2SC3190 Search Results

2SC3190

Abstract: low noise amplifier at 30MHz to
Contextual Info: ST 2SC3190 NPN Silicon Epitaxial Planar Transistor High frequency low noise amplifier application HF band amplifier application The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be

Contextual Info: 2SC3190 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)100m# Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)400m @I(C) (A) (Test Condition)10m

2SC3190

Abstract: 2SC3190 transistor 2SC319
Contextual Info: ST 2SC3190 NPN Silicon Epitaxial Planar Transistor High frequency low noise amplifier application HF band amplifier application The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be

2SC3190

Abstract: 2SC3190 transistor
Contextual Info: ST 2SC3190 NPN Silicon Epitaxial Planar Transistor High frequency low noise amplifier application HF band amplifier application The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be

2sc319* transistor

Abstract: 2SC3190
Contextual Info: ST 2SC3190 NPN Silicon Epitaxial Planar Transistor High frequency low noise amplifier application HF band amplifier application The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2sc3205

Abstract: 2SC3207 KTC2075 2SC3228 2SA1273 kta949 2SC3192 C4369 2SC3226 2Ns551
Contextual Info: Maximum Ratings Electrical Characteristics T a - 2 5 0O Type No ^ FE - Applications (T Y P M IN (m W ) Ic Iß (V) (mA) (V) <mA) (mA) 6 1 - - (M H z ) V CT. (V) (550) 6 V CE •e f (mA) (dB) (V) (mA) (M H z ) I 5.0 6 - 1 Ic 20 100 40^200 6 1 - — — (550)

2sc3205

Abstract: 2SC3207 KTC2075 2SC3228 2SA1273 2SC3194 2sc3226 C4369 kta949 2sc3192
Contextual Info: Maximum Ratings Electrical Characteristics T a - 2 5 0O Type No V CEO A M RF 30 20 fT (T Y P M IN MAX NF (m W ) ^CE (V) (mA) (V) Ic <mA) Iß (mA) (M H z ) V CT. (V) 6 1 - - - (550) 6 V CE (V) (dB) I 5.0 6 - 1 100 50 TO-92(M) F5 50 TO-92(C) F3 6 - 1 100

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

Contextual Info: \H > k à î k «5 N PN F M /R F . M IX OSC FM -IF/A F-IF A M RF M u LAMM R ltkg » TftfM TJIH rK i PNP V CEO •c 2S C 3MÖS 25C 3195 2SC J194 — — V> 30 30 30 KTC90IO K T C t t lt — — 30 10 B F<99 b f s 2 — 2SC 3S79S 0»A 20 20 20 rpC (mW )

2SC3207

Abstract: 2sc3205 KTC2075 2SC3228 2SC3226 2SC3229 2SA1273 KTC2230A Y kta949 2SC3194
Contextual Info: Electrical Characteristics T a - 2 5 0O (m W V CEO N PN F M /R F. M IX O SC PN P (T Y P ) M IN (mA) (V) Ic <mA) Iß (mA) (M H z ) V CT. (V) 6 1 - - - (550) 6 MAX NF Ic (mA) V CE •e f (dB) (V) (mA) (M H z ) I 5.0 6 - 1 50 TO-92(M) F5 100 50 TO-92(C) F3