2SC3257 Search Results

2SC3257

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE SW ITCH IN G REGULATOR A N D HIGH VOLTAG E SW ITCHIN G APPLICATIONS. 2SC3257 INDUSTRIAL APPLICATIONS Unit in mm 1 0 .3 M A X . HIGH SPEED D C-DC CO NVERTER APPLICATIONS. • • Excellent Switching Times : tr = 1.0/is Max. , tf=1.0/us (Max.) at Iç = 6A

2SC3216

Abstract: 2SC3217-M 2SC3214 2SA1295 2SC3264 2SC3217 2sc3246 2SC3264 2SC3215 2SA1285 2SC3251
Contextual Info: - 150 - Ta=25t , *EPÍÍTc=25t;) m 2SC3214 2SC3215 2SC3216 2SC3217—M 2SC3218-M 2SC3225 2SC3233 2SC3242 2SC3242A 2SC3243 2SC3244 2SC3245 2SC3245A 2SC3246 2SC3247 2SC3249 2SC3250 2SC3251 2SC3253 2SC3254 2SC3255 2SC3256 2SC3257 2SC3258 2SC3263 2SC3264 2SC3265

2SC3257

Contextual Info: SavantIC Semiconductor Product Specification 2SC3257 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications

Contextual Info: TO SH IBA 2SC3257 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC3257 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 53.6 ± 0 . 2 HIGH SPEED DC-DC CONVERTER APPLICATIONS. OTPTTi • • Excellent Switching Times

Contextual Info: TÔSRIBA 5É •CDISCRETL/OHTOJ' 9097250 TOSHIBA DISCRETE/OPTO 5óC 2SC3257 D^I^QTTSSQ 0T6ô3 IN D U ST R IA L A P PL IC A TIO N S U n it HIGH SPEED DC-DC CONVERTER APPLICATION. 10.3M A X . FE ATURES : . MAXIMUM RATINGS ( T a = 2 5 ° C ) E m itter-B a se

q001

Abstract: 2SC3257 AC75
Contextual Info: “5 t TOSHIBA OISCRETE/OPTO} ^ I ^ D T T S S O □□07bb3 3 J 9097250 TOSHIBA 5ó C 0 TG 6 3 <DIS C R E T E /O P T O 2SC3257 '0 SILICO N NPN T R IP LE D IFFU SED TYPE INDUSTRIAL APPLICATIONS Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS.

Contextual Info: 2SC3257 SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATION. 1CL3MAX. FEATURES: . Excellent Switching Times : tr= l .0/is Max. , t f = l .0#s( M a x . ) at I^=6A

Contextual Info: 2SC3257 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)250 I(C) Max. (A)10 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SD636

Abstract: 2SD636 Matsushita RT1N241C DTC124EK 2SC3281 upa74ha 3394 2SC3372 NEC 3377 RT1N441C
Contextual Info: - sa « Type No. tt 2SC 3365 ^'' 2SC 3366 2SC 3367 ISO 3368 2SC 3369 2SC 3370 2S0 337 3375 3376 3377 3378 3379 2SC 2SC 2SC 2SC 3380 338] 3382 3383 m h SANYO S ÎL 2SC3277 B S ÎL 2SD1236 2SD1236 ÍL fâ T T ta 2SC3257 2SC3137 B ÎL 3K S X «£ □— A

2SC2534

Abstract: 2SC3558
Contextual Info: m —3 Application * M AX. Atr O •O IC v CEO Type No. 2SC3558 2SC2562 2SA1012 2SC3258 2SA1293 2SD553 2SB553 2SD843 2SB753 2SC3257 SWITCHING REG. 2SA1328 2SC3346 2SA1329 2SC36Z5 A 0.6 2 0.2 f=1MHz VCB tön tstg tf (MHz) CV) (A) (pF) (V) (ms) (ß s) (ms)

2SC3257

Contextual Info: Inchange Semiconductor Product Specification 2SC3257 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

2SA1012

Abstract: 2SA1293 2SC2562 2SC3258
Contextual Info: TOSHIBA Powered by TO-220-AB 20 20 40 40 75 75 40 40 60 80 80 100 100 20MIN. 10MIN. 10MIN. 10MIN. 8-40 8-40 12MIN. 10MIN. 10MIN 5-30 5-30 6-30 6-30 7 10 2SA1328 2SA1329 12 2 3 4 5 8 8 12 5 5 5 5 5 5 5 5 5 5 5 5 5 0.1 0.5 0.5 0.8 2 2 3 3 4 5 5 8 8 1 1 1 0.6

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —

BD179-10 equivalent

Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.