NY11725 Search Results

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 10 4 8 A ISSUE 3 - FEBRUARY 1995. — . FEATURES * * V cev =50V Very Low Saturation Voltages * High Gain * 20 A m p s pulse current

BCW70R

Abstract: BCW69R BCW69 BCW70 720 sot23 DSA003673
Contextual Info: SOT23 PNP PLANAR SMALL SIGNAL TRANSISTORS BCW69 BCW70 BCW69 BCW70 ISSUE 2 – FEBRUARY 1995 PARTMARKING DETAILS – DIM E C B Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085

TF-450

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 10 4 7 A ISSUE 3 -JANUARY 1995_ _ FEATURES * Very Low Saturation Voltage * High Gain * 4 Amp Continuous Current APPLICATIONS * DC-DC Convertors * Power Management - Supply Switching

FET SOT23 60V

Abstract: BST82
Contextual Info: BST82 SOT23 N CHANNEL ENHANCEMENT IMODE VERTICAL DMOS FET BST82 IIssue 2 - October 1997 PARTMARKING DETAIL – O2 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain Source Voltage V DS VALUE 80 UNIT V Drain Source Voltage non repetitive peak tp ≤ 2ms

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 – FEBRUARY 95 FEATURES * BCEV=150V * Very Low Saturation Voltage * High Gain * Inherently Low Noise APPLICATIONS * Emergency Lighting * Low Noise Audio 1.0 180 D=1 D.C 160 t1 140 tp 120 100 0.75

ztx1056A

Abstract: BF600 ztx1056 DSA003763
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1056A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance Derating curve

FMMD2836

Abstract: DSA003689
Contextual Info: SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON ANODE DIODE PAIR FMMD2836 FMMD2836 ISSUE 1 – FEBRUARY 1995 DIM 2 1 3 Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15

tf600

Abstract: IC4a ZTX1051A DSA003762
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1051A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu D=0.1 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 60 m te D=0.5 0.75 t en bi tp 120 Am

bf500

Abstract: ZTX1055A 161627 DSA003762
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance Derating curve

FMMD6100

Abstract: FMMD7000 PARTMARKING at 5b DSA003690
Contextual Info: SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON CATHODE DIODE PAIR FMMD6100 FMMD6100 ISSUE 2 - OCTOBER 1995 DIM 2 1 3 Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15

Contextual Info: OBSOLETE - PLEASE USE ZTX855 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1056A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A ISSUE 3 -JANUARY 1995_ — FEATURES * * * * - V ceo=120V 3 A m p continuous Current 6 A m p pulse Current Very Low Saturation Voltage APPLICATIONS *

98-7

Contextual Info: Zetex pic Fields New Road, Chadderton, Oldham, OL9 8NP, United Kingdom Telephone:061-627 5105 Sales 061-627 4963 (General Enquiries) Facsimile: 061-627 5467 Telex: 668038 A Telemetrix PLC Group Company Zetex GmbH Drosselweg 30, 8000 München 82, Germany

BAV70

Abstract: BAV99
Contextual Info: BAV70 SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE PAIR COMMON CATHODE BAV70 ISSUE 2 – JANUARY 1995 PIN CONFIGURATION  2 1 PARTMARKING DETAIL BAV70 – A4 3 ! SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Continuous Reverse Voltage VR 70

FMMD2838

Abstract: DSA003690
Contextual Info: SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON CATHODE DIODE PAIR FLLD2838 FMMD2838 ISSUE 2 – NOVEMBER 1996 DIM 2 1 3 Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085

FMMD2835

Abstract: A9 SOT23 diode A9 diode A9 sot23 DSA003689
Contextual Info: SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON ANODE DIODE PAIR FMMD2835 FMMD2835 ISSUE 1 – FEBRUARY 1995 DIM 2 1 3 Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15

BCW89R

Abstract: BCW89 DSA003674
Contextual Info: SOT23 PNP PLANAR SMALL SIGNAL TRANSISTORS BCW89 ISSUE 2 – FEBRUARY 1995 PARTMARKING DETAILS – DIM E C B Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059

FET SOT23 60V

Contextual Info: Not Recommended for New Design Please Use ZVN3310F BST82 SOT23 N CHANNEL ENHANCEMENT IMODE VERTICAL DMOS FET BST82 IIssue 2 - October 1997 PARTMARKING DETAIL – O2 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain Source Voltage V DS VALUE 80 UNIT

Contextual Info: PART OBSOLETE - USE ZVN3310F BST82 SOT23 N CHANNEL ENHANCEMENT IMODE VERTICAL DMOS FET BST82 IIssue 2 - October 1997 PARTMARKING DETAIL – O2 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain Source Voltage V DS VALUE 80 UNIT V Drain Source Voltage

MPS5179

Abstract: MPS5179 small signal transistor 8-NP S00406
Contextual Info: NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR MPS5179 MPS5179 ISSUE 2 – FEB 1994 FEATURES * HIGH fT=900MHz MIN * MAX CAPACITANCE=1pF * LOW NOISE 5dB APPLICATIONS * CORDLESS TELEPHONES * KEYLESS ENTRY SYSTEMS * WIDEBAND INSTRUMENTATION AMPLIFIERS * TELEMETRY

bas16 a6

Abstract: BAS16 SOT23 zetex BAS16 bas16a6 4963
Contextual Info: SOT23 PNP SILICON HIGH SPEED SWITCHING DIODE BAS16 BAS16 ISSUE 3 – FEBRUARY 1996 PIN CONFIGURATION DIM E C B Millimeters Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059

ZTX1053A

Abstract: BF 245 A spice ztx1053a datasheet NC176 BF600 bf 245 spice 1053A ZTX1053 zetex transistor to92 21E12
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1053A t1 140 D=t1 tp D=0.2 D=0.1 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu 60 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 m te D=0.5 0.75 t en bi tp 120 Am

FMMD2837

Abstract: 5467 diode DIODE a5 DSA003690
Contextual Info: SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON CATHODE DIODE PAIR FMMD2837 FMMD2837 ISSUE 1 – FEBRUARY 1995 DIM 2 1 3 Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085

ZBD949

Abstract: LT1123
Contextual Info: ZBD949 Single Pulse Test Tamb=25 C Single Pulse Test Tcase=25 C 100 10 1 D.C. D.C. 10ms 10ms 1ms 1ms 0.1 100 1 10 0.1 100 0.1 1 10 100 VCE V VCE (V) Safe Operating Area Safe Operating Area 90 2.0 80 D=1(D.C.) t1 70 1.5 60 50 1.0 D=t1 tp t p D=0.5 40 30 0.5