2SC4667 Search Results

2SC4667

Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4667 Features High transition frequency: fT = 400 MHz typ. Low saturation voltage: VCE (sat) = 0.3 V (max) High speed switching time: tstg = 15 ns (typ.) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25

2SC4667

Contextual Info: TO SHIBA 2SC4667 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4667 ULTRA HIGH SPEED SWITCHING APPLICATIONS. COMPUTER, COUNTER Unit in mm APPLICATIONS. • High Transition Frequency : Pp = 400MHz (Typ.) • Low Saturation Voltage : V£E (sat) = 0.3V (Max.)

2SC4667

Contextual Info: TO SH IBA 2SC4667 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4667 ULTRA HIGH SPEED SWITCHING APPLICATIONS. COMPUTER, COUNTER APPLICATIONS. • • • Unit in mm High Transition Frequency :Pp = 400MHz (Typ.) Low Saturation Voltage :V c e (sat) —0-3V (Max.)

2SC4667

Contextual Info: 2SC4667 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4667 Ultra High Speed Switching Applications Computer, Counter Applications • High transition frequency: fT = 400 MHz (typ.) • Low saturation voltage: VCE (sat) = 0.3 V (max) • High speed switching time: tstg = 15 ns (typ.)

2SC4667

Contextual Info: TOSHIBA 2SC4667 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4667 ULTRA HIGH SPEED SWITCHING APPLICATIONS. COM PUTER, COUNTER APPLICATIO N S. U n it in mm • H igh Transition Frequency : fx = 400MHz (Typ.) • Low Satu ration Voltage : V ç je (sat) = 0.3 V (M ax.)

2SC4667

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC4667 ULTRA HIGH SPEED SWITCHING APPLICATIONS. COMPUTER, COUNTER U nit in mm APPLICATIONS. • High Transition Frequency : Pp = 400MHz Typ. • Low Saturation Voltage : V q e (sat) =0.3V (Max.) • High Speed Switching Time : tgtg = 15ns (Typ.)

2SC4667

Contextual Info: 2SC4667 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4667 ○ 超高速度スイッチング用 ○ 電子計算機用, カウンタ用 単位: mm • トランジション周波数が高い。 : fT = 400 MHz (標準) •

Contextual Info: T O S H IB A 2SC4667 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4667 ULTRA HIGH SPEED SWITCHING APPLICATIONS. COMPUTER, COUNTER • • • Unit in APPLICATIONS. High Transition Frequency : Pp = 400MHz (Typ.) Low Saturation Voltage : V q e (Sat) =0.3V (Max.)

2SC4667

Contextual Info: 2SC4667 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4667 Ultra High Speed Switching Applications Computer, Counter Applications • High transition frequency: fT = 400 MHz (typ.) • Low saturation voltage: VCE (sat) = 0.3 V (max) • High speed switching time: tstg = 15 ns (typ.)

2SC4667

Abstract: TOSHIBA ULTRA HIGH SPEED SWITCHING APPLICATIONS
Contextual Info: 2SC4667 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4667 Ultra High Speed Switching Applications Computer, Counter Applications • High transition frequency: fT = 400 MHz (typ.) · Low saturation voltage: VCE (sat) = 0.3 V (max) · High speed switching time: tstg = 15 ns (typ.)

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

2SC1815 2SA1015

Abstract: 2SK117 2sk389 2sj74 2SC2240 2SC4667 2sc2458 2sk246 2SC1923 2SC1815
Contextual Info: Transistors T ransistors & D iodes fo r A udio Application A M /FM Tuner Frequency Package . Super Mini SC-59 TO-92 (SC-43) Mini 2SC1923 2SC2668 2SC2714 USM (SC-70) SSM SMQ (SC-61) 2SC4215 2SC4915 3SK126 USQ SMV FM8 SMS TA4007F 3SK160 RF FM 2SK161

2SC4751

Abstract: on 4772 2SC4767 2SC4667 2SC3892A 2SC4749 2SC3124 2SC4589 2sd1850 2SD2336
Contextual Info: 198 - £ S « Type No. Manuf. 2SC 4740 H m SANYO 3C 2Ë TOSHIBA NEC S ÍL HITACHI * ± a FUJITSU T MATSUSHITA Ÿà 2SC 4745 a B 4 4 4 4 2SC3894 2SD1432 2SD2372 2SC 4748 J B IL 2SC383G 2SC3889A 2SD2373 2SC 4747 > 0 4 2SC3897 2SC4560 2SC 4748 2SC3277 2SC3306

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor SMD s72

Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Contextual Info: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243