2SD1235 Search Results

2SB919

Abstract: 2SD123
Contextual Info: Ordering number:1046B PNP/NPN Epitaxial Planar Silicon Transistors 2SB919/2SD1235 30V/8A High-Speed Switching Applications Applications Package Dimensions • Large current switching of relay drivers, high-speed inverters, converters. unit:mm 2010C [2SB919/2SD1235]

2SB919

Abstract: 2SD1235 2SD123
Contextual Info: Ordering number:ENN1046B PNP/NPN Epitaxial Planar Silicon Transistors 2SB919/2SD1235 30V/8A High-Speed Switching Applications Applications Package Dimensions • Large current switching of relay drivers, high-speed inverters, converters. unit:mm 2010C [2SB919/2SD1235]

2SB919

Abstract: 2SD1235
Contextual Info: JMnic Product Specification 2SB919 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD1235 ・Low collector saturation voltage ・Large current capacity APPLICATIONS ・Large current switching of relay drivers, high-speed inverters,converters

2SB919

Abstract: 2SD1235
Contextual Info: Inchange Semiconductor Product Specification 2SB919 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD1235 ・Low collector saturation voltage ・Large current capacity APPLICATIONS ・Large current switching of relay drivers,

2SD1235

Abstract: 2SB919
Contextual Info: SavantIC Semiconductor Product Specification 2SD1235 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB919 ·Low collector saturation voltage ·Large current capacity. APPLICATIONS ·Large current switching of relay drivers,

2SB919

Abstract: 2SD1235
Contextual Info: SavantIC Semiconductor Product Specification 2SB919 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD1235 ·Low collector saturation voltage ·Large current capacity APPLICATIONS ·Large current switching of relay drivers,

2SB919

Abstract: 2SD1235 2SD123
Contextual Info: Inchange Semiconductor Product Specification 2SD1235 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Complement to type 2SB919 ·Low collector saturation voltage ·Large current capacity. APPLICATIONS ·Large current switching of relay drivers,

Contextual Info: Ordering num ber: EN1046B 2SB919/2SD1235 PNP/NPN Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications Use • Large current switching of relay drivers, high-speed inverters, converters Features • Low collector-to-emltter saturation voltage: VcE sat =—'0.5V(PNP), 0.4(NPN) max.

2SDI80

Abstract: 2sc2238 2SD1431 2SC3303 2SC212Q 2sd1855 2SD1877 2SC3257 2SD1212 2SD1409
Contextual Info: - m £ Type No. 2SD 1442 / fé T 2SÖ 1442A fé T 2SD fé T fé T tt 1443 2SD 1443A 2SD 1444 € M anuf. ✓ m h SANYO 2SD1235 2SD1409 2SC27Q3 2SC3303 2SD471 2SD 1446 ^ fé T 2SD 1447 ~ h m 2SD400 2SD B Ü n 2SDÎ802 2SD1802 a 2SD 1450 ^ 2SD 1451 a 2SD 1452

2SB919

Abstract: 2SD1235 2SD123
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB919 DESCRIPTION •High Collector Current: IC= -8A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -3A ·Complement to Type 2SD1235 APPLICATIONS ·Designed for large current switching of relay drivers, highspeed inverters, converters applications.

Contextual Info: 2SD1235S Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.140 h(FE) Max. Current gain.280

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SD2334

Abstract: 2sc4814 2SD2076 2216y 2SD1546 2sd2190 2SD1930 2SD1755 2sc2562 2SC4062
Contextual Info: - m. £ € Manuf. T y p e No. 2 SD 2174 fâ 2SD 2175 □— A 2SD 2176 - # h SANYO T 2SC4488 M 3E TO S H I B A m B NEC 2SC3677 2SD1593 2SC3665 2SD1312 B HITACHI ÎL * ± a FU JITSU tö T MATSUS H I T A z m MITSUBISHI T 2SD 2185 fe' T 2S0 2186 □— A 2SD 2187

2SB1267

Contextual Info: Continued from previous page Absolute maximum ratings Type No. Package type Electrical characteristics Ta = 25 "C VCB(sat) max @ 1C •IB Applications VCBO (V) VCEO to (V) (A) PC (W ) (2 ) VCE(sat) fr @ Vce hre @ V C E lC max (mV) 1C (A) (mA) te hFE XSF

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SD313

Abstract: transistor 2sC3781 2SD1159 2sa128
Contextual Info: SAUYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s * Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device *More collector dissipation available when a device alone is used

SB145

Abstract: 2sd1159 hc/2SB824 transistor 2sb507 sanyo 2Sd1666 2sa128 2SB824 transistor 2sd313
Contextual Info: SAfíYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s ♦ Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device ♦ More collector dissipation available when a device alone is used

2SB919

Abstract: jo16 2SD123
Contextual Info: Ordering number: EN1046B 2S B 919/2S D 1235 PNP/NPN Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications Use Large current switching o f relay drivers, high-speed inverters, converters Features • • Low collector-to-em itter saturation voltage: V cE sa t = _ '0 .5V(PNP), 0.4(NPN) max.

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2sa128

Contextual Info: í?/píVO Low-Saturat ion Vol tage Seri es T0“220, MF, ML Pack g > A p p l i c a t i o n s ♦ Relay drivers. * High-speed inverters. * Conve r te r s . * H igh-cu r ren t switchinf! F e a t u r e s * Low VCE(sat). * Highly resistant to breakdown because of wide ASO. * Fast switching

2SB1205

Abstract: 2S81119 2Sk222 2sa128
Contextual Info: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf

2SD1206

Abstract: 2SD1214 2SD1206 R 2SB889 2sn121 2SD1198 2SD1198A 2SD1199 2SD1200 2SD1205A
Contextual Info: - 2 38 - Ta=25'C. *EP(áTc=25‘ C M 03 tr -/N u •CEO (V) 2SD1198 (V) (A) [*EPfátyp{¡f] VcB (V) (min) (max) Ic/ I Vc e (V) (max) (V) e (A) (V) 4000 40000 10 1 1.8 2.2 1 i 0. 1 45 4000 40000 10 1 1.8 2.2 1 0. 001 0.1 20 400 2000 10 0. 002 0.2 0.01 0. 001

2SC3253

Abstract: 2SB1267 2SB1467 2SB903 2SB919 2SD1212 2SD1235 2SD1903 2SD2218 SC74
Contextual Info: Low-Saturation Voltage Series T0~220, M F ,ML Package A p p ] i c a t i o n s * Relay d r i v e r s . * High-speed in v e rte rs . * C onverters. * H igh-current F e a t u r e s * Low V C E ( s a t ) . * H i g h l y r e s i s t a n t t o b r e a k d o w n b e c a u s e o f w i d e ASO. * F a s t

sc 3228

Abstract: C3468 2SD2159 2SC 3205 2SD880 2SC3296 2sc3192 2SC2320 c2981 2SD1812
Contextual Info: - 15 6 - §ä « T y p e No. a « Manuf. 2SC 3186 •tf-VÍTV 2SC 3187 ✓ tö T 2SC 3189 = 2SC 3190 *' »H m ? nam ? »am ? ita -?«a«? »a«? ttS « T 2SC 3191 2SC 3192 * ' 2SC 3193 / 2SC 3194 2SC 3195 ¿ 2 SC 3196 h n T O S HIBA «am i »am ? 2SC 3199 X