2SC319 Search Results

2SC460B

Abstract: 2SC458C 2SC458D 2sc945q 2SC763 2SC752G-TM 2SC536F 2SC3199Y 2SC3355 2SC458
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) *c (A) @ & (mA) f, c* @ 'c (mA) fes c„ Freq CDIL (MHz) (pF) Case Max Style ^CBO ^CES> V EB0 (V) Min (V) Min (V) Min 2SC3199Y

2SC3195

Abstract: 2sc319* transistor
Contextual Info: ST 2SC3195 NPN Silicon Epitaxial Planar Transistor High frequency low noise amplifier application VHF band amplifier application The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be

2SC3198

Abstract: 2SC3198 equivalent ST-2sc3198 transistor 2SC3198
Contextual Info: ST 2SC3198 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2sc3198

Abstract: 2SC3198 equivalent transistor 2SC3198 KTA1266 GR KTA1266 transistor KTA1266
Contextual Info: 2SC3198 EPITAXIAL PLANAR NPN TRANSISTOR C B A GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION N FEATURES Excellent h FE Linearity :h FE 2 =100(Typ.) at V CE =6V, I C =150mA :h FE (I C =0.1mA)/h FE (I C =2mA)=0.95(Typ.) Low Noise:NF=IdB(Typ.) at f=1kHz

Contextual Info: P « FORWARD INTERNATIONAL ELECTRONICS LTD, 2SC3199L SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE AUDIO FREQUENCY AMPLIFIER FEATURES •High DC Current Gain: Hfe=70-700. •Excellent Hfe Linearity :Hfe 0*1mA /Hfe(2mA)=0.95(TYP.)

2sc3197

Contextual Info: 2SC3197 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V) I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.200

2SC3198

Abstract: 2SC3198 Y transistor 2SC3198 ST-2sc3198
Contextual Info: ST 2SC3198 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2sC3199 transistor

Abstract: 2SC3199 2SC3199 equivalent
Contextual Info: ST 2SC3199 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC3190

Abstract: low noise amplifier at 30MHz to
Contextual Info: ST 2SC3190 NPN Silicon Epitaxial Planar Transistor High frequency low noise amplifier application HF band amplifier application The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be

2SC3198

Abstract: transistor 2SC3198 2SC3198 equivalent ST-2sc3198 2sc319* transistor 2SC3198 transistor
Contextual Info: ST 2SC3198 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC536E

Abstract: 2SC536G 2SC458C 2SC460B 2SC536F 2SC458D 2SC945P 2SC945Q 2SC752G-TM 2SC3355
Contextual Info: TO-92 Plastic Package Transistors NPN Maxi mum F atings Type No. ^CB V CEi ^EBO (V) Min (V) Min Min 2SC3199Y 50 50 5 2SC3355 20 12 2SC383TM 50 2SC388AT Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pp <c (W) (A) @Tc=25°c hFE e *CBO ^CB

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC3199 TRANSISTOR NPN 1. EMITTER FEATURES z High Current Capability z High DC Current Gain z Small Package 2. COLLECTOR 3. BASE APPLICATIONS z Audio Amplifier Applications

2SC3199

Abstract: 2SK596 2SA733S 2SC945S 2SK156 2SC2710 2SC2785 2SC2786 2SC2787 2SC3488
Contextual Info: TO-92S PACKAGE MX MICROELECTRONICS ● Applied for TV,AV and buzzers amplifiers. NPN TYPE ICBO OR Ptot Ic VCBO VCEO * ICEO ▲ ICES 2SC3199 2SC1815S 2SC945S 2SC1959S 2SA1015S 2SA733S 2SC2785 2SC2786 2SC2787 2SC3488 2SC2710 2SC1740S 2SC1741S AD825 VCES VCB

2sa1267

Contextual Info: 2SC3199 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER Package: TO-92S * Complement to 2SA1267 * Collector Current Ic=150 mA ABSOLUTE MAXIMUM RATINGS at Tamb=250C Characteristic

2SC3190

Abstract: 2SC3190 transistor 2SC319
Contextual Info: ST 2SC3190 NPN Silicon Epitaxial Planar Transistor High frequency low noise amplifier application HF band amplifier application The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be

2SC3199

Abstract: 2SC3199 equivalent 2sC3199 transistor
Contextual Info: ST 2SC3199 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC3199

Abstract: 2sC3199 transistor 2SC319 2sc319* transistor 2SC3199 equivalent
Contextual Info: ST 2SC3199 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SA1267

Contextual Info: 2SA1267 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER Package: TO-92S * Complement to 2SC3199 * Collector-Emitter Voltage VCEO=-50V ABSOLUTE MAXIMUM RATINGS at Tamb=250C Characteristic

2SC3199

Abstract: 2sC3199 transistor 2SC3199 equivalent
Contextual Info: ST 2SC3199 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC3195

Contextual Info: ST 2SC3195 NPN Silicon Epitaxial Planar Transistor High frequency low noise amplifier application VHF band amplifier application The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be

2SC3198

Abstract: transistor 2SC3198 2SC3198 equivalent ST-2sc3198 transistor 2SC3198 data sheet free download f-30MHz 2SC3198 transistor
Contextual Info: ST 2SC3198 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC3199GR

Contextual Info: 2SC3199 0.15 A , 50 V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES    TO-92S High Current Capability High DC Current Gain Small Package REF. A B C

2SC3199

Abstract: 2sc319* transistor 2SC3199GR 2sC3199 transistor
Contextual Info: 2SC3199 0.15 A , 50 V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES    TO-92S High Current Capability High DC Current Gain Small Package REF. A B C

2SC3194

Contextual Info: 2SC3194 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)20m Absolute Max. Power Diss. (W)100m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)