2SC23 Search Results

PO7C

Abstract: 2SC2380 2SC238
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2380 Unit in m m UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0 =12W Min. (f=470MHz, V C C=12.6V, Pi=3W) . 1 0 0 % T e s t e d f o r L o a d M i s m a t c h S t r e s s at A l l P h a s e A n g l e s w i t h 30:1 V S W R

2SC2319

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2319 Unit in mm HIGH POWER AMPLIFIER FOR CATV APPLICATIONS. FEATURES : . Hide Band and High Gain for Class A Amplifier. . Excellent Cross Modulation Characteristics. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING

2SC2379

Contextual Info: 2SC2379 SILICON NPN EPITAXIAL PLANAR TY P E Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0=6W Min. (f=470MHz, VCC=12.6V, Pi=lW) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=12.5V, P0-6.5W, f=470MHz

2sc2371

Abstract: 2SC237
Contextual Info: Inchange Semiconductor Product Specification 2SC2371 Silicon NPN Power Transistors DESCRIPTION ・With TO-126 package ・High Voltage ・High frequency APPLICATIONS ・For TV chroma output and vertical output applications PINNING PIN DESCRIPTION 1 Emitter

2SC2334

Abstract: 2SA1010
Contextual Info: Product Specification www.jmnic.com 2SC2334 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA1010 ・Low collector saturation voltage ・Fast switching speed APPLICATIONS ・Switching regulators ・DC/DC converters

2SC2307

Contextual Info: JMnic Product Specification 2SC2307 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ,high speed APPLICATIONS ・For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter

2SC2336

Abstract: 2SC2336B audio amplifier POWER TRANSISTORS 2SA1006 2SC2336A 2SA1006A 2SA1006B POWER TRANSISTORS Jmnic
Contextual Info: JMnic Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION ・With TO-220 package ・Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS ・Audio frequency power amplifier ・High frequency power amplifier PINNING

2SA1011

Abstract: 2SC2344
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1011 Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SC2344 APPLICATIONS • High voltage switching , • Audio frequency power amplifier; • 100W output predriver applications

2SC3197

Abstract: 2sc245b 2SC3198Y 2SC3198 2SC2309 2SC2458Y 2sc3114 2SC2274D 2SC2274E 2SC2274F
Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Type No. c A) CBO ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 2SC2274D 100 80 5 0.6 .5 1 2SC2274E 100 80 5 0.6 .5 2SC2274F 100 80 5 0.6 2SC2274K 100 80 5 2SC2309

2sc232a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2328A NPN EPITAXIAL SILICON TRANSISTOR AUDIO POWER AMPLIFIER „ FEATURES * Collector Dissipation Pc=1 W * 3 W Output Application * Complement of 2SA928A „ ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free

2sa928a

Abstract: 2SC2328A
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2328A NPN EPITAXIAL SILICON TRANSISTOR AUDIO POWER AMPLIFIER „ FEATURES * Collector Dissipation Pc=1 W * 3 W Output Application * Complement of 2SA928A 1 TO-92NL „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free

2SC2361

Abstract: 2sa1123
Contextual Info: Inchange Semiconductor Product Specification 2SC2361 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Complement to type 2SA1123 ·Low collector saturation voltage APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2328A NPN EPITAXIAL SILICON TRANSISTOR AUDIO POWER AMPLIFIER „ FEATURES * Collector Dissipation Pc=1 W * 3 W Output Application * Complement of 2SA928A „ ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free

2SC2334

Abstract: 2SA1010 MP-25
Contextual Info: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistor 2SC2334 NPN エピタキシアル形シリコン・トランジスタ 高速度スイッチング用 工業用 ★ 2SC2334 は，高速度スイッチング用として開発されたモールド

2sc2335

Abstract: SUS CIRCUIT
Contextual Info: SavantIC Semiconductor Product Specification 2SC2335 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Collector-emitter sustaining voltage VCEO sus =400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0µs(Max.)@IC=3.0A

2SA1010

Abstract: 2SA10-10 2SC2334 HIGH VOLTAGE POWER PNP TRANSISTORS transistors pnp 100v 10A
Contextual Info: SavantIC Semiconductor Product Specification 2SA1010 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2334 ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Switching regulators ·DC/DC converters

2SA1008

Abstract: 2SC2331
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1008 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.6V(Max.)@ IC= -1A ·Fast Switching Speed ·Complement to Type 2SC2331 APPLICATIONS ·Designed for use as a driver in devices such as switching

transistor 2sc2344

Abstract: 2sa1011 2SC2344
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1011 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Typ.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -160V(Min.) ·Complement to Type 2SC2344

2SA1010

Abstract: 5v 10a dc driver ic 2SC2334 2SA10-10
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1010 DESCRIPTION •Low Collector Saturation Voltage ·Fast Switching Speed ·Complement to Type 2SC2334 APPLICATIONS ·Developed for high-voltage high-speed switching, and is

15 A PNP POWER TRANSISTOR

Abstract: 2SC2336B power transistor 2SA1006B
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1006B DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV BR CEO= -250Vdc (Min) ·Wide Area of Safe Operation ·Complement to Type 2SC2336B APPLICATIONS

Contextual Info: Transistors 2SC2377 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 2.5±0.1 1.0 (1.0) (1.5) 4.5±0.1 R 0.9 R 0.7 3.5±0.1 (1.5) • Absolute Maximum Ratings Ta = 25°C 4.1±0.2 2.0±0.2 2.4±0.2 1.0±0.1 d p lan inc ea se ed lud

2SC2373

Abstract: m0spec
Contextual Info: ÆàMOSPEC NPN SILICON POWER TRANSISTORS NPN .specifically designed for use in horizontal deflection output for BAA/ TV applications 2SC2373 FEATURES: * Low Collector-Emitter Saturation Voltage 7.5 AMPERE SILICON POWER TRANASISTORS 100 VOLTS 40 WATTS VCE satf 1-5V(Max @ Ic=5 0A,Ib=0.5A

tt 2144

Abstract: 2SC2320 2SC3358 2SD811 TOSHIBA TT 2141 2SC2381 2SD467 2SC2496A 2SC2914 2SC1947
Contextual Info: - m « Type No. & M £ Manuf. SANYO £ TOSHIBA 2SC 2117 m B NEC 2SC 2119 2SC 2120 y 2SC 2121 f 2SC 2122 2SC 2123 M S M M £ M ^ M £ M ÌE «S T MATSUSHITA 2SC2001 2SD734 2SC1947 2SC 2129 = 2SC 2130 = m m 2SC 2131 H s 2SC1001 2SC2762 2SC 2132 , = m 2SC2381

Contextual Info: 2SC2324 K Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier Outline TO-126 MOD Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit C o lle c to r to ba se v o lta g e ^C B O 60 V C o lle c to r to e m itte r v o lta g e V CEQ