2SC4215 Search Results

Contextual Info: 2SC4215 NPN Silicon Transistor P b Lead Pb -Free 3 1 1. BASE 2. EMITTER 3. COLLECTOR FEATURES: 2 SOT-323(SC-70) * Power dissipation SOT-323 Outline Demensions Unit:mm A SOT-323 B TOP VIEW C D E G H K J WEITRON http://www.weitron.com.tw L M 1/4 Dim A B C D

2SC1815 2SA1015

Abstract: 2SK117 2sk389 2sj74 2SC2240 2SC4667 2sc2458 2sk246 2SC1923 2SC1815
Contextual Info: Transistors T ransistors & D iodes fo r A udio Application A M /FM Tuner Frequency Package . Super Mini SC-59 TO-92 (SC-43) Mini 2SC1923 2SC2668 2SC2714 USM (SC-70) SSM SMQ (SC-61) 2SC4215 2SC4915 3SK126 USQ SMV FM8 SMS TA4007F 3SK160 RF FM 2SK161

smd marking QY

Abstract: 2SC4215
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4215 Features Small reverse transfer capacitance: Cre = 0.55 pF typ. Low noise figure: NF = 2dB (typ.) (f = 100 MHz) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

2sc4215-o

Contextual Info: MCC TM Micro Commercial Components 2SC4215-R 2SC4215-O 2SC4215-Y
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Small reverse transfer capacitance: Cre= 0.55pF typ.

Contextual Info: MCC TM Micro Commercial Components Features • • • • • • 2SC4215-R 2SC4215-O 2SC4215-Y
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Halogen free available upon request by adding suffix "-HF"

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 2SC4215 Plastic-Encapsulate Transistors SOT-323 TRANSISTOR NPN FEATURES z Small reverse transfer capacitance: Cre= 0.55pF(typ.) z Low noise figure: NF=2dB (typ.) (f=100 MHz) 1. BASE 2. EMITTER 3. COLLECTOR

Contextual Info: MCC TM Micro Commercial Components 2SC4215-R 2SC4215-O 2SC4215-Y
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Halogen free available upon request by adding suffix "-HF"

Contextual Info: Reliability Tests Report Product Name: 2SC4215 Package Name: USM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s

2SC4215

Contextual Info: 2SC4215 TO SH IBA 2SC4215 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, MIX, IF AMPLIFIER APPLICATIONS • • Small Reverse Transfer Capacitance : Cre = 0.55 pF Typ. Low Noise Figure : NF = 2 dB (Typ.) (f = 100 MHz)

100MHZ

Abstract: 2SC4215 30MHZ
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 2SC4215 Plastic-Encapsulate Transistors SOT-323 TRANSISTOR NPN FEATURES z Small reverse transfer capacitance: Cre= 0.55pF(typ.) z Low noise figure: NF=2dB (typ.) (f=100 MHz) 1. BASE 2. EMITTER 3. COLLECTOR

Contextual Info: 2SC4215 NPN Silicon Transistor P b Lead Pb -Free 3 1 1. BASE 2. EMITTER 3. COLLECTOR FEATURES: 2 SOT-323(SC-70) * Power dissipation SOT-323 Outline Demensions Unit:mm A SOT-323 B TOP VIEW C D E G H K J WEITRON http://www.weitron.com.tw L M 1/4 Dim A B C D

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR 2SC4215 U n it in m m H IG H FR E Q U E N C Y A M P L IF IE R A P P L IC A T IO N S . F M , RF, M I X , IF A M P L I F I E R A P P L I C A T I O N S . • • Sm all Reverse T ran sfer C apacitance : Cre = 0.55pF Typ.

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC4215 HIGH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, M I X, U n it in mm IF A M P L I F I E R A P P L I C A T I O N S . 2.1 ± 0 1 . Small Reverse T r a nsfer C a p a c itance . Low Noise Figure I.2 5 ± 0 .1 : C re=0.55pF Typ.

Contextual Info: 2SC4215 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4215 High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications Unit: mm • Small reverse transfer capacitance: Cre = 0.55 pF typ. • Low noise figure: NF = 2dB (typ.) (f = 100 MHz)

2SC4215

Contextual Info: 2SC4215 TOSHIBA 2SC4215 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS. FM, RF, MIX, IF AM PLIFIER APPLICATIONS. 2.1 ±0.1 • Small Reverse Transfer Capacitance : Cre = 0.55pF Typ. Low Noise Figure

Contextual Info: TO SH IB A 2SC4215 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4215 HIGH FREQUENCY AM PLIFIER APPLICATIO NS Unit in mm FM, RF, MIX, IF AM PLIFIER APPLICATIO NS 2.1 ± 0.1 1 .2 5 t 0.1 • Sm all Reverse Transfer Capacitance : Cre = 0.55pF Typ.

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

MMS8050-L

Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
Contextual Info: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.

2SC1571

Abstract: 2sc3828 4088B 2SC3904 4082 mitsubishi 2SC3609 2SC4082 2SC4161 K 4087 2SC4246
Contextual Info: tt SS! £ T y p e No. € Manuf. ft H SANYO 3R *£ TOSHIBA m b NEC Ä ± àfi FUJITSU fâ T M ATSUS H I T A Z £ MITSUBISHI □ — A ROHM 2SC4082 2SC4259 2SC 4068 tö 2SC 4069 h UN2217 DTCÎ 2 4 G K h UN4217 DTC124GS 2SC 4070 2SC 4071 2SC 4073 n ft =- ft

2SC3532

Abstract: 2SC3533 2SC3082K 2SC3170 2SC4242 2SC4212 25C2335 2SC3077 2SC3531 2SC3535
Contextual Info: - M % it T y p e No. 2 SC 4 2 1 0 2SC £ Manuf. H b £ SANYO TOSHIBA = n 2SC 4212 ^ te T 2SC 4213 / M £ 2SC 4215 > 2SC 4216 ^ 2SC 4217 J = n 2SC 4218 y H & ÌH 2SC 4219 2SC2621 2SC4181 J 2SC 4221 J 2SC3425 2SC2688 ± FUJITSU ÒS te IE 2SC4400 2SC4415 2SC4178

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

RFM70U12D

Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック

JDV2S31CT

Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。