2SDI2 Search Results

2SB1267

Contextual Info: Continued from previous page Absolute maximum ratings Type No. Package type Electrical characteristics Ta = 25 "C VCB(sat) max @ 1C •IB Applications VCBO (V) VCEO to (V) (A) PC (W ) (2 ) VCE(sat) fr @ Vce hre @ V C E lC max (mV) 1C (A) (mA) te hFE XSF

Contextual Info: HITACHI 2SD1248 K SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER ! lluc 2 ati ítyfri .V Ü H U ltC t li uin:riSH,ii>m¡mo) -io« I Wl*J¿ 1 JE D E C TO-220AB) • A B SO LU T E MAXIMUM RATINGS (Ta*25°C) Symbol Item MAXIMUM CO LLECTO R DISSIPATION

2SB919

Abstract: jo16 2SD123
Contextual Info: Ordering number: EN1046B 2S B 919/2S D 1235 PNP/NPN Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications Use Large current switching o f relay drivers, high-speed inverters, converters Features • • Low collector-to-em itter saturation voltage: V cE sa t = _ '0 .5V(PNP), 0.4(NPN) max.

piezoelectric actuator plate vibration machining

Abstract: PT100 temperature sensor ABB motor
Contextual Info: Signal Isolating Converters, Trip Amplifiers and Displays Catalogue 2012/2013 Analogue Signal Conditioning The World of Industrial Connectivity As experienced experts we support our customers and partners around the world with products, solutions and services in the industrial environment of power, signal

2SB926

Abstract: 2SD1246
Contextual Info: Ordering number: EN 1030E i SANYO 2SB926/2SD1246 NO.1030E PNP/ NPN Epitaxial Planar Silicon Transistors • Large-Current Driving Applications Applications • Power supplies, relay drivers, lam p drivers, electrical equipm ent Features • Adoption o f FBET, MBIT processes

Contextual Info: Power J ransistors 2SD1270 2SD1270 Silicon NPN Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SB945 • Features • L ow c o lle c to r-e m itte r s a tu ra tio n v o lta g e • G ood lin e a rity of DC c u r r e n t gain

2SD1206

Abstract: 2SD1214 2SD1206 R 2SB889 2sn121 2SD1198 2SD1198A 2SD1199 2SD1200 2SD1205A
Contextual Info: - 2 38 - Ta=25'C. *EP(áTc=25‘ C M 03 tr -/N u •CEO (V) 2SD1198 (V) (A) [*EPfátyp{¡f] VcB (V) (min) (max) Ic/ I Vc e (V) (max) (V) e (A) (V) 4000 40000 10 1 1.8 2.2 1 i 0. 1 45 4000 40000 10 1 1.8 2.2 1 0. 001 0.1 20 400 2000 10 0. 002 0.2 0.01 0. 001

Contextual Info: SANYO SEMICONDUCTOR CORP 12 E D I 7 cn 7 D 7 b r - 3 00 0 5 0 3 ^ □ | ~ 3 - O ? NPN/ pnp Epitaxial Planar Silicon Transistors 2010A. High Current Switching Applications 1046A Use * Large current switching of relay drivers, high-speed inverters, converters

2SD1028

Abstract: 2SK1597 2SK917 2SC1025 2SK919 2SB823 2SD977 2SC1051P 2SA1019 3SK190
Contextual Info: LIST O F D I S C O N T I N U E D T R A N S I S T O R S The following is an alpha-numerical list of the discontinued products as of October 31,1993. Type Number Replacement Type Number Replacement Type Number 2SA608SPA 2SA608NP 2SA608K-NP 2SA659 2SA930 2SA1017

IN101

Abstract: IN-101 2SB943 2SD12 2SD1268
Contextual Info: P o w er T ra n s is to rs 2SD1268 2S D 1268 Silicon N PN Epitaxial P lanar Type P ackage Dim ensions Pow er Switching C om plem entary Pair with 2 S B 9 4 3 Unit 1 mm 4.4ma x 10.2max. 5.7max. • Features 2.9max, • Low co llecto r-em itter saturation voltage V Ce (sao