2SC3197 Search Results

2sc3197

Contextual Info: 2SC3197 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V) I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.200

2SC3197

Abstract: 2sc245b 2SC3198Y 2SC3198 2SC2309 2SC2458Y 2sc3114 2SC2274D 2SC2274E 2SC2274F
Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Type No. c A) CBO ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 2SC2274D 100 80 5 0.6 .5 1 2SC2274E 100 80 5 0.6 .5 2SC2274F 100 80 5 0.6 2SC2274K 100 80 5 2SC2309

2SC3114A

Abstract: 2SC3197 2SC230 T042-1 OB2300 2SC2274 2SC23 T-042
Contextual Info: TO-92 p Ia st i c Packag e Tran s i st o r s NPN M a x um RaÜiftgs Type ito. CO Ut V Vii * EJtctrtcal Chiractcrisrtcs (Ta=2S*C, U r te » Otben*<» S p tc ìtrt) to A w U*i •le-O S W KUx ¡S & »4»! * vct • IV) *v*) Mki Mil V« M V*T) vw n M

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. 2SC2274D VCBO ^CEO (V) (V) Min Min 100 80 Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) ^EBO (V) Min 5 (W) 'c (A) 0TC=25°C 0.6 0.5 hFE 'cBO 'ces V CE (HA) 9 (V) GiA) 0 (V)

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

FN1016

Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
Contextual Info: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773

2SC3197

Abstract: 2SC3198G 2SC2458BL 2SC2274D 2SC2274E 2SC2274F 2SC2274K 2SC2309 2SC2309D 2SC2309E
Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics i Ta=25”C, Unless Otherai se Spec tied) Maximum Ratings Type No. 2SC2274D ^CBO ^CEO EBO (V) Min (V) Min V) Win 100 80 5 I c Po (W) A) È TC=25"C 0.6 CBO ^CB CES V CE HA) 0 (V ) pA) (V)

2sc245b

Abstract: 2SC3197 2sc3114 2sc3199 2SC3198-BL 2SC3198 2SC2274D 2SC2274E 2SC2274F 2SC2274K
Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Type No. c A) CBO ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 2SC2274D 100 80 5 0.6 .5 1 2SC2274E 100 80 5 0.6 .5 2SC2274F 100 80 5 0.6 2SC2274K 100 80 5 2SC2309

2SC3197

Abstract: 2SC3198Y 2SC2309 2SC2458BL 2SC2274D 2SC2274E 2SC2274F 2SC2274K 2SC2309D 2SC2309E
Contextual Info: Maximum Ratings Type No. 2SC2274D V Cao ^CEO V ffio V Min (V) Min (V) Min 100 80 5 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) PD 'c (W) (A) ÔTc=25°ï 0.6 0.5 IcBO VCB 'c e s ^CE (MA) « (V) (PA) 0 (V ) Max Max 1 40 h FE Min Max 60

2SC3133 cross reference

Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Contextual Info: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905

2SC3199GR

Abstract: 2SC460B 2sc458c 2SC3197
Contextual Info: Maximum Ratings Type No. 2SC2482 ^CBO ^CEO ^EBO V Min (V) Min (V) Min 300 300 7 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd (W) (A) @Tc=25°c 0.9 0.1 k:iir3 ^ CB (MA) Max e (V) 1 240 ' ces ^CE (MA) Max 9 (V) hF Min 'c & (mA) ^ CE