VCC50V Search Results

Contextual Info: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak * * FZT855 - Very low saturation voltage Excellent hFEspecified up to 10 Amps

Z8609

Contextual Info: P r e l im in a r y P r o d u c t S p e c if ic a t io n COPY ONLY FEB 2 6 1998 Z86093 NO UPDATE ROM less CMOS 8-B it 28 MCU FEATURES RAM* Bytes Speed (MHz) • Device ROM (KB) Two Programmable 8 -Bit Counter/Timers, Each with Two 6 -Bit Programmable Prescaler

acrian RF POWER TRANSISTOR

Abstract: acrian RF POWER TRANSISTOR 300 w TRANSISTOR S250 S250-50 acrian ic S250-50-2 S250-50-3 S25-50 le200 acrian inc
Contextual Info: 0182998 ACRIAN INC 97D 01153 D -33-15 DE •dlfla'na 00 01153 7 GENERAL DESCRIPTION The S250-50 is a 50V 250 W PEP NPN silicon RF power transistor designed for 1.5 to 30 MHz linear applications. Gold metallization and difussed resistors assure optimum reliability and ruggedness.

PLSI 1016-60LJ

Abstract: lattice 1016-60LJ 1016-60LJI LSI1016 1016-60LT44 PLS11016
Contextual Info: Lattice is p L S I Semiconductor Corporation a n d p L S I 1 1 6 High-Density Programmable Logic Features • d lB R I B B E I I d l i H i l B ü l • HIGH-DENSITY PROGRAMMABLE LOGIC — High-Speed Global Interconnect — 2000 PLD Gates — 32 I/O Pins, Four Dedicated Inputs

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A ISSUE 3 -JANUARY 1995_ — FEATURES * * * * - V ceo=120V 3 A m p continuous Current 6 A m p pulse Current Very Low Saturation Voltage APPLICATIONS *

P1y transistor

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 -JANUARY 1995_ ' - ZTX1056A FEATURES * V c e o =1 6 0 V * 3 A m p C o n t in u o u s Current * 6 A m p P u lse Current * L o w Sa tu ra tio n V olta ge ABSOLUTE MAXIM UM RATINGS.

Contextual Info: CAT35C102H Preliminary CAT35C102H - High Endurance 1 MHz 2K BIT SERIAL E2PROM OPERATION DESCRIPTION FEATURES The CAT35C102H is a high endurance 2K bit Serial E2PROM memory device organized in 128 registers of 16 bits ORG pin at Vcc or 256 registers of 8 bits

S175-50

Abstract: S100-50 DDD1141 S100-50-2 S100-50-3 100WPEP Scans-00115680
Contextual Info: 0 1 8 2 9 9 8 ACRI AN PS i H l1^ ! hü? Ö INC DE • G l ß E T i ö ^P.^P. M □□□114□ T D T - J 3 - f 3 @ WS! ■ * ^3 i^i >^8^ ^11i S1 00-50 GENERAL DESCRIPTION 100 WATTS - 50 VOLTS 30 MHz The S100-50 is specifically designed for HF linear operation from a 50 volt supply, where the full

CI EEPROM 2816

Abstract: 2816 eeprom eeprom 2816 dallas date code DS1220AD DS1220AB DS1220AD 2716 EPROM DS1220Y dallas d6122
Contextual Info: DS1220AB/AD DALLAS SEMICONDUCTOR CORP 50E D • DALLAS SEMICONDUCTOR Ebl413D 000Mb34 b I DS1220AB/AD 16K Nonvolatile SRAM 7^ FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or

D1230

Abstract: 2SB913 2SD1230 1034B
Contextual Info: Ordering number: EN 1034B 2SB913/2SD1230 PNP/NPN Planar Silicon Darlington Transistors Driver Applications Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Features - High DC current gain. • High current capacity and wide ASO.

FCT2000

Abstract: C1213 5A2R
Contextual Info: QUALITY SEMICONDUCTOR Q S 54/74F C T 646 Q S54/74FCTG 48 High Speed CMOS 8-bit Bus Interface Register Transceivers Q INC, qI m /mfctm JS FEATURES/BENEFITS • Pin and function compatible to the 74F646/8 74FCT646/8 and 74FCT646T/8T • CMOS power levels: <7.5 mW static

KSD569

Abstract: KSB601 KSB708 KSD560 KSD568 C 3311 transistor
Contextual Info: ^SAMSUNG S E M I C O N D U C T O R m e I NC d I oaoTboa NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD560 T ~ LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • Complement to KSB601 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol

Contextual Info: « Y I I I I VI A I I U HY29F400T/B Series I I 11 f t I 4 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase Ready//Busy - Minimizes system-level power requirements - RY//BY ourput pin for detection of programming or erase cycle completion

2SD2440

Contextual Info: TOSHIBA 2SD2440 TO SHIBA TRANSISTOR SWITCHING APPLICATION • • • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2440 High Breakdown Voltage VCBO = 100 V MIN. Ve b O = 18 V (MIN.) Low Saturation Voltage VCE(sat) = 1-2 V (MAX.) (IC = 5A, IB = 1A) High Speed : tf = 1 f a (TYP.) (Ic = 5 A, IB = ±0.5 A)