161627 Search Results

Switched Mode Power Supply

Abstract: smps transformer design zetex smps TRAC AC to DC smps circuit diagram switched mode power smps
Contextual Info: TRAC Application Note 2 Issue 1 November 1996 Switched Mode Power Supply Adam Knight The Introduction timing parameters, i.e. the switching period and the width of the The power supply industry has seen a output pulse can readily be changed gradual movement away from the use

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 10 4 8 A ISSUE 3 - FEBRUARY 1995. — . FEATURES * * V cev =50V Very Low Saturation Voltages * High Gain * 20 A m p s pulse current

ZHB6790

Abstract: diagram of bf 494 transistor transistor bf 494 "dual TRANSISTORs" pnp npn transistor Ic 1A datasheet NPN TP4030 DSA003728 SM-8 BIPOLAR TRANSISTOR npn-pnp dual
Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6790

BCW70R

Abstract: BCW69R BCW69 BCW70 720 sot23 DSA003673
Contextual Info: SOT23 PNP PLANAR SMALL SIGNAL TRANSISTORS BCW69 BCW70 BCW69 BCW70 ISSUE 2 – FEBRUARY 1995 PARTMARKING DETAILS – DIM E C B Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085

160455

Abstract: e 156176 163434 162585 Weidmuller BLZ 5.08 158134 163444 168802 ALNUP+161609 161573
Contextual Info: Produktinformation Leiterplattenverbinder LeiterplattenSteckverbinder-Systeme Inhalt Allgemeine Informationen Gesamtübersicht 3 Der schnelle Weg zum optimalen Leiterplatten-Steckverbinder 4 Leiterplatten-Steckverbinder – praxisgerecht, zukunftssicher, kompatibel

analog devices die list

Abstract: 54AC245 74ACT04 LM108 LM137K SCAN18373T SCAN18374T SCANPSC100F SCANPSC110F
Contextual Info: N VOLUME NO. 2 1999 BARE DIE USE IS GROWING RAPIDLY CONTENTS he rapid demand for smaller and PAGE 1 Bare Die Use is Growing BARE DIE MEET smaller consumer products is Rapidly pushing designers and manufacQUALITY, RELIABILITY, Page 2 Boundary Scan Assists turers to reassess their selection of comAND PERFORMANCE

1616140000

Abstract: 161016 1616160000 1616050000
Contextual Info: Omnimate Range - 3.50 mm Pitch Pin headers SL 3.5/180F Pin headers SL 3.5/180G Pin headers SL 3.5/180 \ 0 1.3 Technical data VDE UL CSA Technical data VDE UL CSA Technical data Rated voltage V _ 125* 300 300 Rated voltage (V) 125- 300 300 Rated voltage (V)

TF-450

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 10 4 7 A ISSUE 3 -JANUARY 1995_ _ FEATURES * Very Low Saturation Voltage * High Gain * 4 Amp Continuous Current APPLICATIONS * DC-DC Convertors * Power Management - Supply Switching

Contextual Info: SOT223 NPN SILICON PLANAR M EDIU M POWER HIGH GAIN TRANSISTOR ISS U E 1 - SEPT EM BER 1997 _ FZT1053A _ _ FEATURES VCE0= 75 V 4.5 Am p Continuous Current 10 Am p Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance;

FET SOT23 60V

Abstract: BST82
Contextual Info: BST82 SOT23 N CHANNEL ENHANCEMENT IMODE VERTICAL DMOS FET BST82 IIssue 2 - October 1997 PARTMARKING DETAIL – O2 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain Source Voltage V DS VALUE 80 UNIT V Drain Source Voltage non repetitive peak tp ≤ 2ms

12AWG

Abstract: 1616050000 1616160000 281-1943-ND 2811605 281-1235-ND 281-1302-ND
Contextual Info: Terminal Blocks Fig. 16 LPP 5.08/90 Ø 1.3 13.4 Cont. Fig. 17 LP 5.08/135 Ø 1.3 17.51 3.14 (n-1) 5.08 x 5.08 2.54 17 21.84 16.81 2.54 Specifications: • Screw Clamp • UL: 300V @ 15A • 12AWG • Pin Length: 4.5mm Specifications: • Screw Clamp • UL: 300V @ 15A • 12AWG • Pin Length: 4.5mm

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

1804700

Contextual Info: Omnimate Range - Pitch 3.50 mm This versatility brings substantial benefits: You design your printed circuit board with a 3.5/5/7mm pitch component and are able to combine different field connections with it – as it is required by end customers and market.

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4306AV ISSUE 1 – FEBRUARY 95 FEATURES * 60 Volt VDS * RDS on = 0.33Ω * Repetitive Avalanche Rating D G APPLICATIONS * Solenoids / relay drivers for automotive * Stepper Motor Drivers * DC-DC convertors S

FZT1053A

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT1053A ISSUE 1 - SEPTEMBER 1997 FEATURES * * * * * * C VCEO = 75V 4.5 Amp Continuous Current 10 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE sat = 78mΩ at 4.5A

ztx1056A

Abstract: BF600 ztx1056 DSA003763
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1056A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance Derating curve

FMMT718

Abstract: FMMT617 FMMT618 FMMT619 FMMT624 FMMT717 FMMT720 FMMT722 FMMT723 ZETEX FMMT-717
Contextual Info: SuperSOT SOT23 PNP SILICON POWER SWITCHING TRANSISTORS DIM A B C D F G K L N Millimeters Min Max 2.67 3.05 1.20 1.40 – 1.10 0.37 0.53 0.085 0.15 NOM 1.9 0.01 0.10 2.10 2.50 NOM 0.95 Inches Min Max 0.105 0.120 0.047 0.055 – 0.043 0.0145 0.021 0.0033 0.0059

h6718

Abstract: bf 494 transistor ZHB6718 ZHB6718 TYPICAL APPLICATION 12 mje t 5029 DSA003727 SM-8 BIPOLAR TRANSISTOR
Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6718

tf600

Abstract: IC4a ZTX1051A DSA003762
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1051A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu D=0.1 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 60 m te D=0.5 0.75 t en bi tp 120 Am

bf500

Abstract: ZTX1055A 161627 DSA003762
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance Derating curve

s2l 78

Abstract: 281-1406-ND 281-1408-ND 281-1448-ND 12AWG 281-1414-ND Weidmuller BLZ 5.08 281-1943-ND 281-1181-ND 281-1849-ND
Contextual Info: p114-118 Weidmuller Term. Blk 3/6/06 10:01 AM Page 1 Terminal Blocks 6.2 4.4 8.3 Ø 1.3 16.75 Specifications: • Screw Clamp • UL: 300V @ 10A • 14AWG • Pin Length: 4.5mm Specifications: • Screw Clamp • UL: 300V @ 10A • 14AWG • Pin Length: 4.5mm

eosin

Contextual Info: TRAC Application Note 3 Issue 1 November 1996 Frequency Doubler Adam Knight Introduction Frequency doubling is used in a number the required simulated response. This of application areas. These include the design can then be realised using the conditioning

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT1047A ISSUE 1 - AUGUST 1997_ _ _ _ FEATURES * VCE0= 10V * 5 A m p Continuous Current * 20 A m p Pulse Current * Low Saturation Voltage * High Gain

LM358 RF receiver module

Abstract: DS26C31T light sensor lm324 and lm339 in circuit functions light sensor in lm324 and lm339 LM324 temperature controller LM386-1 LM723 LMX2336 detonators functions light sensor in lm324
Contextual Info: N VOLUME NO. 5 2000 THE PROLIFERATION OF DIE PRODUCTS COMMUNICATION SYSTEMS he trend in the electronics industry is toward smaller and lighter with higher performance. Fueling this trend is continuing silicon integration as well as advanced packaging technologies. The ultimate "packaging" technology in terms of supporting