Contextual Info: 2SC4214 TO SHIBA 2SC4214 TOSHIBA TRANSISTOR SILICON NPN PLANAR TYPE Unit in mm UHF TV TUNER RF AM PLIFIER APPLICATIONS + 0.2 I 0.55 Marking 2 _EL HN UNIT V V V mA mA mW °C °C f U1 1. 2. 3. 4. 0.85 80 Tstg RATING 25 20 2 4 20 150 125 -5 5 -1 2 5 3 jJ SYMBOL

10S6

Abstract: 2SC4219
Contextual Info: Ordering number:EN 2709 2SC4219 No.2709 ÑPN Triple Diffused P lanar Silicon Transistor Switching Regulator Applications Features . High breakdown voltage, high reliability Vq e q j ^OOV . Fast switching speed (tf: 0.1us typ). . Wide ASO . Adoption of MBIT process

Contextual Info: 2SC4217 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)300 I(C) Max. (A)200m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2042A

Abstract: k 2968 2SC4217
Contextual Info: Ordering number: EN 2968 SAÊÊYO 2SC4217 No.2968 NPN Triple Diffused Planar Silicon Transistor Color TV Chroma Output and Audio Output Applications F eatures - High breakdown voltage Vceo —300V • Micaless package facilitating easy mounting A bsolute Maximum R atings at Ta = 25°C

2SC4214

Contextual Info: 2SC4214 TO SH IBA 2SC4214 TOSHIBA TRANSISTOR SILICON NPN PLANAR TYPE Unit in mm UHF TV TUNER RF AMPLIFIER APPLICATIONS + 0.2 Low Noise Figure : NF = 2.8dB Typ. High Power Gain V(x; = 4.5V : Gpb = 15dB (Typ.) Excellent Forward AGC Characteristics —EE 1.90

transistor 4213

Abstract: 2SC4213 SC4213
Contextual Info: 2SC4213 TO SH IBA 2SC4213 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR MUTING AND SWITCHING APPLICATIONS • • High Emitter-Base Voltage High Reverse hjrg • • • Low On Resistance High DC Current Gain Small Package Ve BO = 25V (Min.)

2SC4219

Contextual Info: Ordering number:EN2709 NPN Triple Diffused Planar Silicon Transistor 2SC4219 400V/4A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability VCEO≥400V . · Fast switching speed (tf=0.1µs typ). · Wide ASO.

Contextual Info: 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1621 Audio Power Amplifier Applications Unit: mm High hFE: hFE = 100~320 • Complementary to 2SC4210 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

Contextual Info: 2SC4210 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4210 Audio Power Amplifier Applications • High DC current gain: hFE = 100~320 • Complementary to 2SA1621 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

2SC4213

Contextual Info: 2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4213 For Muting and Switching Applications Unit: mm • High emitter-base voltage: VEBO = 25 V (min) • High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) • Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)

2SC4219

Abstract: ITR06499 ITR06500 ITR06501 ITR06502
Contextual Info: Ordering number:ENN2709 NPN Triple Diffused Planar Silicon Transistor 2SC4219 400V/4A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability VCEO≥400V . · High-speed switching (tf=0.1µs typ). · Wide ASO.

Contextual Info: 2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4213 For Muting and Switching Applications Unit: mm • High emitter-base voltage: VEBO = 25 V (min) • High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) • Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)

2SC4215

Contextual Info: 2SC4215 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC4215 ○ 高周波増幅用 ○ FM, RF, MIX, IF 増幅用 単位: mm • 帰還容量が小さい。 : Cre = 0.55 pF 標準 • 低雑音指数です。 : NF = 2dB (標準)