2SD121 Search Results

2SB904

Contextual Info: Ordering number:1022A PNP/NPN Epitaxial Planar Silicon Transistors 2SB904/2SD1213 30V/12A High-Speed Switching Applications Applications Package Dimensions • Large current switching of relay drivers, high-speed inverters, converters. unit:mm 2022A [2SB904/2SD1213]

2SD1212

Abstract: 2SB903
Contextual Info: SavantIC Semiconductor Product Specification 2SD1212 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage ·Large current capacity. ·Complement to type 2SB903 APPLICATIONS ·Suitable for relay drivers, high-speed

2SB897

Abstract: 2SD1210 darlington power transistor 10a power darlington transistor 10A TRANSISTOR 2SB897
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -10A ·Low Collector Saturation Voltage: VCE(sat) = -1.5V(Max.) @IC= 10A ·Complement to Type 2SD1210 APPLICATIONS

Contextual Info: Ordering num ber: EN990C I 2SB903/2SD1212 N 0.99OC I PNP/NPN Epitaxial Planar Silicon Transistors SAiWO 30V/12A High-Speed Switching Applications I APPLIC ATIO N S • Suitable fo r relay drivers, high-speed inverters, converters, and other general large-current switching applications

2SB904

Abstract: 2SD1213
Contextual Info: Product Specification www.jmnic.com 2SD1213 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Low collector-to-emitter saturation voltage : VCE sat = 0.4V(max.) ・Large current capacity. ・Complement to type 2SB904 APPLICATIONS ・Large current switching of relay drivers,

2SB903

Abstract: 2SD1212 6 pin power switching ic to220
Contextual Info: JMnic Product Specification 2SB903 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Large current capacity. ・Complement to type 2SD1212 APPLICATIONS ・Suitable for relay drivers, high-speed inverters,converters, and other genral

2sdi2

Abstract: d1212 2SB903 2SD1212
Contextual Info: Ordering number: EN990C I SA\YO i _PNP/NPN Epitaxial 2SB903/2SD1212 Planar Silicon Transistors NO.990C 30V/12A High-Speed Switching Applications A P P L IC A T IO N S • Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching applications

2SB903

Abstract: 2SD1212 6 pin power switching ic to220
Contextual Info: SavantIC Semiconductor Product Specification 2SB903 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage ·Large current capacity. ·Complement to type 2SD1212 APPLICATIONS ·Suitable for relay drivers, high-speed

2SD1213

Abstract: 2SB904
Contextual Info: SavantIC Semiconductor Product Specification 2SD1213 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Low collector saturation voltage ·Large current capacity. ·Complement to type 2SB904 APPLICATIONS ·Large current switching of relay drivers,

2SB904

Abstract: 2SD1213
Contextual Info: SavantIC Semiconductor Product Specification 2SB904 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SD1213 ·Low collector saturation voltage ·Large current capacity APPLICATIONS ·Large current switching of relay drivers,

2SB903

Abstract: 2SD1212
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB903 DESCRIPTION •High Collector Current: IC= -12A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -5A ·Complement to Type 2SD1212 APPLICATIONS ·Designed for relay drivers, high-speed inverters, converters,

2SB987

Abstract: 2SD1211
Contextual Info: Transistor 2SD1211 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB987 Unit: mm 5.9±0.2 4.9±0.2 ● High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier.

2SD1213

Abstract: 2SB904 ITR08684
Contextual Info: Ordering number:ENN1022A PNP/NPN Epitaxial Planar Silicon Transistors 2SB904/2SD1213 30V/12A High-Speed Switching Applications Applications Package Dimensions • Large current switching of relay drivers, high-speed inverters, converters. unit:mm 2022A [2SB904/2SD1213]

2SB0987

Abstract: 2SB987 2SD1211
Contextual Info: Transistor 2SD1211 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB0987 2SB987 Unit: mm 5.9±0.2 4.9±0.2 ● High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier.

2SB904

Abstract: 2SD1213
Contextual Info: Inchange Semiconductor Product Specification 2SB904 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SD1213 ·Low collector saturation voltage ·Large current capacity APPLICATIONS ·Large current switching of relay drivers,

2SD1218

Contextual Info: 2SD1218 2SD1218 NPN z f l s — i ~ M & — ' > Y > / S i NPN Planar Darlington " jJ - ' s t f f f t ¥f ^ /F ea tu res • • • /M ed iu m Speed Power Switching av 7 9 • 60 V <r>"/j.-f— r 4 t — Built-in 60 V zener diode between ¿ ’and B Unit I mm

2SD1210

Contextual Info: 2SD1210 2SD1210 NPNX fc°9 + i s T ' J l ' j f e '> lJ □ > ' y ~ NPN Silicon Epitaxial Darlington Transistor l > b >& % H ) Audio Frecluency Power Amplifier Low Speed High Current Switching Industrial Use x*ffl KWM/ P A C K A G E D IM E N S IO N S ¡» « / F E A T U R E S

2SD1211

Abstract: 2SD121
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1211 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 4.9±0.2 M Di ain sc te on na tin nc ue e/ d 5.9±0.2 ue pl d in an c se ed lud pl vi an m m es si

2SD1212

Abstract: 2SB903
Contextual Info: Ordering number:ENN990C PNP/NPN Epitaxial Planar Silicon Transistors 2SB903/2SD1212 30V/12A High-Speed Switching Applications Applications Package Dimensions • Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching

Contextual Info: Transistor 2SB987 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1211 Unit: mm 5.9±0.2 4.9±0.2 0.7±0.1 2.54±0.15 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te

2SD1217

Contextual Info: 2SD 1217 2SD1217 y 'J 3 > N P N ~ ? l' — M h > V ' / S i N P N P l a n a r D a r li n g to n /M ed iu m Speed Power Switching U nit ! mm 1 0 . 5 ± 0 .5 • 4# ^ /F e a tu r e s 3 1 /^ - 4.8max. 9 .8m ax. xRS]lc 60 V <r>"/ J . + — 9~4 t — 1.5max. 7.6min.

common emitter amplifier

Abstract: 2SD1211
Contextual Info: Transistors 2SD1211 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 5.9±0.2 4.9±0.2 M Di ain sc te on na tin nc ue e/ d • High collector-emitter voltage Base open VCEO • Optimum for the driver-stage of a low-frequency and 40 W to 60

sc 4145

Abstract: NEC 4164 2SC4116 2SC4667 2SC4145 2SC4211 c3503 2sc4153 2SC3170 rohm 4157
Contextual Info: - m « M an u f. u— A m ED 2SC 4148 / 2SC 4149 2SC 4150 S 2SC345Ö n— A 2SC35Ö3 ifim T C 2SC3254 2SC3255 2SD1212 S t^ t c 2SC 4 1 5 1 X 2SC 4 1 5 3 / 2SC 4154 v-y'ry h m z m 4155 2SC 4157 —' 2SC 4 1 5 9 J M S = 2SC 4160 2SC 4 1 6 1 2SC 4162 = Z ft ft

2SB903

Abstract: 2SD121
Contextual Info: Ordering number:990C PNP/NPN Epitaxial Planar Silicon Transistors 2SB903/2SD1212 30V/12A High-Speed Switching Applications Applications Package Dimensions • Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching